Integra Technologies offers the IGT1112M90 X-band, GaN/SiC power transistor designed to meet the requirements of radar systems operating in the X-band. Operating in the 10.8 – 11.8 GHz frequency range with under 150µs, 10% duty cycle pulse conditions, the device supplies a minimum of 90 W of peak output power, with an associated 9 dB of gain and 35% efficiency.
Richardson RFPD’s Insulated-gate Bipolar Transistors (IGBTS) use Microsemi’s leading-edge Power MOS 8™ technology and offer a dramatic reduction of twenty percent or more, in total switching and conduction losses as compared to competitive solutions.
Get the latest RF/microwave industry news, insights, and analysis delivered to your inbox.
Join your peers