TagoreTech Launches High-Power RF Receiver Front-End Module
TagoreTech, a leading innovator in GaN-based RF and power solutions, today announced the release of the TSL8028N, a compact, high-performance receiver front-end module tailored for demanding wireless infrastructure and radar applications operating in the 2 to 5 GHz frequency range.
The TSL8028N is a single-channel integrated RF front-end module that combines a 2-stage GaAs low noise amplifier (LNA) with a robust GaN SPDT switch, delivering best-in-class performance in a small 5 × 5 mm2 QFN package. With on-chip biasing and matching, it simplifies design and reduces component count for 4G/5G infrastructure, macro base stations, small cells, SDARS, and cellular repeaters.
Key Features:
· High Gain Mode: 33 dB gain, 1.2 dB total noise figure, and OIP3 of 32 dBm (typ. at 3.6 GHz)
· Low Gain Mode: 14 dB gain with just 50 mA current draw
· TX Mode: Exceptionally low 0.3 dB insertion loss and support for 50 dBm LTE average power
· Excellent Isolation : Over 45 dB RX-TX isolation in TX mode
· Fast Switching: Mode transitions in under 2 µs
· Power Efficient: Draws only 4 mA in power-down mode
The TSL8028N delivers the performance, efficiency, and ruggedness required for modern RF front ends, including high linearity, low noise reception, and high-power handling. Designed to operate reliably up to 105°C case temperature, the module supports full lifetime operation under LTE and 5G TDD average power conditions.
“With the TSL8028N, we are empowering system designers to meet increasing RF performance demands in a compact, energy-efficient format,” said Paul Hart, CEO and President at TagoreTech. “Its GaN/GaAs integration delivers a unique blend of low noise, high gain, and robust switching in a small footprint—ideal for today's high-density RF systems.”
The product is offered in a 32-lead QFN package and is now available for sampling.
For more information and full datasheet, email us at support@tagoretech.com or contact your local TagoreTech representative. TagoreTech will be exhibiting at IMS 2025 from June 16–19, 2025, booth #332. For more information, visit www.tagoretech.com.
About TagoreTech
Founded in January 2011, TagoreTech is pioneering the use of Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for RF and power management applications. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA, and Kolkata, India. Our R&D team is focused on delivering disruptive solutions that leverage wide bandgap technologies to address RF and power design challenges, helping customers accelerate time-to-market across a wide range of applications. For more information, visit www.tagoretech.com.