Transistors

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Qorvo - QPD1025L
GaN RF Input-Matched Transistor: QPD1025L

The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space.

1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025
1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025

Qorvo offers the QPD1025 discrete GaN on SiC RF transistor that is ideal for IFF transponder and avionics applications. This device features over 1800 W output power, 65 V operating voltage, and a specific frequency range of 1.0 to 1.1 GHz.

Qorvo - QPD1016
GaN RF Transistor: QPD1016

The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply.

Qorvo - QPD1425L_PDP
1.2 - 1.4 GHz, 375 Watt, 65 Volt , GaN On SiC RF Transistor: QPD1425L

The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency.

RF Transistors
RF Transistors
Wideband RF transistors are optimized for amplification of DAB and DAR signals
QPD0020_Stacked_PDP
RF Power Transistor: QPD0020

The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations.

RF Power Transistor Series
The PD5xxxx series of radio-frequency (RF) power transistors is aimed at wireless base station and mobile radio applications where high volume...
900-MHz Transistors
900-MHz Transistors
A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
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