Transistors

TRANSISTORS PRODUCTS & SERVICES

500 W GaN/SiC Long-Pulse L-Band Transistor: IGN1214L500B 500 W GaN/SiC Long-Pulse L-Band Transistor: IGN1214L500B

Integra Technologies introduces the IGN1214L500B long-pulse transistor with GaN on SiC HEMT technology, operating at 380 W for applications from 1.2 – 1.4 GHz. The transistor exhibits 15.5 dB typical gain, and 65% efficiency, at 2 milliseconds and 20% pulse conditions. It is specified for use under Class AB operation.

900-MHz Transistors 900-MHz Transistors
A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
Rugged LDMOS RF Power Transistors for Harsh Conditions Rugged LDMOS RF Power Transistors for Harsh Conditions

These rugged LDMOS (laterally diffused metal oxide semiconductor) transistors operate over a wide 1 MHz to 2 GHz frequency range. They’re ideal for applications subject to harsh conditions like HF-UHF transmitters and transceivers, white space data transceivers, defense and aerospace systems, television transmitters, test equipment, and radar systems

Synthesized LO Loop Test Translators (LTTs): ALR Series Synthesized LO Loop Test Translators (LTTs): ALR Series

The new ALR series of dual channel loop test translators (LTTs) features simultaneous operation within the Ka and Ku bands, and has the ability to introduce different transfer characteristics in each channel. These instruments are used in an array of testing applications for frequency conversions of uplink (Tx) frequencies to either downlink (Rx) frequencies or to L-Band, and for L-Band to downlink (Rx).

GaN MMIC Amplifiers/Transistors GaN MMIC Amplifiers/Transistors

Northrop Grumman’s first three entries in their GaN MMIC Amplifiers have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market. 

Power Transistors And Modules For S-Band Radar Power Transistors And Modules For S-Band Radar
Microsemi’s new S-Band power modules provide a complete design solution, combining two Microsemi transistors in hermetically sealed packages, with input/output circuitry matched to 50 ohm. Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.
RF Power Transistor RF Power Transistor
The PTF 10149 RF power transistor is intended for use in applications in the 920-960 MHz band
L-Band Transistors L-Band Transistors
Integra’s lineup of L-band silicon bipolar transistors boasts industry leading performance. These common base devices offer the highest pulsed RF power, highest gain and smallest footprint available
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