Products and Services

  1. MHA-495433: 4.9 To 5.4 GHz 2W InGaP HBT MMIC Power Amplifier 7/2/2008
    The MHA-495433 is a high-performance reliable MMIC power amplifier utilizing high-reliability, high-breakdown voltage InGaP HBT technology. Power MMIC is ideally suited for driver or output stages in wireless applications such as 802.16 WiMAX, 802.11 WLAN & ISM, point-to-point radios & Telecom Infrastructure. MHA-495433 HBT MMIC Power Amplifier Chip has 50-ohm fully-matched output, pre-matched input, on-chip DC blocking capacitor, active bias and power detector built into the chip.
  2. Silicon MMIC Amplifier (BGA2001 T/R) 1/21/2009
    Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.
  3. CMM1434-SM - pHEMT GaAs MMIC Power Amplifier 3/8/2006
    The CMM1434-SM is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transmit subsystems designed for Ku-Band VSAT applications. The CMM1434-SM provides 31.0 dB linear gain and delivers 2.5 watts of output power at saturation operating from 13.50 to 14.50 GHz frequency...
  4. GaN MMIC Power Amplifier: HMC7149 11/20/2013

    The HMC7149 is 10 watt GaN MMIC amplifier covering the 6-18 GHz frequency range. It’s ideal for applications involving general communications, test instrumentation, and radar.

  5. High Gain GaAs MMIC Buffer Amplifiers 3/8/2007
    Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively
  6. CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier 6/7/2007
    Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity
  7. MMICs 4/10/2008
    REMEC D&S designs high-performance, cost-effective MMICs, including low-noise and high-power amplifiers, switches, phase shifters, detectors, and attenuators from RF, microwave, and millimeter wave (mmWave) bands for next generation space, missile defense, communication, and unmanned aerial vehicle applications.
  8. 22 – 43.5 GHz Monolithic Amplifier: TSS-44+ 6/14/2019

    Mini Circuits released the TSS-44+ monolithic amplifier operating from 22 to 43.5 GHz to be used in 5G applications. This surface mount, MMIC amplifier with shutdown feature fabricated using E-PHEMT technology and is a fully integrated 3-stage gain block up to 43.5 GHz with excellent active directivity.

  9. 35 W, 2.0 – 6.0 GHz GaN MMIC Power Amplifier: CMPA2060035F 7/2/2020

    The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

  10. 800-2500MHz MMIC Wideband Amplifier (ZAMP002H6TA) 1/21/2009
    The ZAMP002 is an low current high performance RF amplifier designed for L band and IF applications. Although the ZAMP002 has been designed primarily for DBS applications the ZAMP002 is capable of extending to frequencies of 2.5GHz so it has a good fit with various applications. An additional benefit of the ZAMP002 is it’s rising gain characteristic, this has been designed to counteract the gain losses found at the higher frequencies.