Products and Services

  1. XP1008 11 To 16 GHz GaAs MMIC Power Amplifier 6/7/2005
    Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  2. 35 W, 2.0 – 6.0 GHz GaN MMIC Power Amplifier: CMPA2060035F 7/2/2020

    The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

  3. 2-18 GHz Low Noise Amplifier With AGC: TGA2525 10/13/2020

    The TriQuint TGA2525 is a compact LNA Gain Block MMIC with adjustable gain control (AGC). The LNA operates from 2-18 GHz and is designed using TriQuint’s proven standard 0.15 um Power pHEMT production process.

  4. 6 - 14 GHz (C, X, And Ku-Band) Driver Amplifier: QPL3050 9/13/2023

    The QPL3050 is a broadband MMIC driver amplifier housed in a leadless 3x3 mm plastic surface mount package.

  5. 5.7 – 7 GHz, 50 Watt GaN Power Amplifier: QPA1017D 1/15/2020

    The QPA1017D is Qorvo’s MMIC power amplifier operating from 5.7 – 7.0 GHz for C-band radar and satellite communications applications. Fabricated on Qorvo’s production 0.15 um GaN on SiC process, the amplifier produces 50 W of saturated output power with 21 dB of large-signal gain while achieving greater than 40% power-added efficiency.

  6. XP1011 36 To 40 GHz GaAs MMIC Power Amplifier 5/7/2005
    roadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm
  7. 20 - 50GHz Surface Mount Integrated Active Doubler: IADA-2050PSM 9/9/2024

    The IADA-2050PSM is an integrated MMIC active doubler fabricated with GaAs Schottky diodes that operates over a guaranteed 10 to 25 GHz input frequency range or a doubled output frequency range of 20to 50 GHz.

  8. XP1010 21 To 24 GHz GaAs MMIC Power Amplifier 5/7/2005
    Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  9. XL1010-QT: 20 To 38 GHz GaAs MMIC Low-Noise Amplifier 4/2/2008
    Mimix Broadband’s three stage 20.0-38.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 17.0 dB with a noise figure of 3.0 dB. The device comes in a RoHS compliant, 3x3mm QFN package and requires only a single positive bias supply.
  10. 14 To 16 GHz GaAs MMIC Power Amplifier - XP1058-BD 7/18/2008
    Mimix Broadband’s four stage 14.0-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 27.0 dB with +37.0 dBm saturated output power. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon optical lithography to ensure high repeatability and uniformity.