Product/Service

High Gain GaAs MMIC Buffer Amplifiers

High Gain GaAs MMIC Buffer Amplifiers
Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively

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Datasheet: XB1007-BD GaAs MMIC Buffer Amplifiers
Datasheet: XB1008-BD GaAs MMIC Buffer Amplifiers

Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively.

Both devices deliver 20 dBm P1dB compression point and 30 dBm OIP3. The XB1007-BD has a noise figure of 4.5 dB and 23 dB small signal gain; the XB1008-BD has a noise figure of 5.5 dB and 18 dB small signal gain.

These buffer amplifiers are ideal for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.

Packaged versions of the XB1007-BD and XB1008-BD in fully molded, plastic 3x3 QFN packages will be available in the near future for surface mount applications.

Click Here To Download:
Datasheet: XB1007-BD GaAs MMIC Buffer Amplifiers
Datasheet: XB1008-BD GaAs MMIC Buffer Amplifiers