Crystals

A.H. Systems' high-gain preamplifier delivers robust performance across a broad operating frequency range. The integrated one-watt limiter provides added protection, making it an ideal solution for testing in high-field environments.

XFdtd can compute the capacitance of complex sensor designs, allowing the designer to choose the best geometry for their needs without prototyping.

D-TA offers the open-architecture MFEL-5000 as the most advanced and most cost effective ELINT solution in the market. The MFEL5000 uses dual antennas (OMNI & Spinner DF), dual receivers, and a large data storage server for multi-core software processing, recording, and analysis of signals of interests (SOIs).

The APN319 from Northrop Grumman is a GaN power amplifier that operates from 47.2 to 51.4 GHz. It provides an output power of 7 W with a gain of 20 dB and Power Added Efficiency of 19%. This amplifier requires 24 V DC supply and consumes 200mA of current. It is fabricated using a GaN on SiC process and measures 2.8 x 1.4 mm (3.92 mm²). The amplifier can be used in 5G and SATCOM systems.

The Model 75S1G6C is a solid-state, Class A design, self-contained, air-cooled, broadband power amplifier designed for applications where instantaneous bandwidth, high gain and linearity are required.

The ADRF5473 is a 6-bit digital attenuator with a 31.5 dB attenuation range in 0.5 dB steps manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of the device is metalized and connected to ground.

AR Modular RF's line of lightweight, simple-to-use tactical booster amplifiers make communications clearer, more reliable, and longer range. They keep working in even the most extreme conditions.