Silicon MMIC Amplifier (BGA2003 T/R)
Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package.
SBW-5089 DC-8 GHz Cascadable InGaP/GaAs MMIC Amplifier
Sirenza Microdevices’ SBW-5089 is a high performance
InGaP/GaAs Heterojunction Bipolar Transistor MMIC
MMIC (75 ohm)
RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.
E-pHEMT MMIC - AE314
AE314 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
E-pHEMT MMIC (50 ohm) Product Line
The E-pHEMT MMIC (50 ohm) Product Line can be used in applications including Cellular/GSM, PCS, DCS, W-CDMA, Wibro, WiMax, WiFi, Tetra, CATV, Satellite system, RFID, Femtocell, and Multi-metering.
SNA-500: DC-3 GHz Cascadable GaAs MMIC Amplifier
Sirenza Microdevices' SNA-500 is a GaAs monolithic broadband amplifier in die form. This amplifier provides 19dB of gain when biased at 65mA and 5.0V.
SNA-200 DC-6.5 GHz Cascadable GaAs MMIC Amplifier
Sirenza Microdevices’ SNA-200 is a GaAs monolithic
broadband amplifier (MMIC) in die form. At 1950 MHz, this
amplifier provides 16dB of gain when biased at 50mA.
60 GHz Power Amplifier: HHPAV-433
The HHPAV-433 Power Amplifier covers the frequency range from 59.5 to 60.5 GHz and is usable over the range of 58 to 64 GHz. The amplifier has an output power of +28.5 Psat and 18 dB gain. MMIC technology is employed for high reliability and repeatability employing one die. A single +6.0V bias is used to power up the amplifier. An onboard voltage regulator and bias sequencing circuitry provide the proper biasing for the unit.
MMA-121630: 12 To 16 GHz Fully Matched MMIC Power Amplifier
The MMA-121630 is a 12-16 GHz GaAs MMIC amplifier. Small signal gain is typically 26.0 dB across band. It typically
provides 31 dBm power at P-1dB. This part can be used in VSAT, point to point,and defense applications, Hi-rel and
space screening is available.
33-45 GHz GaAs MMIC Low Noise Amplifier
This low noise amplifier (LNA) features a small size and low power consumption, making it ideal for point to point/multipoint radios, military and space communications, and other EW and communications systems.