1. C-Band GaN 4.0 kW Pulsed Solid State Power Amplifier Module: VSC3645

    CPI’s Beverly Microwave Division presents the VSC3645 GaN 4.0 kW pulsed solid state power amplifier module operating in the C-band (5.2 – 5.9 GHz). This high efficiency, high power, compact amplifier is highly efficient, easy to maintain, and is designed to easily create high power C-band radar transmitters.

  2. DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010

    The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

  3. GaN Wideband Transistor: MAGX-011086

    The MAGX-011086 is a wideband transistor optimized for operations in DC - 6 GHz. This GaN HEMT is made with operating output power levels of 4W (36 dBm) in an industry standard, low inductance, and a surface mount QFN package.

  4. GaN HEMT RF Power Transistors

    Wolfspeed, a Cree Company, introduces a new series of GaN HEMT RF power transistors designed to enable broadband power amplifiers for commercial and military wireless communications and radar applications. These power devices are operate from a 28 V rail, and are developed using Wolfspeed’s proven 0.25 µm GaN-on-SiC process.

  5. RF Transistors
    Wideband RF transistors are optimized for amplification of DAB and DAR signals
  6. GaN on Sic HEMT Transistor

    These 35W GaN SiC RF Power Transistors are ideal for commercial and military radar, professional and military radio communications systems, jammers, wideband or narrowband filters, and test instrumentation. They cover the DC to 3.5 GHz frequency range and are available in a bolt down flanged package and in a solder down earless package.

  7. TPR700 Avionics Transistor
    Avionics Transistor, 350W, Class C, common base power transistor is designed for transponder avionics applications at 1090 MHz with 10uS, 1% pulsing at Vcc = 50V
  8. RF Transistor for Secondary Surveillance Radar Aviation: 1011GN-700ELM

    This common source class AB, GaN on SiC HEMT RF power transistor has been specifically designed for Mode-S ELM applications, and secondary surveillance radar (SSR) applications. SSR allows air traffic controllers to identify, track, and measure an airplane’s location.

  9. GaN S-Band 50Ω Transistor: IGT2731M130

    Integra Technologies introduces IGT2731M130 transistor with GaN on SiC HEMT technology, and exhibits 16 dB typical gain and 50% drain efficiency. It is ideal for applications operating in the 2.7-3.1 GHz frequency range. This depletion mode device is 100% high power RF tested in a 50Ω RF test fixture.

  10. UHF Transistors
    ntegra’s lineup of UHF silicon bipolar and MOSFET high power transistors boasts industry leading performance. These common source and common base power devices offer the highest pulsed RF power and smallest circuit footprint available in any UHF silicon bipolar and MOSFET high power transistor