transistors-products

  1. RF Transistor: 2729GN-500V 5/7/2013

    Microsemi’s 2729GN-500V RF transistor is based on GaN on SiC technologies and targeted at high-power air traffic control airport surveillance radar applications. The 2729GN-500V delivers unparalleled performance of 500W of peak power with 12 dB of power gain and 53% drain efficiency over band 2.7 to 2.9 GHz band.

  2. MDS1100 Avionics Transistor 8/12/2005
    APT-RF’s Avionics Transistor, Mode-S 1100W, Class C, common base power transistor is designed for standard Mode-S 128uS pulsing at 1030 MHz...
  3. Avionics Transistors 2/15/2007
    Integra’s lineup of silicon bipolar and MOSFET power transistors for avionics applications boasts performance unavailable from any competing vendor. These products are designed to address the most stringent requirements for TCAS, MODE-S, MODE S-ELM, IFF, ADS-B, UAT, JTIDS, DME, and TACAN
  4. Discrete Transistor: QPD2025D 7/20/2022

    Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. 

  5. Wideband RF Transistors 3/11/1999
    The PTF 10049 and PTF 10037 families of wideband, high-power, RF transistors are designed for use in the amplification of UHF frequencies
  6. X-Band, GaN/SiC Power Transistor: IGT1112M90 5/14/2019

    Integra Technologies offers the IGT1112M90 X-band, GaN/SiC power transistor designed to meet the requirements of radar systems operating in the X-band. Operating in the 10.8 – 11.8 GHz frequency range with under 150µs and 10% duty cycle pulse conditions, the device supplies a minimum of 90 W of peak output power, with an associated 9 dB of gain and 35% efficiency.

  7. RF Power Transistors: S-Band 7/28/2011
    Microsemi has leveraged its industry-leading expertise in S-band RF power transistors to create a family of GaN-on-SiC solutions that are tailored to support the requirements of next-generation systems requiring higher power, better efficiency, and wider bandwidth than is possible using conventional silicon or SiC process technologies. For applications operating in frequency bands up to 20GHz, the wide bandgap material properties of GaN-on-SiC technology enable smaller systems with improved voltage, gain, broadband performance, drain efficiency, and long-term reliability.
  8. NPN Wideband Silicon RF Transistor: BFU630F 3/1/2011
    NXP offers a complete portfolio of SiGe:C wideband transistors for maximum performance and design flexibility, and the BFU630F product is a good example of it. This BFU630F wideband transistor delivers extremely low noise and high maximum gain, making it ideal for sensitive RF receivers in high-performance applications such as next-generation cell phones. At the same time, the high operating frequencies are ideal for use in microwave applications in the 10 to 30 GHz range, such as satellite TV receivers and automotive collision avoidance radar. NXP’s innovative silicon-germanium-carbon (SiGe:C) BiCMOS processes enable this outstanding performance, combining the performance of gallium-arsenide (GaAs) technologies with the reliability of silicon-based processes.
  9. L-Band Transistors 2/15/2007
    Integra’s lineup of L-band silicon bipolar transistors boasts industry leading performance. These common base devices offer the highest pulsed RF power, highest gain and smallest footprint available
  10. DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010 4/28/2016

    The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.