Transistors
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Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances, designed for broadband operation (1030 MHz to 1090 MHz). It has easy power control, excellent ruggedness, excellent thermal stability, high efficiency, high flexibility with respect to pulse formats, Integrated ESD protection and Internally matched for ease of use.
The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.7 to 3.1 GHz and a 50V supply rail.
Integra Technologies introduces IGN1011L1200 on GaN/SiC, exhibiting 17dB gain and 75% efficiency at 1030-1090 MHz, 50V, for IFF at ELM Mode S pulse conditions. Devices are 100% tested.
The QPD1028 is a 750W discrete GaN on SiC HEMT that operates from 1.2 to 1.4 GHz, providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency.
Integra Technologies introduces IGT2731L120 with GaN on SiC HEMT technology, exhibiting 13 dB typical gain, and 50% drain efficiency. This device is 100% high power RF tested in a 50Ω RF test fixture.
This common source class AB, GaN on SiC HEMT RF power transistor has been specifically designed for Mode-S ELM applications, and secondary surveillance radar (SSR) applications. SSR allows air traffic controllers to identify, track, and measure an airplane’s location.