AE312 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.
Mimix Broadband’s two stage 2 to 18 GHz GaAs MMIC low noise amplifier has a small signal gain of 15 dB with a noise figure of 3.8 dB across most of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high
repeatability and uniformity
Mimix Broadband’s three stage 20.0-38.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 17.0 dB with a noise figure of 3.0 dB. The device comes in a RoHS compliant, 3x3mm QFN package and requires only a single positive bias supply.
Sirenza Microdevices’ SNA-200 is a GaAs monolithic
broadband amplifier (MMIC) in die form. At 1950 MHz, this
amplifier provides 16dB of gain when biased at 50mA.
The MMA-333833-Q5 is a high linearity InGaP HBT MMIC amplifier. It is in a low cost QFN 5X5mm Green Package. Applications include the driver and the output stage of the power amplifiers for WLAN and WiMax infrastructure base
stations and access points. The third order intercept performance of the MMA-333833A-Q5 is excellent and is typically 11 dB above the 1 dB gain compression point. It provides +33 dBm P1dB, +26 dBm Pave @2.5 % EVM under 802.16/64 QAM input signal, +44 dBm OIP3 and 25 dB gain.
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