Gain Block Amplifiers

Celeritek’s CGB7003-BD is a Darlington Configured, high dynamic range, utility gain block amplifier MMIC chip. Designed for applications operating between 0.1 and 6.0 GHz, Celeritek’s broadband, cascadable, gain block amplifier is ddeal solutions for transmit, receive and IF applications.

Celeritek’s CGB7014-SC is a Darlington Configured, high dynamic range, utility gain block amplifier MMIC with 18.5dB of gain at 6 GHz.

Avago Technologies’ DC - 6000 MHz InGap HBT Gain Block: AVT-50663 is an economical, easy-to-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair configuration housed in a 6-lead (SOT-363) surface mount plastic package.

Sirenza Microdevices’ SGB-4333 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network

The CGB7001-SC (-BD) is a Darlington Configured, high dynamic range, utility gain block amplifier. Designed for applications operating within the 0.1 GHz to 6.0 GHz frequency range, Celeritek’s broadband, cascadable, gain block amplifiers are ideal solutions for transmit, receive and IF applications.

Celeritek’s CGB7289-SC is a single stage, high power, high dynamic range, utility gain block amplifier. It is designed as a broad band amplifier from 0.1 to 2.5 GHz

RFMD’s RFDS0045 is a Digital Controlled Variable Gain Amplifier operating in the 10MHZ to 850MHZ frequency range. It features SPI serial control programming, a max gain of 44dB at 150MHz, a gain control range of 31.5dB (0.5dB Step Size), high OIP3 of 42dBm at 150MHz, high P1dB = 20dBm at 150MHz, a single +5V supply, a small 32-Pin, 5.2mm x 5.2mm MCM, a footprint compatible with 5mm x 5mm, 32-Pin QFN, and power-up programming. This amplifier is ideal for Transceiver IF DVA, Cellular, PCS, GSM, UMTS, Wireless Data, and Satellite Terminal applications.

Avago Technologies’ 2-6 GHz High Linearity Gain Block: MGA-30789 is a broadband, high linearity gain block MMIC amplifier achieved through the use of Avago Technologies' propietary 0.25um GaAs Enhancement-mode pHEMT process.