Silicon MMIC Wideband Amplifier (UPC2712TB-E3-A)
NEC's UPC2711TB and UPC2712TB are Silicon MMIC
Wideband Amplifiers manufactured using NEC's 20 GHz fT
NESATTM III silicon bipolar process. These devices are designed
for use as buffer amps in DBS tuners. The UPC2711/
12TB are pin compatible and have comparable performance
as the larger UPC2711/12T, so they are suitable for use as a
replacement to help reduce system size. These IC's are
housed in a 6 pin super minimold or SOT-363 package.
MMIC (75 ohm)
RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.
XP1010 21 To 24 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s two stage 21.0-24.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +39.0 dBm. This
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
SNA-400: DC-10 GHz Cascadable GaAs MMIC Amplifier
Sirenza Microdevices' SNA-400 is a GaAs monolithic broadband amplifier in die form. This amplifier provides 13dB of gain when biased at 65mA and 5.0V.
22 – 43.5 GHz Monolithic Amplifier: TSS-44+
Mini Circuits released the TSS-44+ monolithic amplifier operating from 22 to 43.5 GHz to be used in 5G applications. This surface mount, MMIC amplifier with shutdown feature fabricated using E-PHEMT technology and is a fully integrated 3-stage gain block up to 43.5 GHz with excellent active directivity.
GaN MMIC Amplifiers/Transistors
Northrop Grumman’s first three entries in their GaN MMIC Amplifiers have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market.
SNA-100: DC-10 GHz Cascadable GaAs MMIC Amplifier
Sirenza Microdevices' SNA-100 is a GaAs monolithic broadband amplifier (MMIC) in die form...
MMIC Amplifiers For WiMAX Applications
Microwave Technology, Inc (MwT), an IXYS Corporation, announces a new family of MMICs for WiMAX(802.16 d/e), WiFi, and wireless infrastructure applications
High Gain GaAs MMIC Buffer Amplifiers
Mimix Broadband, Inc. provides two gallium arsenide (GaAs)
monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively
E-pHEMT MMIC - AE312
AE312 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.