Products and Services

  1. 13.75 - 14.5 GHz Watt GaN Power Amplifier: QPA0016 10/10/2024

    The QPA0016 is a high-power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's 0.15 um GaN-on-SiC process.

  2. 5.7 – 7 GHz, 50 Watt GaN Power Amplifier: QPA1017D 1/15/2020

    The QPA1017D is Qorvo’s MMIC power amplifier operating from 5.7 – 7.0 GHz for C-band radar and satellite communications applications. Fabricated on Qorvo’s production 0.15 um GaN on SiC process, the amplifier produces 50 W of saturated output power with 21 dB of large-signal gain while achieving greater than 40% power-added efficiency.

  3. 20 - 50GHz Surface Mount Integrated Active Doubler: IADA-2050PSM 9/9/2024

    The IADA-2050PSM is an integrated MMIC active doubler fabricated with GaAs Schottky diodes that operates over a guaranteed 10 to 25 GHz input frequency range or a doubled output frequency range of 20to 50 GHz.

  4. 2-18 GHz Integrated Drive IQ Mixer: MMIQA-0218HPSM 2/21/2024

    The MMIQA-0218HPSM is a versatile, robust, and broadband IQ mixer with an integrated broadband LO driver amplifier. It is ideal for IQ, single sideband, and image reject mixing applications

  5. XP1005 Four Stage 35 to 43 GHz GaAs pHEMT MMIC Power Amplifier 5/27/2003
    Mimix Broadband, Inc.'s XP1005 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) four stage power amplifier...
  6. CMM1100-QF: 2 To 18 GHz GaAs MMIC Low-Noise Amplifier 11/7/2007
    Mimix Broadband’s two stage 2 to 18 GHz GaAs MMIC low noise amplifier has a small signal gain of 15 dB with a noise figure of 3.8 dB across most of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  7. XP1010 21 To 24 GHz GaAs MMIC Power Amplifier 5/7/2005
    Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  8. 2-18 GHz Low Noise Amplifier With AGC: TGA2525 10/13/2020

    The TriQuint TGA2525 is a compact LNA Gain Block MMIC with adjustable gain control (AGC). The LNA operates from 2-18 GHz and is designed using TriQuint’s proven standard 0.15 um Power pHEMT production process.

  9. XL1010-QT: 20 To 38 GHz GaAs MMIC Low-Noise Amplifier 4/2/2008
    Mimix Broadband’s three stage 20.0-38.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 17.0 dB with a noise figure of 3.0 dB. The device comes in a RoHS compliant, 3x3mm QFN package and requires only a single positive bias supply.
  10. 37.5 - 42.5 GHz 10 Watt GaN Amplifier: QPA4246D 2/23/2023

    The QPA4246D is a high-power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15).  It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band.