1800 W, 65 V, 1.0 – 1.1 GHz Highest Power GaN Transistor On The Market: QPD1025L
Qorvo offers the 1800 W, 65 V, 1.0 – 1.1 GHz QPD1025L as the highest GaN transistor on the market. This discrete GaN on SiC HEMT has a package that features input pre-match resulting in ease of external board match and saved board space.
RF Power Transistor Series
The PD5xxxx series of radio-frequency (RF) power transistors is aimed at wireless base station and mobile radio applications where high volume...
Silicon Carbide RF Power Transistors
Microsemi Corporation recently announced its first two RF power transistors utilizing silicon carbide technology for high power VHF and UHF band pulsed radar applications. Designated 0150SC-1250M and 0405SC-1000M, these RF Power transistors utilize state-of-the-art silicon carbide technology designed for VHF - 150 to 160 MHz, and UHF - 406 to 450 MHz respectively
Integra’s lineup of silicon bipolar and MOSFET power transistors for avionics applications boasts performance unavailable from any competing vendor. These products are designed to address the most stringent requirements for TCAS, MODE-S, MODE S-ELM, IFF, ADS-B, UAT, JTIDS, DME, and TACAN
0405-1000M - 400 To 450 MHz UHF Power Transistor
The 0405-1000M transistor from Microsemi Power Products Group is designed for UHF frequency, 400 to 450 MHz. This high performance, common emitter, class C, output stage offers unparalleled performance of 1000W of peak power, 70% collector efficiency at 450 MHz, and is in a hermetically sealed package for the best reliability for weather radar and over the horizon radar applications...
DME800 Avionics Transistor
APT-RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for broadband DME systems covering 1025-1150 MHz...
RF Power Transistor
The PTF 10149 RF power transistor is intended for use in applications in the 920-960 MHz band
GaN on Sic HEMT Transistor
These 35W GaN SiC RF Power Transistors are ideal for commercial and military radar, professional and military radio communications systems, jammers, wideband or narrowband filters, and test instrumentation. They cover the DC to 3.5 GHz frequency range and are available in a bolt down flanged package and in a solder down earless package.
TAN350 Avionics Transistor
APT-RF’s Avionics Transistor, 350W, Class C, common base power transistor is designed for broadband TACAN systems covering 960-1215 MHz with 10uS, 10% pulsing at Vcc = 50V
Rugged LDMOS RF Power Transistors for Harsh Conditions
These rugged LDMOS (laterally diffused metal oxide semiconductor) transistors operate over a wide 1 MHz to 2 GHz frequency range. They’re ideal for applications subject to harsh conditions like HF-UHF transmitters and transceivers, white space data transceivers, defense and aerospace systems, television transmitters, test equipment, and radar systems