Current Probes

A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals

Exodus' AMP2099C is a rugged Ultra-Broadband SSPA designed for all applications. Frequency band of 500MHz-6.0GHz, 150W Minimum and 53dB gain.  Excellent power/gain flatness as compared to other amplifiers. Forward/Reflected power monitoring, VSWR, voltage/current/temperature sensing for superb reliability and ruggedness. The nominal weight is 23kg in a compact 4U chassis 7”H x 19”W x 22”D.

Trust dB Control with your high-power solutions for radar, ECM and EW threat simulation systems. Our TWTAs, MPMs, and power supplies can be custom-configured for mission-critical ground-based, shipborne and high altitude manned/unmanned airborne platforms. 

The Qorvo QPF4532 is an integrated front end module (FEM) designed for Wi-Fi 6 (802.11ax) systems. The compact form factor and integrated matching minimizes layout area in the application.

The AMP1002BLW is a solid-state high-power amplifier with a Class AB linear GaN design, offering instantaneous wide bandwidth suitable for various modulation standards.

The QPF4006 from Qorvo is a multi-function GaN MMIC front-end module (FEM) ideally utilized for 39 GHz phased array 5G base stations and terminals. This device operates over the 37 to 40.5 GHz frequency range, and combines a low noise, high linearity LNA, a low insertion loss, high isolation TR switch, and a high gain, high efficiency multi-stage PA.

The AK-571-4 Horn Antenna kit is the newest member of A.H. Systems family of antenna kits. This Antenna Kit provides a convenient solution for increased frequency requirements from 700 MHz to 40 GHz. As specifications include higher test frequency requirements so does the need for an accurate antenna solution. To help minimize any downtime the customer may be experiencing during testing we provide next-day, on-time delivery.

The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.