Crystals

The RFMS8X8-1-18GNB is an 8 input and 8 output non-blocking RF matrix switch that allows any of the 8 inputs to be routed to any or all the 8 outputs.  The unit operates over the frequency range of 1 GHz to 18 GHz and has signal gain, frequency compensation and controlled path lengths.  These features provide minimal signal loss, minimal frequency response variations and matched time delay between paths. 

The Si86S6x products are state-of-the-art digital isolators that include several outstanding and unique features. These devices are robust, with a 6.0 kVrms isolation barrier, and have low-power and sleep modes for conserving power.

The UJ4SC075009B7S is a 750 V, 9 mohm Gen 4 SiC FET based on a unique cascode circuit configuration where a normally-on SiC JFET is co-packaged with a Si MOSFET to make a normally-off SiC FET device.

QPA1314 is a high-power GaN MMIC amplifier for Satcom applications. The amplifier is packaged for easy integration and is ideal for both commercial and military markets.

The MPA2001 Solid State Power Amplifier offers a compact benchtop, Class AB linear GaAsFET design that ensures wide bandwidth and compatibility with various modulation standards.

The TSX Series of chip attenuators pushes the boundaries of Size, Weight and Power in a cost effective, easy to implement surface mount solution, suitable for a wide array of applications. 

The ATN20-0040PSM is a surface mount GaAs MMIC 20dB attenuator in a DFN package. This attenuator is an ideal solution for attenuating a signal and can be used in a wide range of applications.