600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz 1090 MHz range.
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances, designed for broadband operation (1030 MHz to 1090 MHz). It has easy power control, excellent ruggedness, excellent thermal stability, high efficiency, high flexibility with respect to pulse formats, Integrated ESD protection and Internally matched for ease of use.
Model PTF 10100 is a 900-MHz transistor optimized for amplification of cellular base station signals

Integra Technologies introduces IGT2731L120 with GaN on SiC HEMT technology, exhibiting 13 dB typical gain, and 50% drain efficiency. This device is 100% high power RF tested in a 50Ω RF test fixture.

Designed for CDMA and TDMA applications in the PCS band, model PTF10112 is an RF transistor that features gold top metal and gold bond wires
Integra’s lineup of L-band silicon bipolar transistors boasts industry leading performance. These common base devices offer the highest pulsed RF power, highest gain and smallest footprint available

RFMW introduces the BLS9G2731L-400U from Ampleon as a 400 W LDMOS power transistor ideally designed for use in S-band applications in the 2700 MHz to 31 MHz frequency range. With 400 W pulsed power capability in class-AB circuits, the transistor offers 47% efficiency with up to 13 dB of gain.

This GaN RF Power Transistor operates in the DC-6 GHz frequency range. It’s ideal for applications involving jammers, military and civilian radar, test instrumentation, professional and military radio communications, and wideband or narrowband amplifiers.

Microsemi’s new S-Band power modules provide a complete design solution, combining two Microsemi transistors in hermetically sealed packages, with input/output circuitry matched to 50 ohm. Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.