MMIC Amplifiers

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GaN MMIC Amplifiers/Transistors GaN MMIC Amplifiers/Transistors

Northrop Grumman’s first three entries in their GaN MMIC Amplifiers/Transistors have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market. These GaN MMIC Amplifiers/Transistors are ideal for several applications including point-to-point radio, phased-array radar, Military SatCom, and point-to-multipoint communications, SATCOM terminals, and more. Links to datasheets of the amplifiers that make up this line can be found below.

SNA-300: DC-3 GHz Cascadable GaAs MMIC Amplifier SNA-300: DC-3 GHz Cascadable GaAs MMIC Amplifier
Sirenza Microdevies' SNA-300 is a GaAs monolithic broadband amplifier in die form. at 1950 MHz, this amplifier provides 22dB of gain when biased at 35mA.
13.5 To 16.0 GHz GaAs MMIC Power Amplifier - XP1057-BD 13.5 To 16.0 GHz GaAs MMIC Power Amplifier - XP1057-BD
Mimix Broadband’s three stage 13.5-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 17.0 dB with +48.0 dBm output third order intercept.
Low Noise MMIC VCO Family With Buffer Amplifiers: RFVC182X Series Low Noise MMIC VCO Family With Buffer Amplifiers: RFVC182X Series
RFMD’s RFVC182X family of narrowband MMIC voltage controlled oscillators (VCOs) with integrated RF output buffer amplifiers have excellent temperature, shock, and vibration performance. These VCOs are suitable for applications in the 4.45 to 8.7GHz frequency range. All products in this family of VCOs provide POUT >8dBm from a +3V single supply and deliver low phase noise performance with minimum power consumption. Each VCO comes in a compact, RoHS compliant 4.0 x 4.0mm QFN package.
E-pHEMT MMIC - AE314 E-pHEMT MMIC - AE314

AE314 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.

XP1008 11 To 16 GHz GaAs MMIC Power Amplifier XP1008 11 To 16 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
800-2500MHz MMIC Wideband Amplifier (ZAMP002H6TA)
The ZAMP002 is an low current high performance RF amplifier designed for L band and IF applications. Although the ZAMP002 has been designed primarily for DBS applications the ZAMP002 is capable of extending to frequencies of 2.5GHz so it has a good fit with various applications. An additional benefit of the ZAMP002 is it’s rising gain characteristic, this has been designed to counteract the gain losses found at the higher frequencies.
 MHA-495433: 4.9 To 5.4 GHz 2W InGaP HBT MMIC Power Amplifier MHA-495433: 4.9 To 5.4 GHz 2W InGaP HBT MMIC Power Amplifier
The MHA-495433 is a high-performance reliable MMIC power amplifier utilizing high-reliability, high-breakdown voltage InGaP HBT technology. Power MMIC is ideally suited for driver or output stages in wireless applications such as 802.16 WiMAX, 802.11 WLAN & ISM, point-to-point radios & Telecom Infrastructure. MHA-495433 HBT MMIC Power Amplifier Chip has 50-ohm fully-matched output, pre-matched input, on-chip DC blocking capacitor, active bias and power detector built into the chip.
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