Products and Services

  1. DC-22 GHz Distributed Amplifier: CMD240C4 7/1/2020

    Qorvo offers the CMD240C4 wideband GaAs MMIC distributed amplifier housed in a leadless 4x4 mm surface mount package. The amplifier operates from DC to 22 GHz and is ideal for radar, space, satcom, test and measurement, and electronic warfare applications.

  2. XP1012 37 To 40 GHz GaAs MMIC Power Amplifier 4/7/2005
    Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm
  3. 2-18 GHz Integrated Drive IQ Mixer: MMIQA-0218HPSM 2/21/2024

    The MMIQA-0218HPSM is a versatile, robust, and broadband IQ mixer with an integrated broadband LO driver amplifier. It is ideal for IQ, single sideband, and image reject mixing applications

  4. 6 - 14 GHz (C, X, And Ku-Band) Driver Amplifier: QPL3050 9/13/2023

    The QPL3050 is a broadband MMIC driver amplifier housed in a leadless 3x3 mm plastic surface mount package.

  5. XP1009 17 To 21 GHz GaAs MMIC Power Amplifier 6/7/2005
    Mimix Broadband’s two stage 17.0-21.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.0 dBm
  6. 13.75 - 14.5 GHz Watt GaN Power Amplifier: QPA0016 10/10/2024

    The QPA0016 is a high-power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's 0.15 um GaN-on-SiC process.

  7. High Gain GaAs MMIC Buffer Amplifiers 3/8/2007
    Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively
  8. CMM1100-QF: 2 To 18 GHz GaAs MMIC Low-Noise Amplifier 11/7/2007
    Mimix Broadband’s two stage 2 to 18 GHz GaAs MMIC low noise amplifier has a small signal gain of 15 dB with a noise figure of 3.8 dB across most of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  9. 35 W, 2.0 – 6.0 GHz GaN MMIC Power Amplifier: CMPA2060035F 7/2/2020

    The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.