transistors-products

1. 25W, 30-1200 MHz, GaN RF Input-Matched Transistor: QPD1004A 5/26/2026

   QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz.

2. 1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025 2/13/2018

   Qorvo offers the QPD1025 discrete GaN on SiC RF transistor that is ideal for IFF transponder and avionics applications. This device features over 1800 W output power, 65 V operating voltage, and a specific frequency range of 1.0 to 1.1 GHz.

3. 50 V GaN Transistors 12/13/2016

   Qorvo offers a family of GaN transistors designed to serve a wide range of defense and commercial applications, including types of radar, communications, avionics, and test instrumentation. These transistors have an operating voltage of 50 V, are CW and pulsed capable, unmatched, and are lead-free and ROHS compliant.

4. 1.2 - 1.4 GHz, 375 Watt, 65 Volt , GaN On SiC RF Transistor: QPD1425L 7/13/2023

   The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency.

5. GaN RF Input-Matched Transistor: QPD1025L 11/3/2022

   The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space.

6. 35 W, 2.0 – 6.0 GHz GaN MMIC Power Amplifier: CMPA2060035F 7/2/2020

   The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

7. 50-Ohm GaN RF Input-Matched Transistor: QPD1000 12/13/2016

   Qorvo offers a wideband, 28 V, 50-Ohm input-matched RF transistor that is ideal for commercial and defense communications applications. This device has an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

8. 1800 W, 65 V, 1.0 – 1.1 GHz Highest Power GaN Transistor On The Market: QPD1025L 6/29/2018

   Qorvo offers the 1800 W, 65 V, 1.0 – 1.1 GHz QPD1025L as the highest GaN transistor on the market. This discrete GaN on SiC HEMT has a package that features input pre-match resulting in ease of external board match and saved board space.

9. RF Power Transistor Series 8/18/2000
   The PD5xxxx series of radio-frequency (RF) power transistors is aimed at wireless base station and mobile radio applications where high volume...
10. DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor: QPD1022 6/6/2017

    The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.