Crystals
PRODUCTS AND SERVICES
A.H. Systems' designs, manufactures and delivers high performance Loop Antennas for a wide range of magnetic field testing. Whether used in a set to measure shielding effectiveness per MIL-STD 285 and NSA 65-6, or individually to satisfy specific requirements, the Loop Antenna is an efficient, low cost solution.
KRYTAR’s directional couplers are uniquely designed for systems applications where external leveling, precise monitoring, signal mixing, or swept transmission and reflection measurements are required. KRYTAR’s latest addition, Model 10205006, enhances the selection of multi-purpose, stripline designs that exhibit excellent coupling over a ultra-broadband frequency range of 2.0 to 50 GHz in a single, compact and lightweight package.
Mini Circuits offers a series of “full fan-out” or “fully non-blocking” matrices using a combination of programmable attenuators and splitters/combiners that deliver a flexible set of paths between the input and output ports. The configuration is analogous to a switch matrix except any individual path can be “on” (0 dB attenuation), or “off” (max attenuation), or any specific path loss in-between.
The QPC0045 is an ultra-wideband SOI 6-bit digital step attenuator (DSA). It operates over 0.01 to 48 GHz and provides a 31.5 dB attenuation range with a LSB of 0.5 dB. It also achieves a low step error of less than 0.1 dB typically.
The TQP9326 is a 0.5 Watt, two-stage power amplifier that provides 30 dB gain and 27 dBm of output power. The TQP9326 offers a pre-distortion correction over the 2.3-2.7 GHz frequency range for a number of different Bands, and applications such as enterprise femtocells, and small cell base stations.
ETS-Lindgren's laser-powered EMSense 40 Electric Field Probe embodies the latest innovations in isotropic sensor design, low noise, and miniaturized electronics. Designed to be single range reading, the EMSense 40 can read data continuously over the entire dynamic range.
The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.