Products and Services

11. 8.5 – 11 GHz, 4 W GaN Power Amplifier: QPA1022D 7/25/2019

    The Qorvo QPA1022D is a MMIC power amplifier operating from 8.5 – 11 GHz for radar, electronic warfare, and satellite communications applications. Fabricated on Qorvo’s production 0.25 um GaN on SiC process, the amplifier produces greater than 4 W of saturated output power and 24 dB of large-signal gain while achieving greater than 45% power-added efficiency.

12. E-pHEMT MMIC - AE314 6/29/2009

    AE314 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.

13. 35 W, 2.0 – 6.0 GHz GaN MMIC Power Amplifier: CMPA2060035F 7/2/2020

    The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

14. 33-45 GHz GaAs MMIC Low Noise Amplifier 7/17/2013

    This low noise amplifier (LNA) features a small size and low power consumption, making it ideal for point to point/multipoint radios, military and space communications, and other EW and communications systems.

15. XP1003 27.0 To 35.0 GHz GaAs MMIC Power Amplifier 12/13/2002
    Mimix Broadband's two stage 27.0-35.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a typical third order intercept point of +34.0 dBm...
16. XP1010 21 To 24 GHz GaAs MMIC Power Amplifier 5/7/2005
    Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
17. Silicon MMIC Amplifier (BGA2001 T/R) 1/21/2009
    Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.
18. XP1005 Four Stage 35 to 43 GHz GaAs pHEMT MMIC Power Amplifier 5/27/2003
    Mimix Broadband, Inc.'s XP1005 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) four stage power amplifier...
19. GaN MMIC Power Amplifier: HMC7149 11/20/2013

    The HMC7149 is 10 watt GaN MMIC amplifier covering the 6-18 GHz frequency range. It’s ideal for applications involving general communications, test instrumentation, and radar.

20. Wideband GaAs MMIC Distributed Amplifier: CMD173 11/15/2012

    This RF amplifier operates in the DC-20 GHz frequency range and features small die size, a low noise figure, and low current consumption. This amplifier is ideal for microwave radio and VSAT, telecom infrastructure, test instrumentation, and military and space applications.