MMIC Amplifiers

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XP1012 37 To 40 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm
CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier
Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity
XP1009 17 To 21 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s two stage 17.0-21.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.0 dBm
Capture1
2-18 GHz Low Noise Amplifier With AGC: TGA2525

The TriQuint TGA2525 is a compact LNA Gain Block MMIC with adjustable gain control (AGC). The LNA operates from 2-18 GHz and is designed using TriQuint’s proven standard 0.15 um Power pHEMT production process.

Qorvo - QPL3050
6 - 14 GHz (C, X, And Ku-Band) Driver Amplifier: QPL3050

The QPL3050 is a broadband MMIC driver amplifier housed in a leadless 3x3 mm plastic surface mount package.

Qorvo - QPA4246D
37.5 - 42.5 GHz 10 Watt GaN Amplifier: QPA4246D

The QPA4246D is a high-power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15).  It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band.

CMM1100-QF: 2 To 18 GHz GaAs MMIC Low-Noise Amplifier
Mimix Broadband’s two stage 2 to 18 GHz GaAs MMIC low noise amplifier has a small signal gain of 15 dB with a noise figure of 3.8 dB across most of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
QPA1022D
8.5 – 11 GHz, 4 W GaN Power Amplifier: QPA1022D

The Qorvo QPA1022D is a MMIC power amplifier operating from 8.5 – 11 GHz for radar, electronic warfare, and satellite communications applications. Fabricated on Qorvo’s production 0.25 um GaN on SiC process, the amplifier produces greater than 4 W of saturated output power and 24 dB of large-signal gain while achieving greater than 45% power-added efficiency.

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