Laminates

PRODUCTS AND SERVICES

The MM1-2567LS is a passive GaAs double-balanced MMIC mixer suitable for both up and down-conversion applications featuring excellent conversion loss, isolation, and a small form factor.

The gMOT device is a compact, portable grating magneto-optical trap capable of trapping 6 million alkali-metal atoms with temperatures below 10 microkelvin demonstrated.

The NW-RF-GPS-FE is a satellite terminal RF front end module designed to provide 20 Watts of RF power to boost the performance of data links in a number of applications including GPS, RF telemetry, unmanned systems and vehicles, satellite terminals, and software defined radios. This high-performance RF front end is a powerful combination of the NuPower 13G05A RF power amplifier, low noise figure LNAs, a high isolation diplexer between the transmit and receive paths, and band-reject filters.

The TGL2209 and TGL2209-SM are Qorvo’s new X-band GaAs VPIN limiters designed to protect sensitive receive channel components against high power incident signals. These limiters do not require DC bias, and are able to achieve low insertion loss in a small form factor, allowing for simple system integration with minimal impact on performance.

The array provides four RCR T-Filters with a dual common ground

The HMC774ALC3B is a general-purpose, double balanced mixer in a leadless, RoHS compliant, surface-mount package that can be used as an upconverter or downconverter between 7 GHz and 34 GHz. This mixer requires no external components or matching circuitry. The HMC774ALC3B provides excellent LO to RF and LO to IF isolation due to optimized balun structures.

Microwave Systems offers the MS010620 multi-octave, high-power GaN amplifier designed to operate from 1 to 6 GHz. It is ideally suited for use in communications systems, radar systems, test instrumentation, broadband RF telemetry, point to point radio, and fiber optics applications.

The QPD0012 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 2.5 to 2.7 GHz. The device is a single-stage power amplifier transistor for Doherty application.