Transistors

Microsemi’s new S-Band power modules provide a complete design solution, combining two Microsemi transistors in hermetically sealed packages, with input/output circuitry matched to 50 ohm. Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.

APT RF’s LDMOS Avionics Transistor, 300W, Class AB, common source LDMOS power transistor is designed for Transponder/Interrogator systems covering 1030-1090 MHz...

APT-RF’s Avionics Transistor, Mode-S 1100W, Class C, common base power transistor is designed for standard Mode-S 128uS pulsing at 1030 MHz...

Wolfspeed’s new GTRA364002FC is a thermally-enhanced high-power RF GaN on SiC HEMT designed for multi-standard cellular power amplifier and other wireless infrastructure applications in the 3400 – 3600 MHz frequency range. The device features an output power of 400 W, 13 dB gain, and operation at 48 V.

Avionics Transistor, 350W, Class C, common base power transistor is designed for transponder avionics applications at 1090 MHz with 10uS, 1% pulsing at Vcc = 50V

APT-RF’s Avionics Transistor, 350W, Class C, common base power transistor is designed for broadband TACAN systems covering 960-1215 MHz with 10uS, 10% pulsing at Vcc = 50V

Integra’s lineup of S-band silicon bipolar power transistors boasts performance unmatched by any other vendor. These transistors are designed to address the most stringent requirements for civilian and military radar, including ground, naval, and airborne mechanically and electronically scanned antennas

The HF12-125 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. The HF12-series products utilize the unique Spectrum Devices’ Bipolar process which offers a 67% improvement in collector-base breakdown voltage, enhancing reliability while maintaining RF performance.