MMIC Amplifiers

Recent improvements on the CMOS Silicon process introduced many one-chip solutions to the market. DSP, Analog/Digital converter, Digital/Analog converter, Up/Down converter, VCO and PLL Synthesizers are one of those one-chip solutions in the market today. However, CMOS has some drawbacks in higher power levels of 10dBm+ and having a high noise figure.

Sirenza Microdevices' SNA-600 is a high-performance GaAs Heterojunction Bipolar Transistor in die form. A Darlington configuration is utilized for broadband performance to 6.5 GHz.

Sirenza Microdevices' SNA-400 is a GaAs monolithic broadband amplifier in die form. This amplifier provides 13dB of gain when biased at 65mA and 5.0V.

Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.

Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity

Mimix Broadband’s three stage 13.5-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 17.0 dB with +48.0 dBm output third order intercept.

The MMA-022030B is a 2 - 20GHz broadband MMIC power amplifier with nearly 1W output power (P-2dB). It is realized in advanced AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF connections for broad range applications

Custom MMIC has developed two new LNA MMIC that operate in the 6-18 GHz frequency and feature a 1.5 dB noise figure