transistors-products
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DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor: QPD1022
6/6/2017
The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.
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GaN MMIC Amplifiers/Transistors
10/31/2012
Northrop Grumman’s first three entries in their GaN MMIC Amplifiers have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market.
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DME800 Avionics Transistor
8/12/2005
APT-RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for broadband DME systems covering 1025-1150 MHz...
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UHF Transistors
2/15/2007
ntegra’s lineup of UHF silicon bipolar and MOSFET high power transistors boasts industry leading performance. These common source and common base power devices offer the highest pulsed RF power and smallest circuit footprint available in any UHF silicon bipolar and MOSFET high power transistor
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Mobility Transistors
4/14/1999
A family of low-noise pseudomorphic high-electron mobility transistors (PHEMT) uses the company’s latest-generation gallium arsenide (GaAs) fabrication process
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GaN Technology For Wireless Base Stations
10/20/2017
The new MAGb series from MACOM is a family of the industry’s first commercial base station-optimized GaN transistors designed to achieve excellent efficiency, bandwidth, and power gain. It is also the broadest portfolio available of RF to light solutions for wireless network infrastructures.
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5200 - 5900 MHz GaN MMIC For Radar Power Amplifiers: CMPA5259050F
12/3/2018
The CMPA5259050F gallium nitride (GaN) high electron mobility transistor (HEMT) from Cree is designed to provide high efficiency, high gain, and wide bandwidth capabilities in applications operating in the 5.2 – 5.9 GHz frequency range. Supplied in a ceramic/metal flange package, the amplifier also operates at 50 Watts and 28 volts.
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GaN S-Band 50Ω Transistor: IGT2731L120
7/27/2016
Integra Technologies introduces IGT2731L120 with GaN on SiC HEMT technology, exhibiting 13 dB typical gain, and 50% drain efficiency. This device is 100% high power RF tested in a 50Ω RF test fixture.
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10500 Avionics Transistor
8/12/2005
APT RF’s Avionics Transistor, 500W, Class C, common base power transistor is designed for Mode-S systems covering 1030-1090 MHz...
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380 W, 1210-1400 MHz GaN/SiC Transistor: IGN1214M380C
12/2/2016
Integra Technologies introduces the IGN1214M380C GaN/SiC transistor, exhibiting 20 dB gain, 54% efficiency at 150 us-10% pulse conditions, and operation in the 1210-1400 MHz frequency range. These devices are 100% tested for large signal parameters.