Product/Service

DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor: QPD1022

Source: Qorvo

DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor: QPD1022

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.

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The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz. It is lead free, ROHS compliant, and available with evaluation boards on request.

Additional QPD1022 features include:

  • Frequency: DC to 12 GHz
  • Output Power (P3dB): 11 W
  • Linear Gain: 24.0 dB
  • Operating Voltage: 32 V
  • Low thermal resistance package
  • CW and Pulse capable

For more specifications on the QPD1022, download the datasheet.

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