Transistors

TRANSISTORS PRODUCTS & SERVICES

Avionics Pulsed Power RF Transistors Avionics Pulsed Power RF Transistors
Avionics Pulsed Power RF Transistors, M/A-COM MAPRST1030-1KS, a new 1,000 W peak, class C bipolar transistor designed for 1030 MHz pulsed avionics applications
GaN Technology For Wireless Base Stations GaN Technology For Wireless Base Stations

The new MAGb series from MACOM is a family of the industry’s first commercial base station-optimized GaN transistors designed to achieve excellent efficiency, bandwidth, and power gain. It is also the broadest portfolio available of RF to light solutions for wireless network infrastructures.

50-Ohm GaN RF Input-Matched Transistor: QPD1000 50-Ohm GaN RF Input-Matched Transistor: QPD1000

Qorvo offers a wideband, 28 V, 50-Ohm input-matched RF transistor that is ideal for commercial and defense communications applications. This device has an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

1,500 Watt RF Power Transistor For UHF Pulsed Radar 1,500 Watt RF Power Transistor For UHF Pulsed Radar
Microsemi Corporation recently introduced the new 1,500 watt RF power transistor for UHF pulsed radar applications, thus expanding its industry-leading portfolio of high power silicon carbide transistors.
900-MHz Transistors 900-MHz Transistors
A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
Power Transistors And Modules For S-Band Radar Power Transistors And Modules For S-Band Radar
Microsemi’s new S-Band power modules provide a complete design solution, combining two Microsemi transistors in hermetically sealed packages, with input/output circuitry matched to 50 ohm. Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.
ARF477FL -- RF Power MOSFET Transistors ARF477FL -- RF Power MOSFET Transistors
The new ARF477FL is a 500V (BVdss) push-pull matched pair transistor product providing up to100MHz operation in the ISM Band for industrial, scientific and medical applications including semiconductor capital equipment and MRI systems...
3400 – 3600 MHz Thermally-Enhanced High-Power RF GaN On SiC HEMT: GTRA364002FC 3400 – 3600 MHz Thermally-Enhanced High-Power RF GaN On SiC HEMT: GTRA364002FC

Wolfspeed’s new GTRA364002FC is a thermally-enhanced high-power RF GaN on SiC HEMT designed for multi-standard cellular power amplifier and other wireless infrastructure applications in the 3400 – 3600 MHz frequency range. The device features an output power of 400 W, 13 dB gain, and operation at 48 V.

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