Crystals

Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively

The MM1-1857L is a passive double balanced MMIC mixer.  It features excellent conversion loss, superior isolations and spurious performance across a broad bandwidth, in a highly miniaturized form factor. 

Qorvo offers a wideband, 28 V, 50-Ohm input-matched RF transistor that is ideal for commercial and defense communications applications. This device has an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

The passive MMIC bandpass filter die is an ideal solution for small form factor, high rejection filtering. Passive GaAs MMIC technology allows production of smaller filter constructions that replace larger form factor circuit board constructions. 

Misconceptions can cause problems for engineers when measuring power in RF designs...

Instabend are flexible, coaxial microwave assemblies for interconnects between RF circuit cards, modules, and enclosure panels. The cable can be bent very closely behind the connector, simplifying cable routing.

The AMP2065G-LC-2KW Solid State High Power Amplifier is designed for replacing aging TWT technology. A broadband rugged EMC Class A/AB linear Solid-State design for all modulations & industry standards.

AR, in partnership with Comtest Engineering, has established a number of predefined chamber designs that can easily be used when requesting a ROM (Rough Order of Magnitude) price. The fourteen chambers below represent the offerings that are readily available for our customer’s reference and early planning.