Transistors

The HF50-250 RF Power transistor is designed for the 50V, 2-30 MHz RF Amplifier, RF Power Supply and RF Power Generator markets. Operating at 30 MHz and 50 Volts DC, the device will provide a minimum Power Gain of 14.5 dB, with the minimum Output Power specified at 250 Watts, PEP.

This GaN RF Power Transistor operates in the DC-6 GHz frequency range. It’s ideal for applications involving jammers, military and civilian radar, test instrumentation, professional and military radio communications, and wideband or narrowband amplifiers.

Integra Technologies offers the IGN0160UM10 broadband GaN transistor for use in general purpose applications. The transistor operates throughout the 0.100 through 6.00 GHz frequency range, and is designed to utilize GaN on SiC HEMT technology.

The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 MHz...

APT RF’s LDMOS Avionics Transistor, 300W, Class AB, common source LDMOS power transistor is designed for Transponder/Interrogator systems covering 1030-1090 MHz...

Integra’s lineup of VHF - VDMOS silicon MOSFET power transistors boasts performance unmatched by any other vendor. These common source power transistor devices offer the highest pulsed RF power and smallest circuit footprint available in any VHF - VDMOS silicon MOSFET high power transistors.

These rugged LDMOS (laterally diffused metal oxide semiconductor) transistors operate over a wide 1 MHz to 2 GHz frequency range. They’re ideal for applications subject to harsh conditions like HF-UHF transmitters and transceivers, white space data transceivers, defense and aerospace systems, television transmitters, test equipment, and radar systems

The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.