transistors-products

31. High L-Band Series Transistors 1/30/2006
    The High L-Band series transistors from Advanced Power Technology consists of three model types: 1517-20M, 1517-110M, and 1517-250M which cover the frequency for High L-Band Radar Applications from 1480 to 1650 MHz with a pulsed output power of 20W, 110W, and 250W respectively...
32. GaN RF Input-Matched Transistor: QPD1025L 11/3/2022

    The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space.

33. Rugged LDMOS RF Power Transistors for Harsh Conditions 6/29/2012

    These rugged LDMOS (laterally diffused metal oxide semiconductor) transistors operate over a wide 1 MHz to 2 GHz frequency range. They’re ideal for applications subject to harsh conditions like HF-UHF transmitters and transceivers, white space data transceivers, defense and aerospace systems, television transmitters, test equipment, and radar systems

34. GaN on Sic HEMT Transistor 1/25/2013

    These 35W GaN SiC RF Power Transistors are ideal for commercial and military radar, professional and military radio communications systems, jammers, wideband or narrowband filters, and test instrumentation. They cover the DC to 3.5 GHz frequency range and are available in a bolt down flanged package and in a solder down earless package.

35. X-Band, GaN/SiC Power Transistor: IGT1112M90 5/14/2019

    Integra Technologies offers the IGT1112M90 X-band, GaN/SiC power transistor designed to meet the requirements of radar systems operating in the X-band. Operating in the 10.8 – 11.8 GHz frequency range with under 150µs and 10% duty cycle pulse conditions, the device supplies a minimum of 90 W of peak output power, with an associated 9 dB of gain and 35% efficiency.

36. VRF152 -- RF Power Vertical MOSFET Transistor 6/25/2009
    The new VRF152 from Microsemi is a gold-metalized silicon n-channel RF power transistor designed for broadband commercial and hi-rel applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulations distortion. It can operate up to 175MHz at 150W with a typical gain of 13dB at very high efficiency on a 50V DC supply.
37. Mobility Transistors 4/14/1999
    A family of low-noise pseudomorphic high-electron mobility transistors (PHEMT) uses the company’s latest-generation gallium arsenide (GaAs) fabrication process
38. High Power 1214-370M Transistor 9/26/2005
    This transistor provides RF pulsed Peak Power of 370 Watts at 330 us, 10%.
39. ARF477FL -- RF Power MOSFET Transistors 6/29/2009
    The new ARF477FL is a 500V (BVdss) push-pull matched pair transistor product providing up to100MHz operation in the ISM Band for industrial, scientific and medical applications including semiconductor capital equipment and MRI systems...
40. 2GHz RF Transistors 3/24/1999
    A family of 2-GHz high-power RF transistors features the PTF10120, 10043, 10035, and 10112 models