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1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025

Source: Qorvo

1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025

Qorvo offers the QPD1025 discrete GaN on SiC RF transistor that is ideal for IFF transponder and avionics applications. This device features over 1800 W output power, 65 V operating voltage, and a specific frequency range of 1.0 to 1.1 GHz.

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The input matched HEMT is in an industry standard air cavity package and can support both CW and pulsed operations. All Qorvo devices are lead-free and ROHS compliant.

Additional features include:

  • Frequency range: 1.0 to 1.1 GHz
  • Linear gain: 22.5 dB typical at 1 GHz load pull
  • Typical PAE3dB: 77.2% at 1 GHz
  • Operating voltage: 65 V
  • Available evaluation boards

Download the datasheet for more information on QPD1025 transistor.

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