MMIC Amplifiers
PRODUCTS AND SERVICES
The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
The QPA1111 is a high-power, packaged X-band MMIC amplifier fabricated using a 0.15 µm GaN-on-SiC process for reliable, high-efficiency performance in demanding applications.
The IADA-2050PSM is an integrated MMIC active doubler fabricated with GaAs Schottky diodes that operates over a guaranteed 10 to 25 GHz input frequency range or a doubled output frequency range of 20to 50 GHz.
The QPA1017D is Qorvo’s MMIC power amplifier operating from 5.7 – 7.0 GHz for C-band radar and satellite communications applications. Fabricated on Qorvo’s production 0.15 um GaN on SiC process, the amplifier produces 50 W of saturated output power with 21 dB of large-signal gain while achieving greater than 40% power-added efficiency.