380 W, 1210-1400 MHz GaN/SiC Transistor: IGN1214M380C

Source: Integra Technologies, Inc.

380 W, 1210-1400 MHz GaN/SiC Transistor: IGN1214M380C

Integra Technologies introduces the IGN1214M380C GaN/SiC transistor, exhibiting 20 dB gain, 54% efficiency at 150 us-10% pulse conditions, and operation in the 1210-1400 MHz frequency range. These devices are 100% tested for large signal parameters.

The transistor utilizes GaN on SiC HEMT technology and comes with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid, and is used for L-band radar applications.

Additional features include:

  • POUT-PK = 380W @ 150us/10%/50V
  • Power Gain: 19.5 dB (max)
  • Package Size: W = 0.800″ (20.32 mm), L = 0.400″ (10.16 mm)
  • 100% high power RF tested in broadband RF test fixture

For more specifications on the IGN1214M380C transistor, download the datasheet.