MMIC Amplifiers

The MMA-333833-Q5 is a high linearity InGaP HBT MMIC amplifier. It is in a low cost QFN 5X5mm Green Package. Applications include the driver and the output stage of the power amplifiers for WLAN and WiMax infrastructure base stations and access points. The third order intercept performance of the MMA-333833A-Q5 is excellent and is typically 11 dB above the 1 dB gain compression point. It provides +33 dBm P1dB, +26 dBm Pave @2.5 % EVM under 802.16/64 QAM input signal, +44 dBm OIP3 and 25 dB gain.

The E-pHEMT MMIC (50 ohm) Product Line can be used in applications including Cellular/GSM, PCS, DCS, W-CDMA, Wibro, WiMax, WiFi, Tetra, CATV, Satellite system, RFID, Femtocell, and Multi-metering.

RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.

Avago Technologies’ 37 - 40 GHz 1W Power Amplifier (MMIC Die): AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37 GHz and 40 GHz. Typical applications include point-to-point radio systems and millimeter – wave communications.

Mimix Broadband’s three stage 17.0 to 24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +27.0 dBm P1dB output compression point across much of the band. The device also includes an on-chip temperature compensated output power detector.

QPA1314 is a high-power GaN MMIC amplifier for Satcom applications. The amplifier is packaged for easy integration and is ideal for both commercial and military markets.

The TriQuint TGA2525 is a compact LNA Gain Block MMIC with adjustable gain control (AGC). The LNA operates from 2-18 GHz and is designed using TriQuint’s proven standard 0.15 um Power pHEMT production process.

Qorvo's QPA0015 is a powerful Ku-Band MMIC amplifier fabricated using their advanced GaN-on-SiC process. Designed for Satcom applications, it delivers 3 Watts of linear power with excellent intermodulation distortion performance.