transistors-products
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X-Band, GaN/SiC Power Transistor: IGT1112M90
5/14/2019
Integra Technologies offers the IGT1112M90 X-band, GaN/SiC power transistor designed to meet the requirements of radar systems operating in the X-band. Operating in the 10.8 – 11.8 GHz frequency range with under 150µs and 10% duty cycle pulse conditions, the device supplies a minimum of 90 W of peak output power, with an associated 9 dB of gain and 35% efficiency.
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50 V GaN Transistors
12/13/2016
Qorvo offers a family of GaN transistors designed to serve a wide range of defense and commercial applications, including types of radar, communications, avionics, and test instrumentation. These transistors have an operating voltage of 50 V, are CW and pulsed capable, unmatched, and are lead-free and ROHS compliant.
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Discrete Transistor: QPD2025D
7/20/2022
Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process.
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CW VDMOS Transistors
6/15/2007
Integra's newly released series of CW VDMOS transistors once again sets the standard for output power, gain, and efficiency. All of these push pull devices feature gold metallization for maximum reliability and are available now
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S-Band Medical Transistors
2/15/2007
Integra’s lineup of S-band silicon bipolar power transistors with the world’s highest power output, are unmatched by any other vendor. These transistors are designed to address the most stringent requirements for medical, civilian and military radar, including ground, naval, and airborne mechanically and electronically scanned antennas
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2GHz RF Transistors
3/24/1999
A family of 2-GHz high-power RF transistors features the PTF10120, 10043, 10035, and 10112 models
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30 W, DC - 6.0 GHz, GaN HEMT: CGHV27030S
6/16/2017
Wolfspeed, A Cree Company, offers the new CGHV27030S unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) with operation in the 700 - 960 MHz, 1200 - 1400 MHz, 1800 - 2200 MHz, and 3300 - 3700 MHz frequency ranges at both 50 V and 28 V. With features like high efficiency, high gain, and wide bandwidth capabilities, this transistor is ideal for telecommunications applications, as well as tactical communications applications from 20 - 2500 MHz.
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RF Transistor: 2729GN-500V
5/7/2013
Microsemi’s 2729GN-500V RF transistor is based on GaN on SiC technologies and targeted at high-power air traffic control airport surveillance radar applications. The 2729GN-500V delivers unparalleled performance of 500W of peak power with 12 dB of power gain and 53% drain efficiency over band 2.7 to 2.9 GHz band.
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HF12-125 Bipolar Power Transistor
1/30/2009
The HF12-125 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. The HF12-series products utilize the unique Spectrum Devices’ Bipolar process which offers a 67% improvement in collector-base breakdown voltage, enhancing reliability while maintaining RF performance.
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GaN on SiC Power Transistors
7/29/2015
Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.