Products and Services

1. DC-22 GHz Distributed Amplifier: CMD240C4 7/1/2020

   Qorvo offers the CMD240C4 wideband GaAs MMIC distributed amplifier housed in a leadless 4x4 mm surface mount package. The amplifier operates from DC to 22 GHz and is ideal for radar, space, satcom, test and measurement, and electronic warfare applications.

2. XP1005 Four Stage 35 to 43 GHz GaAs pHEMT MMIC Power Amplifier 5/27/2003
   Mimix Broadband, Inc.'s XP1005 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) four stage power amplifier...
3. 8.5 – 11 GHz, 4 W GaN Power Amplifier: QPA1022D 7/25/2019

   The Qorvo QPA1022D is a MMIC power amplifier operating from 8.5 – 11 GHz for radar, electronic warfare, and satellite communications applications. Fabricated on Qorvo’s production 0.25 um GaN on SiC process, the amplifier produces greater than 4 W of saturated output power and 24 dB of large-signal gain while achieving greater than 45% power-added efficiency.

4. CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier 6/7/2007
   Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity
5. 35 W, 2.0 – 6.0 GHz GaN MMIC Power Amplifier: CMPA2060035F 7/2/2020

   The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

6. High Gain GaAs MMIC Buffer Amplifiers 3/8/2007
   Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively
7. XP1001 26.0-40.0 GHz GaAs MMIC Power Amplifier 9/17/2003
   Mimix Broadband's two stage 26.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a typical third order intercept point of +34.0 dBm...
8. 13.75 - 14.5 GHz 40 Watt GaN Power Amplifier: QPA1314 10/10/2024

   QPA1314 is a high-power GaN MMIC amplifier for Satcom applications. The amplifier is packaged for easy integration and is ideal for both commercial and military markets.

9. 29MPA0373 26.0-31.0 GHz GaAs MMIC Power Amplifier 9/15/2004
   Mimix Broadband’s four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm.
10. 13.75 - 14.5 GHz Watt GaN Power Amplifier: QPA0016 10/10/2024

    The QPA0016 is a high-power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's 0.15 um GaN-on-SiC process.