Products and Services
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CMM1434-SM - pHEMT GaAs MMIC Power Amplifier
3/8/2006
The CMM1434-SM is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transmit subsystems designed for Ku-Band VSAT applications. The CMM1434-SM provides 31.0 dB linear gain and delivers 2.5 watts of output power at saturation operating from 13.50 to 14.50 GHz frequency...
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33-45 GHz GaAs MMIC Low Noise Amplifier
7/17/2013
This low noise amplifier (LNA) features a small size and low power consumption, making it ideal for point to point/multipoint radios, military and space communications, and other EW and communications systems.
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MHA-333833A-Q5: 3300 To 3800 MHz Fully Matched MMIC Power Amplifier
7/2/2008
The MMA-333833-Q5 is a high linearity InGaP HBT MMIC amplifier. It is in a low cost QFN 5X5mm Green Package. Applications include the driver and the output stage of the power amplifiers for WLAN and WiMax infrastructure base stations and access points. The third order intercept performance of the MMA-333833A-Q5 is excellent and is typically 11 dB above the 1 dB gain compression point. It provides +33 dBm P1dB, +26 dBm Pave @2.5 % EVM under 802.16/64 QAM input signal, +44 dBm OIP3 and 25 dB gain.
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Millimeter Wave Products
5/22/2007
Northrop Grumman ST Foundry Services & MMIC Products offers low noise amplifiers, power amplifiers, switches, multipliers, mixers and attenuators for millimeter-wave applications.
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XP1019-BD - 17.0 To 24.0 GHz GaAs MMIC Power Amplifier
5/11/2007
Mimix Broadband’s three stage 17.0 to 24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +27.0 dBm P1dB output compression point across much of the band. The device also includes an on-chip temperature compensated output power detector.
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13.75 - 14.5 GHz Watt GaN Power Amplifier: QPA0016
10/10/2024
The QPA0016 is a high-power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's 0.15 um GaN-on-SiC process.
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XP1009 17 To 21 GHz GaAs MMIC Power Amplifier
6/7/2005
Mimix Broadband’s two stage 17.0-21.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.0 dBm
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MMIC (75 ohm)
12/29/2008
RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.
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MMA-022020B Broadband MMIC Power Amplifier
4/19/2007
The MMA-022020B is a 2 - 20GHz broadband MMIC medium power amplifier with 22.5 dBm output power. It is realized in advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF connections for broad range applications
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37.5 - 42.5 GHz 10 Watt GaN Amplifier: QPA4246D
2/23/2023
The QPA4246D is a high-power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band.
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