1. GaN RF Power Transistor: T1G6003028-FS

    This GaN RF Power Transistor operates in the DC-6 GHz frequency range. It’s ideal for applications involving jammers, military and civilian radar, test instrumentation, professional and military radio communications, and wideband or narrowband amplifiers.

  2. RF Transistor
    Designed for CDMA and TDMA applications in the PCS band, model PTF10112 is an RF transistor that features gold top metal and gold bond wires
  3. C-Band GaN 4.2 kW Pulsed Solid State Power Amplifier Module: VSC3645

    CPI’s Beverly Microwave Division presents the VSC3645 GaN 4.2 kW pulsed solid state power amplifier module operating in the C-band (5.2 – 5.9 GHz). This high efficiency, high power, compact amplifier is highly efficient, easy to maintain, and is designed to easily create high power C-band radar transmitters.

  4. CW VDMOS Transistors
    Integra's newly released series of CW VDMOS transistors once again sets the standard for output power, gain, and efficiency. All of these push pull devices feature gold metallization for maximum reliability and are available now
  5. VRF152 -- RF Power Vertical MOSFET Transistor
    The new VRF152 from Microsemi is a gold-metalized silicon n-channel RF power transistor designed for broadband commercial and hi-rel applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulations distortion. It can operate up to 175MHz at 150W with a typical gain of 13dB at very high efficiency on a 50V DC supply.
  6. High-Efficiency Power Transistor: RF3932
    The RF3932 High-Efficiency Power Transistor is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN)semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design.
  7. DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010

    The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

  8. 50-Ohm GaN RF Input-Matched Transistor: QPD1000

    Qorvo offers a wideband, 28 V, 50-Ohm input-matched RF transistor that is ideal for commercial and defense communications applications. This device has an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

  9. 500 W GaN/SiC Long-Pulse L-Band Transistor: IGN1214L500B

    Integra Technologies introduces the IGN1214L500B long-pulse transistor with GaN on SiC HEMT technology, operating at 380 W for applications from 1.2 – 1.4 GHz. The transistor exhibits 15.5 dB typical gain, and 65% efficiency, at 2 milliseconds and 20% pulse conditions. It is specified for use under Class AB operation.

  10. Broadband General Purpose GaN Transistor: IGN0160UM10

    Integra Technologies offers the IGN0160UM10 broadband GaN transistor for use in general purpose applications. The transistor operates throughout the 0.100 through 6.00 GHz frequency range, and is designed to utilize GaN on SiC HEMT technology.