GaN L-Band Avionics Transistor: IGN1011L1200 Datasheet

The IGN1011L1200 is a GaN avionics transistor capable of operation within the L-band (1.030 GHz – 1.090 GHz). This device utilizes GEN-2 GaN on SiC HEMT technology and comes with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid. For more specifications on the GaN L-band avionics transistor, download the datasheet.