Transistors

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Integra’s lineup of VHF - VDMOS silicon MOSFET power transistors boasts performance unmatched by any other vendor. These common source power transistor devices offer the highest pulsed RF power and smallest circuit footprint available in any VHF - VDMOS silicon MOSFET high power transistors.

The MAGX-011086 is a wideband transistor optimized for operations in DC - 6 GHz. This GaN HEMT is made with operating output power levels of 4W (36 dBm) in an industry standard, low inductance, and a surface mount QFN package.

The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 MHz...

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.

APT-RF’s Avionics Transistor, Mode-S 1100W, Class C, common base power transistor is designed for standard Mode-S 128uS pulsing at 1030 MHz...

Northrop Grumman’s first three entries in their GaN MMIC Amplifiers have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market. 

The CMPA5259050F gallium nitride (GaN) high electron mobility transistor (HEMT) from Cree is designed to provide high efficiency, high gain, and wide bandwidth capabilities in applications operating in the 5.2 – 5.9 GHz frequency range. Supplied in a ceramic/metal flange package, the amplifier also operates at 50 Watts and 28 volts.

Integra’s lineup of S-band silicon bipolar power transistors boasts performance unmatched by any other vendor. These transistors are designed to address the most stringent requirements for civilian and military radar, including ground, naval, and airborne mechanically and electronically scanned antennas