transistors-products

  1. GaN On SiC RF Transistor: QPD1028 4/13/2022

    The QPD1028 is a 750W discrete GaN on SiC HEMT that operates from 1.2 to 1.4 GHz, providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency.

  2. RF Power Transistor Series 8/18/2000
    The PD5xxxx series of radio-frequency (RF) power transistors is aimed at wireless base station and mobile radio applications where high volume...
  3. GaN RF Input-Matched Transistor: QPD1025L 11/3/2022

    The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space.

  4. DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010 4/28/2016

    The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

  5. 500 W GaN RF IMFET: QPD1003 12/13/2016

    Qorvo offers a 500 W, internally matched discrete GaN on SiC HEMT operating in the 1.2 to 1.4 GHz range. This device is fully matched to 50 Ohm, can support pulsed and linear operations, and is ideal for civilian and military radar applications.

  6. 100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures 5/16/2016

    Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.

  7. 50 V GaN Transistors 12/13/2016

    Qorvo offers a family of GaN transistors designed to serve a wide range of defense and commercial applications, including types of radar, communications, avionics, and test instrumentation. These transistors have an operating voltage of 50 V, are CW and pulsed capable, unmatched, and are lead-free and ROHS compliant.

  8. Discrete Transistor: QPD2025D 7/20/2022

    Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. 

  9. 1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025 2/13/2018

    Qorvo offers the QPD1025 discrete GaN on SiC RF transistor that is ideal for IFF transponder and avionics applications. This device features over 1800 W output power, 65 V operating voltage, and a specific frequency range of 1.0 to 1.1 GHz.

  10. 50-Ohm GaN RF Input-Matched Transistor: QPD1000 12/13/2016

    Qorvo offers a wideband, 28 V, 50-Ohm input-matched RF transistor that is ideal for commercial and defense communications applications. This device has an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.