1200W GaN L-Band Avionics Transistor: Highest Power In The Industry
Source: Integra Technologies, Inc.
Integra Technologies introduces IGN1011L1200 on GaN/SiC, exhibiting 17dB gain and 75% efficiency at 1030-1090 MHz, 50V, for IFF at ELM Mode S pulse conditions. Devices are 100% tested.
This avionics transistor utilizes GEN-2 GaN on SiC HEMT technology and comes with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid.
Additional features include:
- POUT-PK = 1200W @ ELM Mode S / 6.4% / 50V
- Power Gain: 18.0 dB (max)
- Package Size: W=1.340″ (34.04mm), L=0.385″ (9.78mm)
- 100% High Power RF Tested in Fixed Tuned RF Test Fixture
For more specifications on the GaN L-band avionics transistor, download the datasheet.
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