transistors-products

  1. High Power 1214-370M Transistor
    9/26/2005
    This transistor provides RF pulsed Peak Power of 370 Watts at 330 us, 10%.
  2. RF Power Transistor: 250 Watt, 50 Volt HF50-250
    4/26/2010
    The HF50-250 RF Power transistor is designed for the 50V, 2-30 MHz RF Amplifier, RF Power Supply and RF Power Generator markets. Operating at 30 MHz and 50 Volts DC, the device will provide a minimum Power Gain of 14.5 dB, with the minimum Output Power specified at 250 Watts, PEP.
  3. GaN S-Band 50Ω Transistor: IGT2731L120
    7/27/2016

    Integra Technologies introduces IGT2731L120 with GaN on SiC HEMT technology, exhibiting 13 dB typical gain, and 50% drain efficiency. This device is 100% high power RF tested in a 50Ω RF test fixture.

  4. HF28-Series Bipolar Power Transistors
    1/20/2009
    Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 28 volt products offer drop-in equivalence to other manufacturers.
  5. TAN350 Avionics Transistor
    9/29/2005
    APT-RF’s Avionics Transistor, 350W, Class C, common base power transistor is designed for broadband TACAN systems covering 960-1215 MHz with 10uS, 10% pulsing at Vcc = 50V
  6. GaN Technology For Wireless Base Stations
    10/20/2017

    The new MAGb series from MACOM is a family of the industry’s first commercial base station-optimized GaN transistors designed to achieve excellent efficiency, bandwidth, and power gain. It is also the broadest portfolio available of RF to light solutions for wireless network infrastructures.

  7. L-Band Transistors
    2/15/2007
    Integra’s lineup of L-band silicon bipolar transistors boasts industry leading performance. These common base devices offer the highest pulsed RF power, highest gain and smallest footprint available
  8. MDS500L Avionics Bipolar Transistor
    5/25/2006
    The MDS500L is a Vcc = 50V, class C bipolar transistor specifically designed to handle the heavy pulsing of the Mode-S ELM format (32uS on / 18uS off x 48pulses burst). The transistor provides greater than 500W of output power with an input power of 70W...
  9. RF Transistor: 2729GN-500V
    5/7/2013

    Microsemi’s 2729GN-500V RF transistor is based on GaN on SiC technologies and targeted at high-power air traffic control airport surveillance radar applications. The 2729GN-500V delivers unparalleled performance of 500W of peak power with 12 dB of power gain and 53% drain efficiency over band 2.7 to 2.9 GHz band.

  10. Avionics Pulsed Power RF Transistors
    5/10/2007
    Avionics Pulsed Power RF Transistors, M/A-COM MAPRST1030-1KS, a new 1,000 W peak, class C bipolar transistor designed for 1030 MHz pulsed avionics applications