transistors-products

11. Broadband General Purpose GaN Transistor: IGN0160UM10 5/19/2016

    Integra Technologies offers the IGN0160UM10 broadband GaN transistor for use in general purpose applications. The transistor operates throughout the 0.100 through 6.00 GHz frequency range, and is designed to utilize GaN on SiC HEMT technology.

12. GaN S-Band 50Ω Transistor: IGT2731L120 7/27/2016

    Integra Technologies introduces IGT2731L120 with GaN on SiC HEMT technology, exhibiting 13 dB typical gain, and 50% drain efficiency. This device is 100% high power RF tested in a 50Ω RF test fixture.

13. 5200 - 5900 MHz GaN MMIC For Radar Power Amplifiers: CMPA5259050F 12/3/2018

    The CMPA5259050F gallium nitride (GaN) high electron mobility transistor (HEMT) from Cree is designed to provide high efficiency, high gain, and wide bandwidth capabilities in applications operating in the 5.2 – 5.9 GHz frequency range. Supplied in a ceramic/metal flange package, the amplifier also operates at 50 Watts and 28 volts.

14. 10500 Avionics Transistor 8/12/2005
    APT RF’s Avionics Transistor, 500W, Class C, common base power transistor is designed for Mode-S systems covering 1030-1090 MHz...
15. TAN350 Avionics Transistor 9/29/2005
    APT-RF’s Avionics Transistor, 350W, Class C, common base power transistor is designed for broadband TACAN systems covering 960-1215 MHz with 10uS, 10% pulsing at Vcc = 50V
16. UHF-Band RF Power MOSFET Transistor 2/6/2007
    This high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1 to 500 MHz. Operating at CW conditions, this dual MOSFET device supplies a minimum of 200 watts of power across the instantaneous operating bandwidth of 1 to 500 MHz
17. ARF477FL -- RF Power MOSFET Transistors 6/29/2009
    The new ARF477FL is a 500V (BVdss) push-pull matched pair transistor product providing up to100MHz operation in the ISM Band for industrial, scientific and medical applications including semiconductor capital equipment and MRI systems...
18. 0405-500L: UHF Transistor For Long Pulsed Radar Applications 12/3/2007
    The 0405-500L is an internally-matched, common emitter transistor capable of providing 500 Watts of pulsed RF output power in a push-pull configuration at one thousand and one hundred microsecond pulse width twenty–six percent duty factor across the frequency band 400 to 450 MHz
19. TCS800 Avionics Transistor 9/29/2005
    APT RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for TCAS systems covering 1030-1090 MHz with 32uS, 1% pulsing at Vcc = 50V
20. 400 W LDMOS Transistor For S-band Radar: BLS9G2731L-400U 8/6/2019

    RFMW introduces the BLS9G2731L-400U from Ampleon as a 400 W LDMOS power transistor ideally designed for use in S-band applications in the 2700 MHz to 31 MHz frequency range. With 400 W pulsed power capability in class-AB circuits, the transistor offers 47% efficiency with up to 13 dB of gain.