Transistors

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QPD0020_Stacked_PDP
RF Power Transistor: QPD0020

The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations.

1800 W, 65 V, 1.0 – 1.1 GHz Highest Power GaN Transistor On The Market: QPD1025L
1800 W, 65 V, 1.0 – 1.1 GHz Highest Power GaN Transistor On The Market: QPD1025L

Qorvo offers the 1800 W, 65 V, 1.0 – 1.1 GHz QPD1025L as the highest GaN transistor on the market. This discrete GaN on SiC HEMT has a package that features input pre-match resulting in ease of external board match and saved board space.

900-MHz Transistors
900-MHz Transistors
A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
Qorvo - QPD1425L_PDP
1.2 - 1.4 GHz, 375 Watt, 65 Volt , GaN On SiC RF Transistor: QPD1425L

The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency.

QPD1028_PDP
GaN On SiC RF Transistor: QPD1028

The QPD1028 is a 750W discrete GaN on SiC HEMT that operates from 1.2 to 1.4 GHz, providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency.

Qorvo - QPD1016
GaN RF Transistor: QPD1016

The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply.

RF Power Transistor Series
The PD5xxxx series of radio-frequency (RF) power transistors is aimed at wireless base station and mobile radio applications where high volume...
RF Transistors
RF Transistors
Wideband RF transistors are optimized for amplification of DAB and DAR signals
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