MMIC Amplifiers

Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity

The CMM1434-SM is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transmit subsystems designed for Ku-Band VSAT applications. The CMM1434-SM provides 31.0 dB linear gain and delivers 2.5 watts of output power at saturation operating from 13.50 to 14.50 GHz frequency...

The QPA4246D is a high-power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15).  It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band.

roadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm

Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively

Qorvo offers the CMD240C4 wideband GaAs MMIC distributed amplifier housed in a leadless 4x4 mm surface mount package. The amplifier operates from DC to 22 GHz and is ideal for radar, space, satcom, test and measurement, and electronic warfare applications.

The QPA1111 is a high-power, packaged X-band MMIC amplifier fabricated using a 0.15 µm GaN-on-SiC process for reliable, high-efficiency performance in demanding applications.

Mimix Broadband’s four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm.