Welcome to RF Globalnet's IMS2016 Resource Center, your guide to the 2016 IEEE MTT-S International Microwave Symposium.
This year's event will take place from May 23 - 27 in San Fransisco, CA. As always, it boasts a strong technical program covering the latest research, development, and trends in the RF and microwave industry, along with an exhibition of the newest technologies and services available.
So take a look around this resource center. Plan your trip to IMS2016. Get a small taste of what the event will hold. And, if you go to the show, stop by and visit us at BOOTH 1118. Among other things, you can register to win an Apple Watch in RF Globalnet's IMS2016 giveaway. We look forward to seeing you in San Fransisco.
Our final video at IMS 2016 features CPI’s C-Band GaN solid state RF power amplifier module for maritime and defense radars, and high performance weather radars.
Innovation tends to lag in the power amplifier side of the system-upgrade business, and hardware systems designers may not fully understand the potential element of portability is solid state amplifiers. Jon Jacocks with Empower RF spent a few minutes with us on the last day of IMS 2016 to discuss the issue.
Greg Jue with Keysight Technologies introduced us to a 73 GHz wideband OTA at IMS 2016. Watch the video to learn how it’s used in mmWave applications involving high data throughput.
Daren McClearnon with Keysight Technologies spent a few minutes with us on the last day of the IMS 2016 exhibition to discuss phased array beamforming and its impact on 5G, EW systems, and new space satellite applications.
Steve Walley with dB Control took a few minutes out of the last day of IMS 2016 to answer this very question. Watch the video to hear what he had to say.
Phil Myers with Greenray spent some time with us on the last day of IMS 2016 to help set the record straight on an industry misconception. If you’re under the impression that you need to start with the best static noise in order to achieve the best performance under vibration, then this one is for you.
At IMS 2016, senior RF applications engineer Tammy Ho with Qorvo showed us three new Doherty amplifiers and discussed how they’re being used in trials for 5G rollout in 2020.
Internet connectivity is becoming prevalent in more and more products as the IoT movement has taken off. As a result, wireless standards are being integrated into every day products. This presents a unique challenge for engineers who haven’t dealt with wireless technology. At IMS 2016, applications engineer Ben Maxson with Copper Mountain Technologies spoke with us about some of those challenges, and also spent some time introducing us to one of his company’s new reflectometers, which just so happen to be ideal for wireless testing in applications related to the IoT.
Corry Micronics garnered a fair amount of attention at IMS 2016 due to their new, incredibly lightweight microwave bandpass filter. Watch the video to learn more about how they made it and what it can mean for your next application with challenging weight restrictions.
Gopi Gampala, senior application engineer with Altair spent a few minutes with us on day two of the 2016 IMS exhibition to talk to us about their FEKO EM simulation software and the advantage of its hybridization of multiple solvers.
Choosing the right amplifier for your application isn’t as simple as looking over a datasheet. After a few decades worth of experience in RF design and applications engineering, Alan Ake with Guerilla RF has learned the intricacies of selecting the right amplifier, and now he’s sharing that information with you.
Stan Oda and Joe Mallon talked to us about one of Anritsu’s new vector network analyzers on day two of the IMS 2016 exhibition. Watch the video to learn about its features and specifications, and stick around until the end for information on its potential role for E-band antenna pattern measurements.
AR has been designing RF amplifiers since 1969, and they’ve learned a thing or two about the intricacies of high power amplifier design in that time. Their engineering manager Rob Rowe took some time out during the first day of the IMS 2016 exhibition to share some of that knowledge with you.
Selecting the wrong RF power sensor can be detrimental to the accuracy of your results, and the time it takes to get your measurements. Fortunately, Lawrence Wilson with Rohde & Schwarz is here to give you some in depth insight on what to consider when selecting a sensor to avoid such setbacks.
At IMS 2016, Jakub Kucera with Berkeley Nucleonics offered up a demonstration of one of their phase noise analyzers and how it can be used to measure pulsed RF signals.
Jeff Barney with Remcom spoke with us at IMS 2016 in regards to the challenges RF and microwave engineers run into when determining component values in matching network layouts.
There are many things you need to think about when selecting an EM solver for electromagnetic design and EM simulation, and Martin Timm with CST of America is here to help. Watch the video for information on key considerations for selecting the right software for your application.
Bryan Walker with JFW closed out our IMS 2015 coverage with a short and sweet demo of the ease-of-use of their 50P2014 SMA attenuator.
Dominic Overton and Dr. Esen Bayar took a few minutes out of day three of IMS in 2015 to familiarize us with their wide range of offerings. Watch the video for an overview of solutions designed for telecoms operators, global satellite operators, and the government and military sector.
Tim Brauner with Dielectric Labs gave us an up-close view of what his company had on display at IMS in 2015. Check out the video to hear about lowpass filters, power dividers, a brand new line of directional couplers, and an SMT 6dB resistive divider.
On the last day of IMS 2015, CJ McBride with Corry Micronics introduced us to their 3-channel attenuator. It covers the 400 MHz to 3 GHz frequency range and was designed for a major mobile access carrier.
Qorvo has announced the introduction of three new gallium nitride (GaN) power amplifiers (PAs) that achieve industry-leading power, power added efficiency (PAE) and gain at the IMS 2016. Qorvo's newest GaN PAs are optimized for use in military radar, communications and electronic warfare systems.
With K(LIN)™ constant linearity technology, F1455 Series Variable Gain Amplifiers from IDT maintain 38 dBm output third order intercept point for first 12 dB of gain control range. These devices feature broadband 1,400–2,300 MHz operation, 4 dB NF at max gain (2,000 MHz), and 32 dB flat, temperature invariant max gain. The F1455 is available in a 6 x 6 mm 28-QFN package, and is sampling now to customers. IDT representatives will be available to discuss K(LIN) and other innovations at IDT's booth number 316 at IMS2016, Moscone Center, May 24 - 26.
NXP Semiconductors N.V. has announced the expansion on their portfolio of 48V gallium nitride (GaN) RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base-stations. NXP is showcasing the new GaN transistors in booth 1839 at the IEEE International Microwave Symposium (IMS 2016) in San Francisco (23-26 May).
At the 2014 IEEE MTT International Microwave Symposium earlier this month, I had the opportunity to speak with the event’s general chair, Dr. Larry Dunleavy, about the state of the RF and microwave design industry. While he acknowledged that it is a time of relative uncertainty — due in large part to constrained military budgets and conservative fiscal forecasts for 2014 — he also pointed out that there are plenty of emerging markets where RF and microwave technology is making a significant impact. With the Internet of Things (IoT) driving innovation in burgeoning markets like automotive and healthcare and the development of 5G pushing wireless technology to further heights, there was good reason for nearly 600 companies to flock to the IMS2014 exhibition in Tampa, Fla.
One of the things I love about the IEEE MTT-S International Microwave Symposium is the annual opportunity it affords us to reflect on the current state of the RF/microwave design industry. By attending a combination of keynote addresses, panel sessions, and technical presentations, and by speaking to as many exhibitors and attendees as possible, one can piece together a reasonably good mosaic of the major trends and issues shaping the industry.
Never will you find more cutting-edge RF and microwave technology on display in one place than at the IMS Exhibition. Hundreds of component manufacturers, chipmakers, instrumentation suppliers, software developers, and other technology companies fill the IMS exhibit halls, showcasing tens of thousands of products, many of which are making their first public appearance. With all due respect to the dozens of compelling technologies that did not make the list, here are seven that really turned our heads at IMS2013.
Like a restaurant with way too many appealing choices on its menu, IMS poses a particular dilemma to attendees and non-attendees alike. With so many educational opportunities available over such a short period of time, which ones should you attend (if you're going)? And with so much information coming out of the symposium in the days and weeks that follow, what’s worth paying attention to or investigating further (if you're not)? I caught up with IMS2013 Technical Program Chair Lenoard Hayden to get his advice.
Last time, I went over how to make life easy for the IMS reviewer so that we can increase the chances of getting a paper accepted. It is important to devote conscious effort to making it easy for the reviewer to give high scores in the originality, clarity, quantitative, and interest categories. In this column, I concentrate on the part that I feel is most important, quantitative. Note that all four parts are formally assigned equal weights when assigning scores and other reviewers might have different opinions, so this represents only my personal views on the matter.
Last time, we talked about the rationale behind the IMS double-blind review system, where not only are the reviewers not known to the authors, but the authors are not (nominally) known to the reviewers. This reduces the chance of any bias on the part of the reviewer for or against any particular author. However, it also makes it harder for the reviewer to catch double publication. Now, we look at what you can do to increase chances of acceptance.
Without fail, the RF Globalnet team returns from IMS each year with two things: 1) really sore feet (from running back and forth across an exhibit hall for three days), and 2) an enormous pile of news announcements, datasheets, handwritten notes, video footage, and other information about the exciting new RF and microwave technology we saw. Now that our feet have finally stopped throbbing, the time has come for us to translate that mountain of data into an easily scannable synopsis of all the technology on display at the IMS2012 exhibition.