Datasheet | June 6, 2017

DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor: QPD1022 Datasheet

Source: Qorvo

The QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT featuring a single stage unmatched power amplifier transistor in a 3 x 3 mm, over-molded surface-mount QFN plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz. For more specifications on the QPD1022, download the datasheet.

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