Wideband RF Transistors
The PTF 10049 and PTF 10037 families of wideband, high-power, RF transistors are designed for use in the amplification of UHF frequencies
RF Power Transistor Series
The PD5xxxx series of radio-frequency (RF) power transistors is aimed at wireless base station and mobile radio applications where high volume...
Synthesized LO Loop Test Translators (LTTs): ALR Series
The new ALR series of dual channel loop test translators (LTTs) features simultaneous operation within the Ka and Ku bands, and has the ability to introduce different transfer characteristics in each channel. These instruments are used in an array of testing applications for frequency conversions of uplink (Tx) frequencies to either downlink (Rx) frequencies or to L-Band, and for L-Band to downlink (Rx).
VRF152 -- RF Power Vertical MOSFET Transistor
The new VRF152 from Microsemi is a gold-metalized silicon n-channel RF power transistor designed for broadband commercial and hi-rel applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulations distortion. It can operate up to 175MHz at 150W with a typical gain of 13dB at very high efficiency on a 50V DC supply.
CW VDMOS Transistors
Integra's newly released series of CW VDMOS transistors once again sets the standard for output power, gain, and efficiency. All of these push pull devices feature gold metallization for maximum reliability and are available now
1800 W, 65 V, 1.0 – 1.1 GHz Highest Power GaN Transistor On The Market: QPD1025L
Qorvo offers the 1800 W, 65 V, 1.0 – 1.1 GHz QPD1025L as the highest GaN transistor on the market. This discrete GaN on SiC HEMT has a package that features input pre-match resulting in ease of external board match and saved board space.
C-Band GaN 4.0 kW Pulsed Solid State Power Amplifier Module: VSC3645
CPI’s Beverly Microwave Division presents the VSC3645 GaN 4.0 kW pulsed solid state power amplifier module operating in the C-band (5.2 – 5.9 GHz). This high efficiency, high power, compact amplifier is highly efficient, easy to maintain, and is designed to easily create high power C-band radar transmitters.
HF12-Series Bipolar Power Transistors
Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 12 volt products offer drop-in equivalence to other manufacturers.
500 W GaN/SiC Long-Pulse L-Band Transistor: IGN1214L500B
Integra Technologies introduces the IGN1214L500B long-pulse transistor with GaN on SiC HEMT technology, operating at 380 W for applications from 1.2 – 1.4 GHz. The transistor exhibits 15.5 dB typical gain, and 65% efficiency, at 2 milliseconds and 20% pulse conditions. It is specified for use under Class AB operation.
Integra’s lineup of silicon bipolar and MOSFET power transistors for avionics applications boasts performance unavailable from any competing vendor. These products are designed to address the most stringent requirements for TCAS, MODE-S, MODE S-ELM, IFF, ADS-B, UAT, JTIDS, DME, and TACAN