Transistors

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qorvo QPD2025D
Discrete Transistor: QPD2025D

Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. 

35 W, 2.0 – 6.0 GHz GaN MMIC Power Amplifier: CMPA2060035F

The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

Qorvo - QPD1025L
GaN RF Input-Matched Transistor: QPD1025L

The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space.

DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010
DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010

The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

RF Transistors
RF Transistors
Wideband RF transistors are optimized for amplification of DAB and DAR signals
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor: QPD1022
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor: QPD1022

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.

50-Ohm GaN RF Input-Matched Transistor: QPD1000
50-Ohm GaN RF Input-Matched Transistor: QPD1000

Qorvo offers a wideband, 28 V, 50-Ohm input-matched RF transistor that is ideal for commercial and defense communications applications. This device has an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

900-MHz Transistors
900-MHz Transistors
A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
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