MMIC Amplifiers

The MMA-061827 is a 6-18 GHz GaAs power amplifier MMIC chip. Small signal gain is typically 8.0 dB across band. In a balanced configuration, input and output VSWR are better than 1.5:1 with a typical P1B more than 29 dBm, and a Psat of 30 dBm. The typical performance is shown below. MMA-061827 can be used in broadband EW and defense applications. Hi-rel and space screening are available.

The HHPAV-433 Power Amplifier covers the frequency range from 59.5 to 60.5 GHz and is usable over the range of 58 to 64 GHz. The amplifier has an output power of +28.5 Psat and 18 dB gain. MMIC technology is employed for high reliability and repeatability employing one die. A single +6.0V bias is used to power up the amplifier. An onboard voltage regulator and bias sequencing circuitry provide the proper biasing for the unit.

High definition display such as full HD, Plasma TV and LED TV is currently expanding its market share in individual homes. HD quality programs and contents are also broadcasted through various channels by satellite TV, HDTV, VOD and 3D TV. CATV cables do not only deliver cable TV, but also two-way broadband internet to each subscriber. All these contents require higher definition quality for better viewing experience.

The MMA-022020B is a 2 - 20GHz broadband MMIC medium power amplifier with 22.5 dBm output power. It is realized in advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF connections for broad range applications

Mini Circuits released the TSS-44+ monolithic amplifier operating from 22 to 43.5 GHz to be used in 5G applications. This surface mount, MMIC amplifier with shutdown feature fabricated using E-PHEMT technology and is a fully integrated 3-stage gain block up to 43.5 GHz with excellent active directivity.

Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package.

Northrop Grumman’s first three entries in their GaN MMIC Amplifiers have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market. 

Analog Devices offers the new HMC994APM5E GaAs pHEMT MMIC distributed wideband power amplifier that is ideal for test instrumentation, military, space, and fiber optics applications. The amplifier operates within the DC to 28 GHz frequency range, and provides 15 dB of gain, +29 dBm of saturated output power, and 25% PAE from a +10V supply.