Laminates

The CMM1331-KU is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transit subsystems designed for Ku-Band VSAT applications.

The On-Line Co-Design package is a service that allows RF and microwave circuit designers to design over the Internet

The UJ4C075060L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Designed for use in GSM900 and DCS1800 networks, the HP E6382A GSM test set offers frequency coverage ranges of 0.4 MHz to 1 GHz and 1.7 to 2 GHz

CPI EDB presents the VSS3607 GaN solid state power amplifier (SSPAs) operating in the S-band (2.7 – 2.9 GHz). These high efficiency, high power, compact amplifiers are easy to maintain, and are designed for use in air surveillance radar applications.

This temperature compensated crystal oscillator (TCXO) operates in the 10-52 MHz frequency range. It features an operating voltage of +1.8Vdc ~ +2.5Vdc, an operating temperature of -40°C to +85°C, RoHS/Green compliance, a clipped Sine Wave output, an optional voltage control for frequency tuning (VCTCXO) and more.

The AMP10145 is a solid-state, high-power amplifier with a Class AB GaN design, delivering reliable performance across a 2.0-18.0 GHz range.

The dB-4127 is a microwave power module (MPM) operating in the frequency range of 6 to 18 GHz. This MPM is a power amplifier that provides 200 Watts pulsed/CW RF output power. The RF signal path consists of a solid state amplifier and a vacuum power booster.