Products and Services

  1. XL1010-QT: 20 To 38 GHz GaAs MMIC Low-Noise Amplifier 4/2/2008
    Mimix Broadband’s three stage 20.0-38.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 17.0 dB with a noise figure of 3.0 dB. The device comes in a RoHS compliant, 3x3mm QFN package and requires only a single positive bias supply.
  2. 13.75 - 14.5 GHz Watt GaN Power Amplifier: QPA0016 10/10/2024

    The QPA0016 is a high-power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's 0.15 um GaN-on-SiC process.

  3. CMM1100-QF: 2 To 18 GHz GaAs MMIC Low-Noise Amplifier 11/7/2007
    Mimix Broadband’s two stage 2 to 18 GHz GaAs MMIC low noise amplifier has a small signal gain of 15 dB with a noise figure of 3.8 dB across most of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  4. High Gain GaAs MMIC Buffer Amplifiers 3/8/2007
    Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively
  5. XP1005 Four Stage 35 to 43 GHz GaAs pHEMT MMIC Power Amplifier 5/27/2003
    Mimix Broadband, Inc.'s XP1005 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) four stage power amplifier...
  6. 14 To 16 GHz GaAs MMIC Power Amplifier - XP1058-BD 7/18/2008
    Mimix Broadband’s four stage 14.0-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 27.0 dB with +37.0 dBm saturated output power. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon optical lithography to ensure high repeatability and uniformity.
  7. XP1008 11 To 16 GHz GaAs MMIC Power Amplifier 6/7/2005
    Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  8. 29MPA0373 26.0-31.0 GHz GaAs MMIC Power Amplifier 9/15/2004
    Mimix Broadband’s four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm.
  9. 37.5 - 42.5 GHz 10 Watt GaN Amplifier: QPA4246D 2/23/2023

    The QPA4246D is a high-power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15).  It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band.

  10. DC-22 GHz Distributed Amplifier: CMD240C4 7/1/2020

    Qorvo offers the CMD240C4 wideband GaAs MMIC distributed amplifier housed in a leadless 4x4 mm surface mount package. The amplifier operates from DC to 22 GHz and is ideal for radar, space, satcom, test and measurement, and electronic warfare applications.