The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.
All GaN on SiC HEMT devices are constructed with Qorvo QGaN25HV process which includes advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. The process can potentially lower system costs in terms of fewer amplifier line-ups and reduced thermal management costs. All GaN power transistors are lead free and ROHS compliant.
For more specifications, features, and parameters for the QPD1009 and QPD1010, download the available datasheets.