transistors-products

1. DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor: QPD1022 6/6/2017

   The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.

2. Discrete Transistor: QPD2025D 7/20/2022

   Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. 

3. 1.2 - 1.4 GHz, 375 Watt, 65 Volt , GaN On SiC RF Transistor: QPD1425L 7/13/2023

   The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency.

4. 1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025 2/13/2018

   Qorvo offers the QPD1025 discrete GaN on SiC RF transistor that is ideal for IFF transponder and avionics applications. This device features over 1800 W output power, 65 V operating voltage, and a specific frequency range of 1.0 to 1.1 GHz.

5. 100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures 5/16/2016

   Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.

6. RF Power Transistor: QPD0020 2/28/2022

   The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations.

7. GaN RF Input-Matched Transistor: QPD1025L 11/3/2022

   The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space.

8. RF Transistors 3/19/1999
   Wideband RF transistors are optimized for amplification of DAB and DAR signals
9. 1800 W, 65 V, 1.0 – 1.1 GHz Highest Power GaN Transistor On The Market: QPD1025L 6/29/2018

   Qorvo offers the 1800 W, 65 V, 1.0 – 1.1 GHz QPD1025L as the highest GaN transistor on the market. This discrete GaN on SiC HEMT has a package that features input pre-match resulting in ease of external board match and saved board space.

10. GaN on SiC Power Transistors 7/29/2015

    Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.