Qorvo offers a 500 W, internally matched discrete GaN on SiC HEMT operating in the 1.2 to 1.4 GHz range. This device is fully matched to 50 Ohm, can support pulsed and linear operations, and is ideal for civilian and military radar applications.
Integra Technologies introduces the IGN1214L500B long-pulse transistor with GaN on SiC HEMT technology, operating at 380 W for applications from 1.2 – 1.4 GHz. The transistor exhibits 15.5 dB typical gain, and 65% efficiency, at 2 milliseconds and 20% pulse conditions. It is specified for use under Class AB operation.
Richardson RFPD’s Insulated-gate Bipolar Transistors (IGBTS) use Microsemi’s leading-edge Power MOS 8™ technology and offer a dramatic reduction of twenty percent or more, in total switching and conduction losses as compared to competitive solutions.
Integra Technologies introduces IGN1011L1200 on GaN/SiC, exhibiting 17dB gain and 75% efficiency at 1030-1090 MHz, 50V, for IFF at ELM Mode S pulse conditions. Devices are 100% tested.
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