Products and Services

  1. 37.5 - 42.5 GHz 10 Watt GaN Amplifier: QPA4246D 2/23/2023

    The QPA4246D is a high-power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15).  It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band.

  2. 13.75 - 14.5 GHz Watt GaN Power Amplifier: QPA0016 10/10/2024

    The QPA0016 is a high-power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's 0.15 um GaN-on-SiC process.

  3. 29MPA0373 26.0-31.0 GHz GaAs MMIC Power Amplifier 9/15/2004
    Mimix Broadband’s four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm.
  4. DC-22 GHz Distributed Amplifier: CMD240C4 7/1/2020

    Qorvo offers the CMD240C4 wideband GaAs MMIC distributed amplifier housed in a leadless 4x4 mm surface mount package. The amplifier operates from DC to 22 GHz and is ideal for radar, space, satcom, test and measurement, and electronic warfare applications.

  5. CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier 6/7/2007
    Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity
  6. 35 W, 2.0 – 6.0 GHz GaN MMIC Power Amplifier: CMPA2060035F 7/2/2020

    The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

  7. XP1011 36 To 40 GHz GaAs MMIC Power Amplifier 5/7/2005
    roadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm
  8. 14 To 16 GHz GaAs MMIC Power Amplifier - XP1058-BD 7/18/2008
    Mimix Broadband’s four stage 14.0-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 27.0 dB with +37.0 dBm saturated output power. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon optical lithography to ensure high repeatability and uniformity.
  9. 13.75 - 14.5 GHz 40 Watt GaN Power Amplifier: QPA1314 10/10/2024

    QPA1314 is a high-power GaN MMIC amplifier for Satcom applications. The amplifier is packaged for easy integration and is ideal for both commercial and military markets.

  10. XP1012 37 To 40 GHz GaAs MMIC Power Amplifier 4/7/2005
    Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm