Transistors
PRODUCTS AND SERVICES
Wolfspeed, A Cree Company, offers the new CGHV27030S unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) with operation in the 700 - 960 MHz, 1200 - 1400 MHz, 1800 - 2200 MHz, and 3300 - 3700 MHz frequency ranges at both 50 V and 28 V. With features like high efficiency, high gain, and wide bandwidth capabilities, this transistor is ideal for telecommunications applications, as well as tactical communications applications from 20 - 2500 MHz.
Integra Technologies introduces the IGN1214M380C GaN/SiC transistor, exhibiting 20 dB gain, 54% efficiency at 150 us-10% pulse conditions, and operation in the 1210-1400 MHz frequency range. These devices are 100% tested for large signal parameters.
The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.
The CMPA5259050F gallium nitride (GaN) high electron mobility transistor (HEMT) from Cree is designed to provide high efficiency, high gain, and wide bandwidth capabilities in applications operating in the 5.2 – 5.9 GHz frequency range. Supplied in a ceramic/metal flange package, the amplifier also operates at 50 Watts and 28 volts.
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances, designed for broadband operation (1030 MHz to 1090 MHz). It has easy power control, excellent ruggedness, excellent thermal stability, high efficiency, high flexibility with respect to pulse formats, Integrated ESD protection and Internally matched for ease of use.