Datasheet | December 13, 2016

DC – 4 GHz GaN RF Transistors: QDP1010 Datasheet

Source: Qorvo

The QDP1010 is a discrete GaN on SiC HEMT operating from the DC to 4 GHz frequency range. It is a 10W, 50V device with an output power level of 11W at 2 GHz, and a linear gain of 24.7 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications. For more specifications, features, and parameters for the QDP1010, download the datasheet.