GaN MMIC Power Amplifiers
These GaN MMIC power amplifiers are ideal for applications involving test instrumentation, general communications, and general radar. Two models are featured below, a 25 Watt PA covering the 2-6 GHz frequency range, and an 8 Watt PA covering the 2-20 GHz frequency range.
SNA-600: DC-6.5 GHz Cascadable GaAs MMIC Amplifier
Sirenza Microdevices' SNA-600 is a high-performance GaAs Heterojunction Bipolar Transistor in die form. A Darlington configuration is utilized for broadband performance to 6.5 GHz.
800-2500MHz MMIC Wideband Amplifier (ZAMP002H6TA)
The ZAMP002 is an low current high performance RF
amplifier designed for L band and IF applications.
Although the ZAMP002 has been designed primarily
for DBS applications the ZAMP002 is capable of
extending to frequencies of 2.5GHz so it has a good fit
with various applications. An additional benefit of the
ZAMP002 is it’s rising gain characteristic, this has been
designed to counteract the gain losses found at the
MMIC (75 ohm)
RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.
E-pHEMT MMIC (50 ohm) Product Line
The E-pHEMT MMIC (50 ohm) Product Line can be used in applications including Cellular/GSM, PCS, DCS, W-CDMA, Wibro, WiMax, WiFi, Tetra, CATV, Satellite system, RFID, Femtocell, and Multi-metering.
Silicon MMIC Amplifier (BGA2001 T/R)
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin dual-emitter SOT343R
60 GHz Power Amplifier: HHPAV-433
The HHPAV-433 Power Amplifier covers the frequency range from 59.5 to 60.5 GHz and is usable over the range of 58 to 64 GHz. The amplifier has an output power of +28.5 Psat and 18 dB gain. MMIC technology is employed for high reliability and repeatability employing one die. A single +6.0V bias is used to power up the amplifier. An onboard voltage regulator and bias sequencing circuitry provide the proper biasing for the unit.
CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier
Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band.
This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability
37 To 40 GHz 1 W Power Amplifier (MMIC Die): AMMC-6442
Avago Technologies’ 37 - 40 GHz 1W Power Amplifier (MMIC Die): AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37 GHz and 40 GHz. Typical applications include point-to-point radio systems and millimeter – wave communications.
DC-28 GHz GaAs pHEMT MMIC Power Amplifier: HMC994APM5E
Analog Devices offers the new HMC994APM5E GaAs pHEMT MMIC distributed wideband power amplifier that is ideal for test instrumentation, military, space, and fiber optics applications. The amplifier operates within the DC to 28 GHz frequency range, and provides 15 dB of gain, +29 dBm of saturated output power, and 25% PAE from a +10V supply.