Crystals
PRODUCTS AND SERVICES
Introducing AMP4087P-500W: A high-power, ultra-wideband amplifier with exceptional performance and reliability for demanding applications.
The UJ4C075023L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration where a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
The Exodus AMP20147 is a solid-state high-power amplifier designed for a wide range of applications including EMI/RFI testing, laboratory use, continuous wave (CW) and pulsed operations, and communication systems.
The Standard Gain Horn Antennas are designed specifically for utilization in emissions and immunity testing over the frequency range of 1 to 40 GHz. Each antenna is linearly polarized and has medium gain, low VSWR, and a constant antenna factor.
The MQH-40110M2 is a 40–110 GHz quadrature (90°) hybrid in our miniature M2-package enabling operation up to 110 GHz.
Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.
The Model KMW2026M15 is an RF power amplifier module for OEM applications or integration into a user system comprised of a printed wiring assembly housed in a machined aluminum enclosure.