transistors-products

1. RF Transistor for Secondary Surveillance Radar Aviation: 1011GN-700ELM
   9/5/2012

   This common source class AB, GaN on SiC HEMT RF power transistor has been specifically designed for Mode-S ELM applications, and secondary surveillance radar (SSR) applications. SSR allows air traffic controllers to identify, track, and measure an airplane’s location.

2. High-Efficiency Power Transistor: RF3932
   11/30/2010
   The RF3932 High-Efficiency Power Transistor is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN)semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design.
3. HF12-125 Bipolar Power Transistor
   1/30/2009
   The HF12-125 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. The HF12-series products utilize the unique Spectrum Devices’ Bipolar process which offers a 67% improvement in collector-base breakdown voltage, enhancing reliability while maintaining RF performance.
4. DME800 Avionics Transistor
   8/12/2005
   APT-RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for broadband DME systems covering 1025-1150 MHz...
5. Broadband General Purpose GaN Transistor: IGN0160UM10
   5/19/2016

   Integra Technologies offers the IGN0160UM10 broadband GaN transistor for use in general purpose applications. The transistor operates throughout the 0.100 through 6.00 GHz frequency range, and is designed to utilize GaN on SiC HEMT technology.

6. Mobility Transistors
   4/14/1999
   A family of low-noise pseudomorphic high-electron mobility transistors (PHEMT) uses the company’s latest-generation gallium arsenide (GaAs) fabrication process
7. 50-Ohm GaN RF Input-Matched Transistor: QPD1000
   12/13/2016

   Qorvo offers a wideband, 28 V, 50-Ohm input-matched RF transistor that is ideal for commercial and defense communications applications. This device has an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

8. 10500 Avionics Transistor
   8/12/2005
   APT RF’s Avionics Transistor, 500W, Class C, common base power transistor is designed for Mode-S systems covering 1030-1090 MHz...
9. 380 W, 1210-1400 MHz GaN/SiC Transistor: IGN1214M380C
   12/2/2016

   Integra Technologies introduces the IGN1214M380C GaN/SiC transistor, exhibiting 20 dB gain, 54% efficiency at 150 us-10% pulse conditions, and operation in the 1210-1400 MHz frequency range. These devices are 100% tested for large signal parameters.

10. C-Band GaN 4.0 kW Pulsed Solid State Power Amplifier Module: VSC3645
    5/17/2016

    CPI’s Beverly Microwave Division presents the VSC3645 GaN 4.0 kW pulsed solid state power amplifier module operating in the C-band (5.2 – 5.9 GHz). This high efficiency, high power, compact amplifier is highly efficient, easy to maintain, and is designed to easily create high power C-band radar transmitters.