Products and Services
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GaN MMIC Power Amplifier: HMC7149
11/20/2013
The HMC7149 is 10 watt GaN MMIC amplifier covering the 6-18 GHz frequency range. It’s ideal for applications involving general communications, test instrumentation, and radar.
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E-pHEMT MMIC - AE312
6/29/2009
AE312 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
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Wideband GaAs MMIC Distributed Amplifier: CMD173
11/15/2012
This RF amplifier operates in the DC-20 GHz frequency range and features small die size, a low noise figure, and low current consumption. This amplifier is ideal for microwave radio and VSAT, telecom infrastructure, test instrumentation, and military and space applications.
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6 - 14 GHz (C, X, And Ku-Band) Driver Amplifier: QPL3050
9/13/2023
The QPL3050 is a broadband MMIC driver amplifier housed in a leadless 3x3 mm plastic surface mount package.
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XP1001 26.0-40.0 GHz GaAs MMIC Power Amplifier
9/17/2003
Mimix Broadband's two stage 26.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a typical third order intercept point of +34.0 dBm...
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75 W, 2.7 - 3.5 GHz GaN MMIC Power Amplifier: CMPA2735075F
9/4/2019
The CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for civil and military pulsed radar applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
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5.7 – 7 GHz, 50 Watt GaN Power Amplifier: QPA1017D
1/15/2020
The QPA1017D is Qorvo’s MMIC power amplifier operating from 5.7 – 7.0 GHz for C-band radar and satellite communications applications. Fabricated on Qorvo’s production 0.15 um GaN on SiC process, the amplifier produces 50 W of saturated output power with 21 dB of large-signal gain while achieving greater than 40% power-added efficiency.
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XP1010 21 To 24 GHz GaAs MMIC Power Amplifier
5/7/2005
Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
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MMICs
4/10/2008
REMEC D&S designs high-performance, cost-effective MMICs, including low-noise and high-power amplifiers, switches, phase shifters, detectors, and attenuators from RF, microwave, and millimeter wave (mmWave) bands for next generation space, missile defense, communication, and unmanned aerial vehicle applications.
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XP1019-BD - 17.0 To 24.0 GHz GaAs MMIC Power Amplifier
5/11/2007
Mimix Broadband’s three stage 17.0 to 24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +27.0 dBm P1dB output compression point across much of the band. The device also includes an on-chip temperature compensated output power detector.