1200W GaN L-Band Avionics Transistor: Highest Power In The Industry
Integra Technologies introduces IGN1011L1200 on GaN/SiC, exhibiting 17dB gain and 75% efficiency at 1030-1090 MHz, 50V, for IFF at ELM Mode S pulse conditions. Devices are 100% tested.
Model PTF 10100 is a 900-MHz transistor optimized for amplification of cellular base station signals
30 W, DC - 6.0 GHz, GaN HEMT: CGHV27030S
Wolfspeed, A Cree Company, offers the new CGHV27030S unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) with operation in the 700 - 960 MHz, 1200 - 1400 MHz, 1800 - 2200 MHz, and 3300 - 3700 MHz frequency ranges at both 50 V and 28 V. With features like high efficiency, high gain, and wide bandwidth capabilities, this transistor is ideal for telecommunications applications, as well as tactical communications applications from 20 - 2500 MHz.
0405-500L: UHF Transistor For Long Pulsed Radar Applications
The 0405-500L is an internally-matched, common emitter transistor
capable of providing 500 Watts of pulsed RF output power in a push-pull
configuration at one thousand and one hundred microsecond pulse width
twenty–six percent duty factor across the frequency band 400 to 450 MHz
C-Band GaN 4.2 kW Pulsed Solid State Power Amplifier Module: VSC3645
CPI’s Beverly Microwave Division presents the VSC3645 GaN 4.2 kW pulsed solid state power amplifier module operating in the C-band (5.2 – 5.9 GHz). This high efficiency, high power, compact amplifier is highly efficient, easy to maintain, and is designed to easily create high power C-band radar transmitters.
GaN Technology For Wireless Base Stations
The new MAGb series from MACOM is a family of the industry’s first commercial base station-optimized GaN transistors designed to achieve excellent efficiency, bandwidth, and power gain. It is also the broadest portfolio available of RF to light solutions for wireless network infrastructures.
TAN350 Avionics Transistor
APT-RF’s Avionics Transistor, 350W, Class C, common base power transistor is designed for broadband TACAN systems covering 960-1215 MHz with 10uS, 10% pulsing at Vcc = 50V
0405-1000M - 400 To 450 MHz UHF Power Transistor
The 0405-1000M transistor from Microsemi Power Products Group is designed for UHF frequency, 400 to 450 MHz. This high performance, common emitter, class C, output stage offers unparalleled performance of 1000W of peak power, 70% collector efficiency at 450 MHz, and is in a hermetically sealed package for the best reliability for weather radar and over the horizon radar applications...
A family of low-noise pseudomorphic high-electron mobility transistors (PHEMT) uses the company’s latest-generation gallium arsenide (GaAs) fabrication process
High-Efficiency Power Transistor: RF3932
The RF3932 High-Efficiency Power Transistor is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN)semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design.