Mimix Broadband’s three stage 11.0-16.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +38.5 dBm. This
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity
The MMA-022030B is a 2 - 20GHz broadband MMIC power amplifier with nearly 1W output power (P-2dB). It is realized in
advanced AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip
input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF
connections for broad range applications
AE314 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
Sirenza Microdevices’ SNA-200 is a GaAs monolithic
broadband amplifier (MMIC) in die form. At 1950 MHz, this
amplifier provides 16dB of gain when biased at 50mA.
The MMA-061827 is a 6-18 GHz GaAs power amplifier MMIC chip. Small signal gain is typically 8.0 dB across band. In a balanced configuration, input and output VSWR are better than 1.5:1 with a typical P1B more than 29 dBm, and a Psat of
30 dBm. The typical performance is shown below. MMA-061827 can be used in broadband EW and defense applications. Hi-rel and space screening are available.
The MMA-022020B is a 2 - 20GHz broadband MMIC medium power amplifier with 22.5 dBm output power. It is realized in
advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip
input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF
connections for broad range applications
,sot363[1].jpg "MMIC Wideband Amplifier (BGM1014 T/R)")