Integra Technologies introduces the IGN1214M380C GaN/SiC transistor, exhibiting 20 dB gain, 54% efficiency at 150 us-10% pulse conditions, and operation in the 1210-1400 MHz frequency range. These devices are 100% tested for large signal parameters.
Integra Technologies introduces IGT2731M130 transistor with GaN on SiC HEMT technology, and exhibits 16 dB typical gain and 50% drain efficiency. It is ideal for applications operating in the 2.7-3.1 GHz frequency range. This depletion mode device is 100% high power RF tested in a 50Ω RF test fixture.
Integra Technologies introduces IGT2731L120 with GaN on SiC HEMT technology, exhibiting 13 dB typical gain, and 50% drain efficiency. This device is 100% high power RF tested in a 50Ω RF test fixture.
The QPD1028 is a 750W discrete GaN on SiC HEMT that operates from 1.2 to 1.4 GHz, providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency.
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