Wideband RF transistors are optimized for amplification of DAB and DAR signals. Supporting digital and analog modulations, the devices are gold-metalized, silicon, LMDOS FETs that cover 1.41.6 GHz. Model PTF10125 features a push-pull configuration with intermodulation distortion of better than –35 dB for PEP levels up to 135 W. It features 13-dB linear gain and saturated power capability of 200 W.
Ericsson Components, RF Power Products, 675 Jarvis Rd., Morgan Hill, CA 95037. Tel: 408-778-9434; Fax: 408-779-3108.