Corry Micronics’ line of high power RF amplifiers feature up to 40% efficiency, an extended temperature range of -20oC to 55oC for MIL-STD applications, and status monitoring signals that provide diagnostic information.
This is a class AB, GaN amplifier module with high linear transmit power with superior EVM performance and greater than 40% efficiency. Its 30 MHz to 3000 MHz frequency range makes it ideal for a wide variety of applications.
MtronPTI recently released a line of broadband, solid-state, power amplifiers covering the 1 to 6 GHz range with up to 100 Watts power. Each model in the series is well-suited for broadband jamming, LTE laboratory testing, and public safety and military communication applications. They're built with GaN technology, and their mechanical designs ensure high reliability under rugged operating conditions.
Berex offers the BFM4120 compact, multi-function Front-End RFIC (Radio Frequency Integrated Circuit) designed for 802.15.4 ZigBee™/ Thread, Bluetooth® Smart, and ISM wireless protocol systems in the 2.4 GHz band. The device combines a transmit power amplifier, receive low noise amplifier, a single-pole double-throw transmit/receive switch.
Empower RF Systems offers the SKU 2215 solid state broadband high power amplifier designed for multi-octave bandwidth high power CW, modulated and pulse applications. The 1900 - 6000 MHz, 200 W amplifier employs advanced broadband RF matching networks and combining techniques, EMI/RFI filters, and qualified components for exceptional performance, long-term reliability, and high efficiency in operation.
Analog Devices offers the new HMC994APM5E GaAs pHEMT MMIC distributed wideband power amplifier that is ideal for test instrumentation, military, space, and fiber optics applications. The amplifier operates within the DC to 28 GHz frequency range, and provides 15 dB of gain, +29 dBm of saturated output power, and 25% PAE from a +10V supply.
This high power amplifier module covers the 2500 to 6000 MHz and is ideal for broadband jamming and high power linear applications in the S/C bands. It features built-in control and monitoring with protection functions, high power GaN on SiC transistors, and much more.