transistors-products
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Power Transistors And Modules For S-Band Radar
12/16/2008
Microsemi’s new S-Band power modules provide a complete design solution, combining two Microsemi transistors in hermetically sealed packages, with input/output circuitry matched to 50 ohm. Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.
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1800 W, 65 V, 1.0 – 1.1 GHz Highest Power GaN Transistor On The Market: QPD1025L
6/29/2018
Qorvo offers the 1800 W, 65 V, 1.0 – 1.1 GHz QPD1025L as the highest GaN transistor on the market. This discrete GaN on SiC HEMT has a package that features input pre-match resulting in ease of external board match and saved board space.
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Mobility Transistors
4/14/1999
A family of low-noise pseudomorphic high-electron mobility transistors (PHEMT) uses the company’s latest-generation gallium arsenide (GaAs) fabrication process
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RF Power Transistors: S-Band
7/28/2011
Microsemi has leveraged its industry-leading expertise in S-band RF power transistors to create a family of GaN-on-SiC solutions that are tailored to support the requirements of next-generation systems requiring higher power, better efficiency, and wider bandwidth than is possible using conventional silicon or SiC process technologies. For applications operating in frequency bands up to 20GHz, the wide bandgap material properties of GaN-on-SiC technology enable smaller systems with improved voltage, gain, broadband performance, drain efficiency, and long-term reliability.
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GaN RF Input-Matched Transistor: QPD1025L
11/3/2022
The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space.
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RF Transistor for Secondary Surveillance Radar Aviation: 1011GN-700ELM
9/5/2012
This common source class AB, GaN on SiC HEMT RF power transistor has been specifically designed for Mode-S ELM applications, and secondary surveillance radar (SSR) applications. SSR allows air traffic controllers to identify, track, and measure an airplane’s location.
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UHF Transistors
2/15/2007
ntegra’s lineup of UHF silicon bipolar and MOSFET high power transistors boasts industry leading performance. These common source and common base power devices offer the highest pulsed RF power and smallest circuit footprint available in any UHF silicon bipolar and MOSFET high power transistor
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35 W, 2.0 – 6.0 GHz GaN MMIC Power Amplifier: CMPA2060035F
7/2/2020
The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
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HF12-125 Bipolar Power Transistor
1/30/2009
The HF12-125 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. The HF12-series products utilize the unique Spectrum Devices’ Bipolar process which offers a 67% improvement in collector-base breakdown voltage, enhancing reliability while maintaining RF performance.
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RF Transistors
3/19/1999
Wideband RF transistors are optimized for amplification of DAB and DAR signals