Products and Services
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DC-22 GHz Distributed Amplifier: CMD240C4
7/1/2020
Qorvo offers the CMD240C4 wideband GaAs MMIC distributed amplifier housed in a leadless 4x4 mm surface mount package. The amplifier operates from DC to 22 GHz and is ideal for radar, space, satcom, test and measurement, and electronic warfare applications.
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1 - 22 GHz MMIC 2-Way High Isolation Power Divider/Power Splitter: MPBR-0122CSP3
9/4/2025
The MPBR-0122CSP3 is a compact, high-performance MMIC power divider/power splitter that operates across the 1 to 22 GHz frequency range.
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XP1008 11 To 16 GHz GaAs MMIC Power Amplifier
6/7/2005
Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
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CMM1100-QF: 2 To 18 GHz GaAs MMIC Low-Noise Amplifier
11/7/2007
Mimix Broadband’s two stage 2 to 18 GHz GaAs MMIC low noise amplifier has a small signal gain of 15 dB with a noise figure of 3.8 dB across most of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
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XP1001 26.0-40.0 GHz GaAs MMIC Power Amplifier
9/17/2003
Mimix Broadband's two stage 26.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a typical third order intercept point of +34.0 dBm...
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2-18 GHz Low Noise Amplifier With AGC: TGA2525
10/13/2020
The TriQuint TGA2525 is a compact LNA Gain Block MMIC with adjustable gain control (AGC). The LNA operates from 2-18 GHz and is designed using TriQuint’s proven standard 0.15 um Power pHEMT production process.
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35 W, 2.0 – 6.0 GHz GaN MMIC Power Amplifier: CMPA2060035F
7/2/2020
The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
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XL1010-QT: 20 To 38 GHz GaAs MMIC Low-Noise Amplifier
4/2/2008
Mimix Broadband’s three stage 20.0-38.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 17.0 dB with a noise figure of 3.0 dB. The device comes in a RoHS compliant, 3x3mm QFN package and requires only a single positive bias supply.
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8.5 - 10.5 GHz 30 Watt GaN Power Amplifier: QPA1111
10/15/2025
The QPA1111 is a high-power, packaged X-band MMIC amplifier fabricated using a 0.15 µm GaN-on-SiC process for reliable, high-efficiency performance in demanding applications.
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XP1012 37 To 40 GHz GaAs MMIC Power Amplifier
4/7/2005
Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm