13.5 To 16.0 GHz GaAs MMIC Power Amplifier - XP1057-BD
Mimix Broadband’s three stage 13.5-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 17.0 dB with +48.0 dBm output third order intercept.
MMA-061827: 6 To 18 GHz Power Amplifier MMIC Chip
The MMA-061827 is a 6-18 GHz GaAs power amplifier MMIC chip. Small signal gain is typically 8.0 dB across band. In a balanced configuration, input and output VSWR are better than 1.5:1 with a typical P1B more than 29 dBm, and a Psat of
30 dBm. The typical performance is shown below. MMA-061827 can be used in broadband EW and defense applications. Hi-rel and space screening are available.
XP1003 27.0 To 35.0 GHz GaAs MMIC Power Amplifier
Mimix Broadband's two stage 27.0-35.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a typical third order intercept point of +34.0 dBm...
XP1009 17 To 21 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s two stage 17.0-21.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +38.0 dBm
DC-28 GHz GaAs pHEMT MMIC Power Amplifier: HMC994APM5E
Analog Devices offers the new HMC994APM5E GaAs pHEMT MMIC distributed wideband power amplifier that is ideal for test instrumentation, military, space, and fiber optics applications. The amplifier operates within the DC to 28 GHz frequency range, and provides 15 dB of gain, +29 dBm of saturated output power, and 25% PAE from a +10V supply.
SNA-600: DC-6.5 GHz Cascadable GaAs MMIC Amplifier
Sirenza Microdevices' SNA-600 is a high-performance GaAs Heterojunction Bipolar Transistor in die form. A Darlington configuration is utilized for broadband performance to 6.5 GHz.
CMM1100-QF: 2 To 18 GHz GaAs MMIC Low-Noise Amplifier
Mimix Broadband’s two stage 2 to 18 GHz GaAs MMIC low noise amplifier has a small signal gain of 15 dB with a noise figure of 3.8 dB across most of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high
repeatability and uniformity
E-pHEMT MMIC - AE314
AE314 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
REMEC D&S designs high-performance, cost-effective MMICs, including low-noise and high-power amplifiers, switches, phase shifters, detectors, and attenuators from RF, microwave, and millimeter wave (mmWave) bands for next generation space, missile defense, communication, and unmanned aerial vehicle applications.
XP1019-BD - 17.0 To 24.0 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s three stage 17.0 to 24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +27.0 dBm P1dB output compression point
across much of the band. The device also includes an on-chip temperature compensated output power detector.