DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010
The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.
GaN on Sic HEMT Transistor
These 35W GaN SiC RF Power Transistors are ideal for commercial and military radar, professional and military radio communications systems, jammers, wideband or narrowband filters, and test instrumentation. They cover the DC to 3.5 GHz frequency range and are available in a bolt down flanged package and in a solder down earless package.
450MHz 500W UHF Radar Transistor
The high power pulsed radar transistor device part number IB450S500
is designed for UHF radar systems operating at 450 MHz. While
operating in class C mode this common base device supplies a
minimum of 500 watts of peak pulse power under the conditions of
30us pulse width and 10% duty cycle. All devices are 100% screened
for large signal RF parameters...
TAN350 Avionics Transistor
APT-RF’s Avionics Transistor, 350W, Class C, common base power transistor is designed for broadband TACAN systems covering 960-1215 MHz with 10uS, 10% pulsing at Vcc = 50V
0405-500L: UHF Transistor For Long Pulsed Radar Applications
The 0405-500L is an internally-matched, common emitter transistor
capable of providing 500 Watts of pulsed RF output power in a push-pull
configuration at one thousand and one hundred microsecond pulse width
twenty–six percent duty factor across the frequency band 400 to 450 MHz
Broadband General Purpose GaN Transistor: IGN0160UM10
Integra Technologies offers the IGN0160UM10 broadband GaN transistor for use in general purpose applications. The transistor operates throughout the 0.100 through 6.00 GHz frequency range, and is designed to utilize GaN on SiC HEMT technology.
Integra’s lineup of L-band silicon bipolar transistors boasts industry leading performance. These common base devices offer the highest pulsed RF power, highest gain and smallest footprint available
Integra’s lineup of VHF - VDMOS silicon MOSFET power transistors boasts performance unmatched by any other vendor.
These common source power transistor devices offer the highest pulsed RF power and smallest circuit footprint available in any VHF - VDMOS silicon MOSFET high power transistors.
Model PTF 10100 is a 900-MHz transistor optimized for amplification of cellular base station signals
Power Transistors And Modules For S-Band Radar
Microsemi’s new S-Band power modules provide a complete design solution, combining two Microsemi transistors in hermetically sealed packages, with input/output circuitry matched to 50 ohm. Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.