MMIC Amplifiers


The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

REMEC D&S designs high-performance, cost-effective MMICs, including low-noise and high-power amplifiers, switches, phase shifters, detectors, and attenuators from RF, microwave, and millimeter wave (mmWave) bands for next generation space, missile defense, communication, and unmanned aerial vehicle applications.

The HMC7149 is 10 watt GaN MMIC amplifier covering the 6-18 GHz frequency range. It’s ideal for applications involving general communications, test instrumentation, and radar.

Northrop Grumman ST Foundry Services & MMIC Products offers low noise amplifiers, power amplifiers, switches, multipliers, mixers and attenuators for millimeter-wave applications.

Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.
The CMM1434-SM is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transmit subsystems designed for Ku-Band VSAT applications. The CMM1434-SM provides 31.0 dB linear gain and delivers 2.5 watts of output power at saturation operating from 13.50 to 14.50 GHz frequency...
The MMA-022020B is a 2 - 20GHz broadband MMIC medium power amplifier with 22.5 dBm output power. It is realized in advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF connections for broad range applications

AE314 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.