Power Transistors And Modules For S-Band Radar
Microsemi’s new S-Band power modules provide a complete design solution, combining two Microsemi transistors in hermetically sealed packages, with input/output circuitry matched to 50 ohm. Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.
RF Transistor: 2729GN-500V
Microsemi’s 2729GN-500V RF transistor is based on GaN on SiC technologies and targeted at high-power air traffic control airport surveillance radar applications. The 2729GN-500V delivers unparalleled performance of 500W of peak power with 12 dB of power gain and 53% drain efficiency over band 2.7 to 2.9 GHz band.
GaN RF Power Transistor: T1G6003028-FS
This GaN RF Power Transistor operates in the DC-6 GHz frequency range. It’s ideal for applications involving jammers, military and civilian radar, test instrumentation, professional and military radio communications, and wideband or narrowband amplifiers.
GaN MMIC Amplifiers/Transistors
Northrop Grumman’s first three entries in their GaN MMIC Amplifiers have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market.
Integra’s lineup of silicon bipolar and MOSFET power transistors for avionics applications boasts performance unavailable from any competing vendor. These products are designed to address the most stringent requirements for TCAS, MODE-S, MODE S-ELM, IFF, ADS-B, UAT, JTIDS, DME, and TACAN
50 V GaN Transistors
Qorvo offers a family of GaN transistors designed to serve a wide range of defense and commercial applications, including types of radar, communications, avionics, and test instrumentation. These transistors have an operating voltage of 50 V, are CW and pulsed capable, unmatched, and are lead-free and ROHS compliant.
GaN S-Band 50Ω Transistor: IGT2731L120
Integra Technologies introduces IGT2731L120 with GaN on SiC HEMT technology, exhibiting 13 dB typical gain, and 50% drain efficiency. This device is 100% high power RF tested in a 50Ω RF test fixture.
GaN Technology For Wireless Base Stations
The new MAGb series from MACOM is a family of the industry’s first commercial base station-optimized GaN transistors designed to achieve excellent efficiency, bandwidth, and power gain. It is also the broadest portfolio available of RF to light solutions for wireless network infrastructures.
Silicon Carbide RF Power Transistors
Microsemi Corporation recently announced its first two RF power transistors utilizing silicon carbide technology for high power VHF and UHF band pulsed radar applications. Designated 0150SC-1250M and 0405SC-1000M, these RF Power transistors utilize state-of-the-art silicon carbide technology designed for VHF - 150 to 160 MHz, and UHF - 406 to 450 MHz respectively
ARF477FL -- RF Power MOSFET Transistors
The new ARF477FL is a 500V (BVdss) push-pull matched pair transistor product providing up to100MHz operation in the ISM Band for industrial, scientific and medical applications including semiconductor capital equipment and MRI systems...