MMIC Amplifiers

The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

The QPA0016 is a high-power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's 0.15 um GaN-on-SiC process.

Mimix Broadband’s three stage 20.0-38.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 17.0 dB with a noise figure of 3.0 dB. The device comes in a RoHS compliant, 3x3mm QFN package and requires only a single positive bias supply.

The TriQuint TGA2525 is a compact LNA Gain Block MMIC with adjustable gain control (AGC). The LNA operates from 2-18 GHz and is designed using TriQuint’s proven standard 0.15 um Power pHEMT production process.

Mimix Broadband, Inc.'s XP1005 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) four stage power amplifier...

The MMIQA-0218HPSM is a versatile, robust, and broadband IQ mixer with an integrated broadband LO driver amplifier. It is ideal for IQ, single sideband, and image reject mixing applications

The QPA1111 is a high-power, packaged X-band MMIC amplifier fabricated using a 0.15 µm GaN-on-SiC process for reliable, high-efficiency performance in demanding applications.

The Qorvo QPA1022D is a MMIC power amplifier operating from 8.5 – 11 GHz for radar, electronic warfare, and satellite communications applications. Fabricated on Qorvo’s production 0.25 um GaN on SiC process, the amplifier produces greater than 4 W of saturated output power and 24 dB of large-signal gain while achieving greater than 45% power-added efficiency.