Silicon MMIC Amplifier (BGA2003 T/R)
Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package.
Custom MMIC has developed two new LNA MMIC that operate in the 6-18 GHz frequency and feature a 1.5 dB noise figure
Ultra High Dynamic Range MMIC Amplifier - PHA-1+
The Mini-Circuits PHA-1+ Ultra High Dynamic Range MMIC Amplifier supports low intermodulation amplification over the broad frequency range of 50 MHz to 6 GHz. This design provides a unique combination of high output IP3 (typically +42 dBm) while maintaining a noise figure less than 3 dB up to 4 GHz and typical gain of 14 dB at 2 GHz.
REMEC D&S designs high-performance, cost-effective MMICs, including low-noise and high-power amplifiers, switches, phase shifters, detectors, and attenuators from RF, microwave, and millimeter wave (mmWave) bands for next generation space, missile defense, communication, and unmanned aerial vehicle applications.
MMA-121630: 12 To 16 GHz Fully Matched MMIC Power Amplifier
The MMA-121630 is a 12-16 GHz GaAs MMIC amplifier. Small signal gain is typically 26.0 dB across band. It typically
provides 31 dBm power at P-1dB. This part can be used in VSAT, point to point,and defense applications, Hi-rel and
space screening is available.
CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier
Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band.
This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability
XP1008 11 To 16 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s three stage 11.0-16.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +38.5 dBm. This
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
SNA-300: DC-3 GHz Cascadable GaAs MMIC Amplifier
Sirenza Microdevies' SNA-300 is a GaAs monolithic broadband amplifier in die form. at 1950 MHz, this amplifier provides 22dB of gain when biased at 35mA.
GaN MMIC Amplifiers/Transistors
Northrop Grumman’s first three entries in their GaN MMIC Amplifiers have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market.
800-2500MHz MMIC Wideband Amplifier (ZAMP002H6TA)
The ZAMP002 is an low current high performance RF
amplifier designed for L band and IF applications.
Although the ZAMP002 has been designed primarily
for DBS applications the ZAMP002 is capable of
extending to frequencies of 2.5GHz so it has a good fit
with various applications. An additional benefit of the
ZAMP002 is it’s rising gain characteristic, this has been
designed to counteract the gain losses found at the