Products and Services

1. High Gain GaAs MMIC Buffer Amplifiers 3/8/2007
   Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively
2. 20 - 50GHz Surface Mount Integrated Active Doubler: IADA-2050PSM 9/9/2024

   The IADA-2050PSM is an integrated MMIC active doubler fabricated with GaAs Schottky diodes that operates over a guaranteed 10 to 25 GHz input frequency range or a doubled output frequency range of 20to 50 GHz.

3. 2-18 GHz Integrated Drive IQ Mixer: MMIQA-0218HPSM 2/21/2024

   The MMIQA-0218HPSM is a versatile, robust, and broadband IQ mixer with an integrated broadband LO driver amplifier. It is ideal for IQ, single sideband, and image reject mixing applications

4. 6 - 14 GHz (C, X, And Ku-Band) Driver Amplifier: QPL3050 9/13/2023

   The QPL3050 is a broadband MMIC driver amplifier housed in a leadless 3x3 mm plastic surface mount package.

5. XP1001 26.0-40.0 GHz GaAs MMIC Power Amplifier 9/17/2003
   Mimix Broadband's two stage 26.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a typical third order intercept point of +34.0 dBm...
6. DC-22 GHz Distributed Amplifier: CMD240C4 7/1/2020

   Qorvo offers the CMD240C4 wideband GaAs MMIC distributed amplifier housed in a leadless 4x4 mm surface mount package. The amplifier operates from DC to 22 GHz and is ideal for radar, space, satcom, test and measurement, and electronic warfare applications.

7. 13.75 - 14.5 GHz 40 Watt GaN Power Amplifier: QPA1314 10/10/2024

   QPA1314 is a high-power GaN MMIC amplifier for Satcom applications. The amplifier is packaged for easy integration and is ideal for both commercial and military markets.

8. 35 W, 2.0 – 6.0 GHz GaN MMIC Power Amplifier: CMPA2060035F 7/2/2020

   The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

9. CMM1434-SM - pHEMT GaAs MMIC Power Amplifier 3/8/2006
   The CMM1434-SM is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transmit subsystems designed for Ku-Band VSAT applications. The CMM1434-SM provides 31.0 dB linear gain and delivers 2.5 watts of output power at saturation operating from 13.50 to 14.50 GHz frequency...
10. XP1009 17 To 21 GHz GaAs MMIC Power Amplifier 6/7/2005
    Mimix Broadband’s two stage 17.0-21.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.0 dBm