transistors-products
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VHF Transistors
2/15/2007
Integra’s lineup of VHF - VDMOS silicon MOSFET power transistors boasts performance unmatched by any other vendor. These common source power transistor devices offer the highest pulsed RF power and smallest circuit footprint available in any VHF - VDMOS silicon MOSFET high power transistors.
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GaN on SiC Power Transistors
7/29/2015
Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.
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GaN On SiC RF Transistor: QPD1028
4/13/2022
The QPD1028 is a 750W discrete GaN on SiC HEMT that operates from 1.2 to 1.4 GHz, providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency.
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L-Band Transistors
2/15/2007
Integra’s lineup of L-band silicon bipolar transistors boasts industry leading performance. These common base devices offer the highest pulsed RF power, highest gain and smallest footprint available
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GaN HEMT RF Power Transistors
9/26/2017
Wolfspeed, a Cree Company, introduces a new series of GaN HEMT RF power transistors designed to enable broadband power amplifiers for commercial and military wireless communications and radar applications. These power devices are operate from a 28 V rail, and are developed using Wolfspeed’s proven 0.25 µm GaN-on-SiC process.
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Power Transistors And Modules For S-Band Radar
12/16/2008
Microsemi’s new S-Band power modules provide a complete design solution, combining two Microsemi transistors in hermetically sealed packages, with input/output circuitry matched to 50 ohm. Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.
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RF Transistor
12/28/1998
Designed for CDMA and TDMA applications in the PCS band, model PTF10112 is an RF transistor that features gold top metal and gold bond wires
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800-1000 MHz 12W P-Band Radar Transistor
3/2/2001
The IB0810M12 is a 12 watt, common base silicon bipolar transistor intended to operate in class C mode over the instantaneous operating frequency band of 870-990 MHz
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Rugged LDMOS RF Power Transistors for Harsh Conditions
6/29/2012
These rugged LDMOS (laterally diffused metal oxide semiconductor) transistors operate over a wide 1 MHz to 2 GHz frequency range. They’re ideal for applications subject to harsh conditions like HF-UHF transmitters and transceivers, white space data transceivers, defense and aerospace systems, television transmitters, test equipment, and radar systems
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500 W GaN/SiC Long-Pulse L-Band Transistor: IGN1214L500B
9/6/2017
Integra Technologies introduces the IGN1214L500B long-pulse transistor with GaN on SiC HEMT technology, operating at 380 W for applications from 1.2 – 1.4 GHz. The transistor exhibits 15.5 dB typical gain, and 65% efficiency, at 2 milliseconds and 20% pulse conditions. It is specified for use under Class AB operation.