transistors-products

  1. Rugged LDMOS RF Power Transistors for Harsh Conditions 6/29/2012

    These rugged LDMOS (laterally diffused metal oxide semiconductor) transistors operate over a wide 1 MHz to 2 GHz frequency range. They’re ideal for applications subject to harsh conditions like HF-UHF transmitters and transceivers, white space data transceivers, defense and aerospace systems, television transmitters, test equipment, and radar systems

  2. 10500 Avionics Transistor 8/12/2005
    APT RF’s Avionics Transistor, 500W, Class C, common base power transistor is designed for Mode-S systems covering 1030-1090 MHz...
  3. GaN Wideband Transistor: MAGX-011086 4/20/2015

    The MAGX-011086 is a wideband transistor optimized for operations in DC - 6 GHz. This GaN HEMT is made with operating output power levels of 4W (36 dBm) in an industry standard, low inductance, and a surface mount QFN package.

  4. L-Band Transistors 2/15/2007
    Integra’s lineup of L-band silicon bipolar transistors boasts industry leading performance. These common base devices offer the highest pulsed RF power, highest gain and smallest footprint available
  5. RF Power Transistor 2/10/2000
    The PTF 10149 RF power transistor is intended for use in applications in the 920-960 MHz band
  6. 3400 – 3600 MHz Thermally-Enhanced High-Power RF GaN On SiC HEMT: GTRA364002FC 9/17/2018

    Wolfspeed’s new GTRA364002FC is a thermally-enhanced high-power RF GaN on SiC HEMT designed for multi-standard cellular power amplifier and other wireless infrastructure applications in the 3400 – 3600 MHz frequency range. The device features an output power of 400 W, 13 dB gain, and operation at 48 V.

  7. Broadband General Purpose GaN Transistor: IGN0160UM10 5/19/2016

    Integra Technologies offers the IGN0160UM10 broadband GaN transistor for use in general purpose applications. The transistor operates throughout the 0.100 through 6.00 GHz frequency range, and is designed to utilize GaN on SiC HEMT technology.

  8. RF Transistors 3/19/1999
    Wideband RF transistors are optimized for amplification of DAB and DAR signals
  9. HF50-250 Bipolar Power Transistor 7/28/2009
    The HF50-250 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness and reliability.
  10. MDS500L Avionics Bipolar Transistor 5/25/2006
    The MDS500L is a Vcc = 50V, class C bipolar transistor specifically designed to handle the heavy pulsing of the Mode-S ELM format (32uS on / 18uS off x 48pulses burst). The transistor provides greater than 500W of output power with an input power of 70W...