transistors-products

61. HF50-Series Bipolar Power Transistors 1/20/2009
    Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 50 volt products offer drop-in equivalence to other manufacturers.
62. RF Power Transistors for Aerospace and Defense 1/31/2011
    600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz 1090 MHz range.
    Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances, designed for broadband operation (1030 MHz to 1090 MHz). It has easy power control, excellent ruggedness, excellent thermal stability, high efficiency, high flexibility with respect to pulse formats, Integrated ESD protection and Internally matched for ease of use.
63. Synthesized LO Loop Test Translators (LTTs): ALR Series 10/11/2017

    The new ALR series of dual channel loop test translators (LTTs) features simultaneous operation within the Ka and Ku bands, and has the ability to introduce different transfer characteristics in each channel. These instruments are used in an array of testing applications for frequency conversions of uplink (Tx) frequencies to either downlink (Rx) frequencies or to L-Band, and for L-Band to downlink (Rx).

64. GaN MMIC Amplifiers/Transistors 10/31/2012

    Northrop Grumman’s first three entries in their GaN MMIC Amplifiers have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market. 

65. GaN Technology For Wireless Base Stations 10/20/2017

    The new MAGb series from MACOM is a family of the industry’s first commercial base station-optimized GaN transistors designed to achieve excellent efficiency, bandwidth, and power gain. It is also the broadest portfolio available of RF to light solutions for wireless network infrastructures.

66. Avionics Pulsed Power RF Transistors 5/10/2007
    Avionics Pulsed Power RF Transistors, M/A-COM MAPRST1030-1KS, a new 1,000 W peak, class C bipolar transistor designed for 1030 MHz pulsed avionics applications
67. 900-MHz Transistors 3/16/1999
    A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
68. 5200 - 5900 MHz GaN MMIC For Radar Power Amplifiers: CMPA5259050F 12/3/2018

    The CMPA5259050F gallium nitride (GaN) high electron mobility transistor (HEMT) from Cree is designed to provide high efficiency, high gain, and wide bandwidth capabilities in applications operating in the 5.2 – 5.9 GHz frequency range. Supplied in a ceramic/metal flange package, the amplifier also operates at 50 Watts and 28 volts.

69. 1.2 - 1.4 GHz, 375 Watt, 65 Volt , GaN On SiC RF Transistor: QPD1425L 7/13/2023

    The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency.

70. 3400 – 3600 MHz Thermally-Enhanced High-Power RF GaN On SiC HEMT: GTRA364002FC 9/17/2018

    Wolfspeed’s new GTRA364002FC is a thermally-enhanced high-power RF GaN on SiC HEMT designed for multi-standard cellular power amplifier and other wireless infrastructure applications in the 3400 – 3600 MHz frequency range. The device features an output power of 400 W, 13 dB gain, and operation at 48 V.