The CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for civil and military pulsed radar applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
The HMC7149 is 10 watt GaN MMIC amplifier covering the 6-18 GHz frequency range. It’s ideal for applications involving general communications, test instrumentation, and radar.
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