MMIC (75 ohm)
RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.
MMA-495930-Q4 MMIC Amplifier
The MMA495930-Q4 is a high linearity MMIC amplifier utilizing MwT’s proprietary linear device technology. Packaged in low cost QFN 4X4mm Green Package, this product is specifically designed as a driver or final power amplifier stage for 802.16 applications in the 4.9-5.9GHz bands.
XP1009 17 To 21 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s two stage 17.0-21.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +38.0 dBm
E-pHEMT MMIC For Femtocell, RF-Metering, RFID And Wi-Fi
Recent improvements on the CMOS Silicon process introduced many one-chip solutions to the market. DSP, Analog/Digital converter, Digital/Analog converter, Up/Down converter, VCO and PLL Synthesizers are one of those one-chip solutions in the market today. However, CMOS has some drawbacks in higher power levels of 10dBm+ and having a high noise figure.
800-2500MHz MMIC Wideband Amplifier (ZAMP002H6TA)
The ZAMP002 is an low current high performance RF
amplifier designed for L band and IF applications.
Although the ZAMP002 has been designed primarily
for DBS applications the ZAMP002 is capable of
extending to frequencies of 2.5GHz so it has a good fit
with various applications. An additional benefit of the
ZAMP002 is it’s rising gain characteristic, this has been
designed to counteract the gain losses found at the
REMEC D&S designs high-performance, cost-effective MMICs, including low-noise and high-power amplifiers, switches, phase shifters, detectors, and attenuators from RF, microwave, and millimeter wave (mmWave) bands for next generation space, missile defense, communication, and unmanned aerial vehicle applications.
SNA-300: DC-3 GHz Cascadable GaAs MMIC Amplifier
Sirenza Microdevies' SNA-300 is a GaAs monolithic broadband amplifier in die form. at 1950 MHz, this amplifier provides 22dB of gain when biased at 35mA.
GaN MMIC Amplifiers/Transistors
Northrop Grumman’s first three entries in their GaN MMIC Amplifiers have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market.
37 To 40 GHz 1 W Power Amplifier (MMIC Die): AMMC-6442
Avago Technologies’ 37 - 40 GHz 1W Power Amplifier (MMIC Die): AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37 GHz and 40 GHz. Typical applications include point-to-point radio systems and millimeter – wave communications.
MHA-495433: 4.9 To 5.4 GHz 2W InGaP HBT MMIC Power Amplifier
The MHA-495433 is a high-performance reliable MMIC power amplifier utilizing high-reliability, high-breakdown voltage InGaP HBT technology. Power MMIC is ideally suited for driver or output stages in wireless applications such as 802.16 WiMAX, 802.11 WLAN & ISM, point-to-point radios & Telecom Infrastructure. MHA-495433 HBT MMIC Power Amplifier Chip has 50-ohm fully-matched output, pre-matched input, on-chip DC blocking capacitor, active bias and power detector built into the chip.