Products and Services

  1. 0.5 – 8.0 GHz Low Noise MMIC Amplifier: CMA-83LN+ 1/16/2019

    Mini Circuits offers the CMA-83LN+ low noise MMIC amplifier operating from 0.5 to 8.0 GHz for sensitive, high-dynamic range receiver applications. The amplifier offers flat gain and a P1dB of 20.3 dBm at 2 GHz with a noise figure of 1.3 dB. It operates on a single 5 V or 6 V supply and is well matched f to 50 ohms.

  2. E-pHEMT MMIC - AE312 6/29/2009
    AE312 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
  3. 6-14 GHz Broadband MMIC Driver Amplifier: CMD158P3 4/6/2013

    Custom MMIC’s CMD158P3 is a broadband MMIC driver amplifier covering the 6-14 GHz frequency range. It features high output power, low current consumption, a single supply voltage of +5.0 V @ 95 mA, and a Pb-free RoHs compliant QFN package.

  4. 13.75 - 14.5 GHz 8 Watt GaN Power Amplifier: QPA0015 10/10/2024

    Qorvo's QPA0015 is a powerful Ku-Band MMIC amplifier fabricated using their advanced GaN-on-SiC process. Designed for Satcom applications, it delivers 3 Watts of linear power with excellent intermodulation distortion performance.

  5. 2-18 GHz Integrated Drive IQ Mixer: MMIQA-0218HPSM 2/21/2024

    The MMIQA-0218HPSM is a versatile, robust, and broadband IQ mixer with an integrated broadband LO driver amplifier. It is ideal for IQ, single sideband, and image reject mixing applications

  6. 75 W, 2.7 - 3.5 GHz GaN MMIC Power Amplifier: CMPA2735075F 9/4/2019

    The CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for civil and military pulsed radar applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

  7. XP1003 27.0 To 35.0 GHz GaAs MMIC Power Amplifier 12/13/2002
    Mimix Broadband's two stage 27.0-35.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a typical third order intercept point of +34.0 dBm...
  8. XP1010 21 To 24 GHz GaAs MMIC Power Amplifier 5/7/2005
    Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  9. 29MPA0373 26.0-31.0 GHz GaAs MMIC Power Amplifier 9/15/2004
    Mimix Broadband’s four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm.
  10. 5.7 – 7 GHz, 50 Watt GaN Power Amplifier: QPA1017D 1/15/2020

    The QPA1017D is Qorvo’s MMIC power amplifier operating from 5.7 – 7.0 GHz for C-band radar and satellite communications applications. Fabricated on Qorvo’s production 0.15 um GaN on SiC process, the amplifier produces 50 W of saturated output power with 21 dB of large-signal gain while achieving greater than 40% power-added efficiency.