Current Probes

Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.

Models HCPL-0560 and HCPL-0561 are dual-channel, bi-directional optoisolators

Qorvo’s QPA4501 is an integrated 2-stage Power Amplifier (PA) module designed to cover the frequency range of 4.4 to 5.0 GHz. This device is optimized for 5G massive MIMO, W-CDMA/LTE, macro and micro cell base station, active antenna, and other general purpose applications.

The VF315 surface-mount oscillator features a frequency operating range of 1.5 to 70 MHz and is available for 5 V or 3.3 V applications

Better phase noise is often sought in today’s most advanced systems. Our Series PM Amplifiers achieve ultra-low phase noise with a combo of design techniques, material selection, and in-house testing.

The AMP20191 Solid-State High-Power Pulse Amplifier is purpose-built for demanding EMI/RFI, HIRF, and laboratory environments requiring exceptional pulse performance in a compact, rack-mounted form factor.

Model NEZ5964-35E is a 35-W power GaAs MESFET designed to provide output power for C-Band VSAT and telecom transmitters

The TGL2217 and TGL2217-SM are Qorvo’s new wideband GaAs VPIN limiters designed to protect sensitive receive channel components against high power incident signals. These limiters do not require DC bias, and are able to achieve low insertion loss in a small form factor, allowing for simple system integration with minimal impact on performance.