Datasheet | December 13, 2016

DC – 4 GHz GaN RF Transistors: QPD1009 Datasheet

Source: Qorvo

The QDP1009 is a discrete GaN on SiC HEMT operating from the DC to 4 GHz frequency range. It is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications. For more specifications, features, and parameters for the QPD1009, download the datasheet.