transistors-products

  1. 0405-500L: UHF Transistor For Long Pulsed Radar Applications
    12/3/2007
    The 0405-500L is an internally-matched, common emitter transistor capable of providing 500 Watts of pulsed RF output power in a push-pull configuration at one thousand and one hundred microsecond pulse width twenty–six percent duty factor across the frequency band 400 to 450 MHz
  2. 500 W GaN RF IMFET: QPD1003
    12/13/2016

    Qorvo offers a 500 W, internally matched discrete GaN on SiC HEMT operating in the 1.2 to 1.4 GHz range. This device is fully matched to 50 Ohm, can support pulsed and linear operations, and is ideal for civilian and military radar applications.

  3. 1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025
    2/13/2018

    Qorvo offers the QPD1025 discrete GaN on SiC RF transistor that is ideal for IFF transponder and avionics applications. This device features over 1800 W output power, 65 V operating voltage, and a specific frequency range of 1.0 to 1.1 GHz.

  4. HF28-Series Bipolar Power Transistors
    1/20/2009
    Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 28 volt products offer drop-in equivalence to other manufacturers.
  5. GaN Wideband Transistor: MAGX-011086
    4/20/2015

    The MAGX-011086 is a wideband transistor optimized for operations in DC - 6 GHz. This GaN HEMT is made with operating output power levels of 4W (36 dBm) in an industry standard, low inductance, and a surface mount QFN package.

  6. 100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures
    5/16/2016

    Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.

  7. HF12-Series Bipolar Power Transistors
    1/20/2009
    Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 12 volt products offer drop-in equivalence to other manufacturers.
  8. 800-1000 MHz 12W P-Band Radar Transistor
    3/2/2001
    The IB0810M12 is a 12 watt, common base silicon bipolar transistor intended to operate in class C mode over the instantaneous operating frequency band of 870-990 MHz
  9. GaN on SiC Power Transistors
    7/29/2015

    Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.

  10. TAN350 Avionics Transistor
    9/29/2005
    APT-RF’s Avionics Transistor, 350W, Class C, common base power transistor is designed for broadband TACAN systems covering 960-1215 MHz with 10uS, 10% pulsing at Vcc = 50V