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Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.
Apollo MxFE is a new wideband mixed-signal front end platform offering instantaneous bandwidths as high as 10 GHz per channel while directly sampling and synthesizing frequencies up to 18 GHz (Ku Band).
Discover the expanded DSM series, featuring a 60V/18A option, which provides engineers with greater design flexibility. The DSM series is designed for fast, safe integration into new or existing systems.
The ADL8104 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 0.4 GHz to 7.5 GHz. The ADL8104 is housed in an RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP.
The ADM-9027CH is a wideband distributed low noise amplifier capable of providing 16 dB gain and +25 dBm OIP3 from 2 to 20 GHz and a low 2.5 dB typical noise figure from 7 to 18 GHz.
The HMC819x series’ RF and LO bandwidth of 2.5 to 42 GHz along with wide IF bandwidth enable military or test and measurement applications to simplify design implementation while still maintaining superb RF performance.