MMIC Amplifiers

Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity

The MMA-022025B is a 2 - 20GHz broadband MMIC amplifier with typical 27dBm output power at 1 dB compression point. The MMIC chip is realized in advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF connections for broad range applications

Mimix Broadband, Inc.'s XP1005 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) four stage power amplifier...

Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm

Avago Technologies’ 37 - 40 GHz 1W Power Amplifier (MMIC Die): AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37 GHz and 40 GHz. Typical applications include point-to-point radio systems and millimeter – wave communications.

Mimix Broadband’s three stage 13.5-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 17.0 dB with +48.0 dBm output third order intercept.

The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

Mimix Broadband’s three stage 17.0 to 24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +27.0 dBm P1dB output compression point across much of the band. The device also includes an on-chip temperature compensated output power detector.