Transistors

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900-MHz Transistors
900-MHz Transistors
A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
RF Transistors
RF Transistors
Wideband RF transistors are optimized for amplification of DAB and DAR signals
1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025
1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025

Qorvo offers the QPD1025 discrete GaN on SiC RF transistor that is ideal for IFF transponder and avionics applications. This device features over 1800 W output power, 65 V operating voltage, and a specific frequency range of 1.0 to 1.1 GHz.

35 W, 2.0 – 6.0 GHz GaN MMIC Power Amplifier: CMPA2060035F

The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

RF Power Transistor Series
The PD5xxxx series of radio-frequency (RF) power transistors is aimed at wireless base station and mobile radio applications where high volume...
QPD1028_PDP
GaN On SiC RF Transistor: QPD1028

The QPD1028 is a 750W discrete GaN on SiC HEMT that operates from 1.2 to 1.4 GHz, providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency.

Qorvo - QPD1018
GaN RF IMFET: QPD1018

The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.7 to 3.1 GHz and a 50V supply rail.

qpd1004a
25W, 30-1200 MHz, GaN RF Input-Matched Transistor: QPD1004A

QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz.

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