Electrostatic discharge testing is utilized worldwide by electronics manufacturers to determine the ESD susceptibility of their devices. It is extremely difficult to estimate the exact cost of ESD loss annually, but it can safely be stated that ESD requires the development and testing of many hardware prototypes and contributes to a high number of warranty claims and loss of consumer confidence if failure occurs in the hands of the customer. Given the high cost in time and materials associated with ESD hardware testing, the ability to simulate the ESD testing process in XFdtd is extremely valuable, allowing engineers to pinpoint locations susceptible to ESD damage and optimize ESD mitigation during the concept and design stage of product development.

The series of GORE^® VNA microwave/RF test assemblies from W.L. Gore are designed to provide the most precise VNA measurements in laboratory conditions, setting the standard for vector network analyzers (VNAs) through 70 GHz. These test assemblies deliver the highest accuracy and greatest time intervals between recalibrations for many applications, including those with vector network analyzers, critical measurements, and laboratory testing.

The dB-9004 is a custom-mounted Integrated Antenna Digital Control Unit (IADCU). It operates in the C, X and Ku-band frequency range and provides highly accurate RF output (FM, AM and pulse-shape modulated)

Radar simulation systems (i.e., RF sources and/or receivers) must perform to an exacting minimum standard if they are to accurately prove the field worthiness of EW systems.

The dB-9003 and dB-9005 from dB Control are custom-mounted Integrated Stabilized RF Sources (ISRFS) designed to operate in the I and Ka-band frequency range. Both products feature high accuracy and a wide temperature operating range. They can be controlled and set up with a digital port. The units are packaged in a custom configuration with conduction cooling.

The dB-9002 from dB Control is a custom-mounted Dual Instantaneous Frequency Measurement (DIFM) unit designed to operate in the C, X, and Ku-band frequency range and provide highly accurate measurements at 100 ns to CW pulse width measurements.

Qorvo offers the 1800 W, 65 V, 1.0 – 1.1 GHz QPD1025L as the highest GaN transistor on the market. This discrete GaN on SiC HEMT has a package that features input pre-match resulting in ease of external board match and saved board space.