Products and Services

  1. XP1011 36 To 40 GHz GaAs MMIC Power Amplifier 5/7/2005
    roadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm
  2. 22 – 43.5 GHz Monolithic Amplifier: TSS-44+ 6/14/2019

    Mini Circuits released the TSS-44+ monolithic amplifier operating from 22 to 43.5 GHz to be used in 5G applications. This surface mount, MMIC amplifier with shutdown feature fabricated using E-PHEMT technology and is a fully integrated 3-stage gain block up to 43.5 GHz with excellent active directivity.

  3. E-pHEMT MMIC - AE314 6/29/2009

    AE314 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.

  4. XP1008 11 To 16 GHz GaAs MMIC Power Amplifier 6/7/2005
    Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  5. GaN MMIC Power Amplifiers 7/17/2013

    These GaN MMIC power amplifiers are ideal for applications involving test instrumentation, general communications, and general radar. Two models are featured below, a 25 Watt PA covering the 2-6 GHz frequency range, and an 8 Watt PA covering the 2-20 GHz frequency range.

  6. 0.5 – 8.0 GHz Low Noise MMIC Amplifier: CMA-83LN+ 1/16/2019

    Mini Circuits offers the CMA-83LN+ low noise MMIC amplifier operating from 0.5 to 8.0 GHz for sensitive, high-dynamic range receiver applications. The amplifier offers flat gain and a P1dB of 20.3 dBm at 2 GHz with a noise figure of 1.3 dB. It operates on a single 5 V or 6 V supply and is well matched f to 50 ohms.

  7. 75 W, 2.7 - 3.5 GHz GaN MMIC Power Amplifier: CMPA2735075F 9/4/2019

    The CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for civil and military pulsed radar applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

  8. 33-45 GHz GaAs MMIC Low Noise Amplifier 7/17/2013

    This low noise amplifier (LNA) features a small size and low power consumption, making it ideal for point to point/multipoint radios, military and space communications, and other EW and communications systems.

  9. CMM1100-QF: 2 To 18 GHz GaAs MMIC Low-Noise Amplifier 11/7/2007
    Mimix Broadband’s two stage 2 to 18 GHz GaAs MMIC low noise amplifier has a small signal gain of 15 dB with a noise figure of 3.8 dB across most of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  10. 5.7 – 7 GHz, 50 Watt GaN Power Amplifier: QPA1017D 1/15/2020

    The QPA1017D is Qorvo’s MMIC power amplifier operating from 5.7 – 7.0 GHz for C-band radar and satellite communications applications. Fabricated on Qorvo’s production 0.15 um GaN on SiC process, the amplifier produces 50 W of saturated output power with 21 dB of large-signal gain while achieving greater than 40% power-added efficiency.