XP1012 37 To 40 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s two stage 37.0-40.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +37.0 dBm
MMIC Wideband Amplifier (BGM1014 T/R)
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
XP1019-BD - 17.0 To 24.0 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s three stage 17.0 to 24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +27.0 dBm P1dB output compression point
across much of the band. The device also includes an on-chip temperature compensated output power detector.
MHA-333833A-Q5: 3300 To 3800 MHz Fully Matched MMIC Power Amplifier
The MMA-333833-Q5 is a high linearity InGaP HBT MMIC amplifier. It is in a low cost QFN 5X5mm Green Package. Applications include the driver and the output stage of the power amplifiers for WLAN and WiMax infrastructure base
stations and access points. The third order intercept performance of the MMA-333833A-Q5 is excellent and is typically 11 dB above the 1 dB gain compression point. It provides +33 dBm P1dB, +26 dBm Pave @2.5 % EVM under 802.16/64 QAM input signal, +44 dBm OIP3 and 25 dB gain.
37 To 40 GHz 1 W Power Amplifier (MMIC Die): AMMC-6442
Avago Technologies’ 37 - 40 GHz 1W Power Amplifier (MMIC Die): AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37 GHz and 40 GHz. Typical applications include point-to-point radio systems and millimeter – wave communications.
Broadband Fully Integrated Matched Low-Noise Amplifier MMIC: MGA-21108
The Avago MGA-21108 is a fully integrated GaAs Low Noise Amplifier, LNA, MMIC for use in the 1.5GHz to 8GHz band.
SNA-600: DC-6.5 GHz Cascadable GaAs MMIC Amplifier
Sirenza Microdevices' SNA-600 is a high-performance GaAs Heterojunction Bipolar Transistor in die form. A Darlington configuration is utilized for broadband performance to 6.5 GHz.
MMIC (75 ohm)
RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.
E-pHEMT MMIC - AE312
AE312 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
E-pHEMT MMIC For Femtocell, RF-Metering, RFID And Wi-Fi
Recent improvements on the CMOS Silicon process introduced many one-chip solutions to the market. DSP, Analog/Digital converter, Digital/Analog converter, Up/Down converter, VCO and PLL Synthesizers are one of those one-chip solutions in the market today. However, CMOS has some drawbacks in higher power levels of 10dBm+ and having a high noise figure.