Products and Services
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13.5 To 16.0 GHz GaAs MMIC Power Amplifier - XP1057-BD
7/18/2008
Mimix Broadband’s three stage 13.5-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 17.0 dB with +48.0 dBm output third order intercept.
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14 To 16 GHz GaAs MMIC Power Amplifier - XP1058-BD
7/18/2008
Mimix Broadband’s four stage 14.0-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 27.0 dB with +37.0 dBm saturated output power. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon optical lithography to ensure high repeatability and uniformity.
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13.75 - 14.5 GHz 8 Watt GaN Power Amplifier: QPA0015
10/10/2024
Qorvo's QPA0015 is a powerful Ku-Band MMIC amplifier fabricated using their advanced GaN-on-SiC process. Designed for Satcom applications, it delivers 3 Watts of linear power with excellent intermodulation distortion performance.
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5.7 – 7 GHz, 50 Watt GaN Power Amplifier: QPA1017D
1/15/2020
The QPA1017D is Qorvo’s MMIC power amplifier operating from 5.7 – 7.0 GHz for C-band radar and satellite communications applications. Fabricated on Qorvo’s production 0.15 um GaN on SiC process, the amplifier produces 50 W of saturated output power with 21 dB of large-signal gain while achieving greater than 40% power-added efficiency.
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2-18 GHz Low Noise Amplifier With AGC: TGA2525
10/13/2020
The TriQuint TGA2525 is a compact LNA Gain Block MMIC with adjustable gain control (AGC). The LNA operates from 2-18 GHz and is designed using TriQuint’s proven standard 0.15 um Power pHEMT production process.
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XP1008 11 To 16 GHz GaAs MMIC Power Amplifier
6/7/2005
Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
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CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier
6/7/2007
Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity
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8.5 - 10.5 GHz 30 Watt GaN Power Amplifier: QPA1111
10/15/2025
The QPA1111 is a high-power, packaged X-band MMIC amplifier fabricated using a 0.15 µm GaN-on-SiC process for reliable, high-efficiency performance in demanding applications.
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XP1011 36 To 40 GHz GaAs MMIC Power Amplifier
5/7/2005
roadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm
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XP1001 26.0-40.0 GHz GaAs MMIC Power Amplifier
9/17/2003
Mimix Broadband's two stage 26.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a typical third order intercept point of +34.0 dBm...