Transistors

The MDS500L is a Vcc = 50V, class C bipolar transistor specifically designed to handle the heavy pulsing of the Mode-S ELM format (32uS on / 18uS off x 48pulses burst). The transistor provides greater than 500W of output power with an input power of 70W...

Integra’s lineup of L-band silicon bipolar transistors boasts industry leading performance. These common base devices offer the highest pulsed RF power, highest gain and smallest footprint available

The PD5xxxx series of radio-frequency (RF) power transistors is aimed at wireless base station and mobile radio applications where high volume...

This high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1 to 500 MHz. Operating at CW conditions, this dual MOSFET device supplies a minimum of 200 watts of power across the instantaneous operating bandwidth of 1 to 500 MHz

Integra Technologies introduces IGT2731L120 with GaN on SiC HEMT technology, exhibiting 13 dB typical gain, and 50% drain efficiency. This device is 100% high power RF tested in a 50Ω RF test fixture.

The IB0810M12 is a 12 watt, common base silicon bipolar transistor intended to operate in class C mode over the instantaneous operating frequency band of 870-990 MHz

Model PTF 10100 is a 900-MHz transistor optimized for amplification of cellular base station signals

ntegra’s lineup of UHF silicon bipolar and MOSFET high power transistors boasts industry leading performance. These common source and common base power devices offer the highest pulsed RF power and smallest circuit footprint available in any UHF silicon bipolar and MOSFET high power transistor