transistors-products

  1. S-Band Medical Transistors 2/15/2007
    Integra’s lineup of S-band silicon bipolar power transistors with the world’s highest power output, are unmatched by any other vendor. These transistors are designed to address the most stringent requirements for medical, civilian and military radar, including ground, naval, and airborne mechanically and electronically scanned antennas
  2. DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010 4/28/2016

    The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

  3. RF Power Transistor: QPD0020 2/28/2022

    The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations.

  4. RF Power Transistor: 250 Watt, 50 Volt HF50-250 4/26/2010
    The HF50-250 RF Power transistor is designed for the 50V, 2-30 MHz RF Amplifier, RF Power Supply and RF Power Generator markets. Operating at 30 MHz and 50 Volts DC, the device will provide a minimum Power Gain of 14.5 dB, with the minimum Output Power specified at 250 Watts, PEP.
  5. GaN Wideband Transistor: MAGX-011086 4/20/2015

    The MAGX-011086 is a wideband transistor optimized for operations in DC - 6 GHz. This GaN HEMT is made with operating output power levels of 4W (36 dBm) in an industry standard, low inductance, and a surface mount QFN package.

  6. HF12-125 Bipolar Power Transistor 1/30/2009
    The HF12-125 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. The HF12-series products utilize the unique Spectrum Devices’ Bipolar process which offers a 67% improvement in collector-base breakdown voltage, enhancing reliability while maintaining RF performance.
  7. 800-1000 MHz 12W P-Band Radar Transistor 3/2/2001
    The IB0810M12 is a 12 watt, common base silicon bipolar transistor intended to operate in class C mode over the instantaneous operating frequency band of 870-990 MHz
  8. 35 W, 2.0 – 6.0 GHz GaN MMIC Power Amplifier: CMPA2060035F 7/2/2020

    The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

  9. RF Power Transistors for Aerospace and Defense 1/31/2011
    600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz 1090 MHz range.
    Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances, designed for broadband operation (1030 MHz to 1090 MHz). It has easy power control, excellent ruggedness, excellent thermal stability, high efficiency, high flexibility with respect to pulse formats, Integrated ESD protection and Internally matched for ease of use.
  10. 400 W LDMOS Transistor For S-band Radar: BLS9G2731L-400U 8/6/2019

    RFMW introduces the BLS9G2731L-400U from Ampleon as a 400 W LDMOS power transistor ideally designed for use in S-band applications in the 2700 MHz to 31 MHz frequency range. With 400 W pulsed power capability in class-AB circuits, the transistor offers 47% efficiency with up to 13 dB of gain.