1. 1,500 Watt RF Power Transistor For UHF Pulsed Radar
    Microsemi Corporation recently introduced the new 1,500 watt RF power transistor for UHF pulsed radar applications, thus expanding its industry-leading portfolio of high power silicon carbide transistors.
  2. DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010

    The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

  3. DME800 Avionics Transistor
    APT-RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for broadband DME systems covering 1025-1150 MHz...
  4. MDS1100 Avionics Transistor
    APT-RF’s Avionics Transistor, Mode-S 1100W, Class C, common base power transistor is designed for standard Mode-S 128uS pulsing at 1030 MHz...
  5. GaN Technology For Wireless Base Stations

    The new MAGb series from MACOM is a family of the industry’s first commercial base station-optimized GaN transistors designed to achieve excellent efficiency, bandwidth, and power gain. It is also the broadest portfolio available of RF to light solutions for wireless network infrastructures.

  6. Rugged LDMOS RF Power Transistors for Harsh Conditions

    These rugged LDMOS (laterally diffused metal oxide semiconductor) transistors operate over a wide 1 MHz to 2 GHz frequency range. They’re ideal for applications subject to harsh conditions like HF-UHF transmitters and transceivers, white space data transceivers, defense and aerospace systems, television transmitters, test equipment, and radar systems

  7. GaN S-Band 50Ω Transistor: IGT2731M130

    Integra Technologies introduces IGT2731M130 transistor with GaN on SiC HEMT technology, and exhibits 16 dB typical gain and 50% drain efficiency. It is ideal for applications operating in the 2.7-3.1 GHz frequency range. This depletion mode device is 100% high power RF tested in a 50Ω RF test fixture.

  8. Synthesized LO Loop Test Translators (LTTs): ALR Series

    The new ALR series of dual channel loop test translators (LTTs) features simultaneous operation within the Ka and Ku bands, and has the ability to introduce different transfer characteristics in each channel. These instruments are used in an array of testing applications for frequency conversions of uplink (Tx) frequencies to either downlink (Rx) frequencies or to L-Band, and for L-Band to downlink (Rx).

  9. 800-1000 MHz 12W P-Band Radar Transistor
    The IB0810M12 is a 12 watt, common base silicon bipolar transistor intended to operate in class C mode over the instantaneous operating frequency band of 870-990 MHz
  10. GaN MMIC Amplifiers/Transistors

    Northrop Grumman’s first three entries in their GaN MMIC Amplifiers have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market.