MMIC Amplifiers


Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.
The MMA-022030B is a 2 - 20GHz broadband MMIC power amplifier with nearly 1W output power (P-2dB). It is realized in advanced AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF connections for broad range applications
Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity

Mini Circuits released the TSS-44+ monolithic amplifier operating from 22 to 43.5 GHz to be used in 5G applications. This surface mount, MMIC amplifier with shutdown feature fabricated using E-PHEMT technology and is a fully integrated 3-stage gain block up to 43.5 GHz with excellent active directivity.

High definition display such as full HD, Plasma TV and LED TV is currently expanding its market share in individual homes. HD quality programs and contents are also broadcasted through various channels by satellite TV, HDTV, VOD and 3D TV. CATV cables do not only deliver cable TV, but also two-way broadband internet to each subscriber. All these contents require higher definition quality for better viewing experience.

AE312 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
Recent improvements on the CMOS Silicon process introduced many one-chip solutions to the market. DSP, Analog/Digital converter, Digital/Analog converter, Up/Down converter, VCO and PLL Synthesizers are one of those one-chip solutions in the market today. However, CMOS has some drawbacks in higher power levels of 10dBm+ and having a high noise figure.
Sirenza Microdevices' SNA-600 is a high-performance GaAs Heterojunction Bipolar Transistor in die form. A Darlington configuration is utilized for broadband performance to 6.5 GHz.