MMIC Amplifiers


NEC's UPC2711TB and UPC2712TB are Silicon MMIC Wideband Amplifiers manufactured using NEC's 20 GHz fT NESATTM III silicon bipolar process. These devices are designed for use as buffer amps in DBS tuners. The UPC2711/ 12TB are pin compatible and have comparable performance as the larger UPC2711/12T, so they are suitable for use as a replacement to help reduce system size. These IC's are housed in a 6 pin super minimold or SOT-363 package.

AE314 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.

Mimix Broadband’s four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm.
RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.
REMEC D&S designs high-performance, cost-effective MMICs, including low-noise and high-power amplifiers, switches, phase shifters, detectors, and attenuators from RF, microwave, and millimeter wave (mmWave) bands for next generation space, missile defense, communication, and unmanned aerial vehicle applications.

Custom MMIC has developed two new LNA MMIC that operate in the 6-18 GHz frequency and feature a 1.5 dB noise figure

The MMA495930-Q4 is a high linearity MMIC amplifier utilizing MwT’s proprietary linear device technology. Packaged in low cost QFN 4X4mm Green Package, this product is specifically designed as a driver or final power amplifier stage for 802.16 applications in the 4.9-5.9GHz bands.

The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.