500 W GaN/SiC Long-Pulse L-Band Transistor: IGN1214L500B
Integra Technologies introduces the IGN1214L500B long-pulse transistor with GaN on SiC HEMT technology, operating at 380 W for applications from 1.2 – 1.4 GHz. The transistor exhibits 15.5 dB typical gain, and 65% efficiency, at 2 milliseconds and 20% pulse conditions. It is specified for use under Class AB operation.
A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
DME800 Avionics Transistor
APT-RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for broadband DME systems covering 1025-1150 MHz...
NPN Wideband Silicon RF Transistor: BFU630F
NXP offers a complete portfolio of SiGe:C wideband transistors for maximum performance and design flexibility, and the BFU630F product is a good example of it. This BFU630F wideband transistor delivers extremely low noise and high maximum gain, making it ideal for sensitive RF receivers in high-performance applications such as next-generation cell phones. At the same time, the high operating frequencies are ideal for use in microwave applications in the 10 to 30 GHz range, such as satellite TV receivers and automotive collision avoidance radar. NXP’s innovative silicon-germanium-carbon (SiGe:C) BiCMOS processes enable this outstanding performance, combining the performance of gallium-arsenide (GaAs) technologies with the reliability of silicon-based processes.
High-Efficiency Power Transistor: RF3932
The RF3932 High-Efficiency Power Transistor is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN)semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design.
Model PTF 10100 is a 900-MHz transistor optimized for amplification of cellular base station signals
MDS500L Avionics Bipolar Transistor
The MDS500L is a Vcc = 50V, class C bipolar transistor specifically designed to handle the heavy pulsing of the Mode-S ELM format (32uS on / 18uS off x 48pulses burst). The transistor provides greater than 500W of output power with an input power of 70W...
500 W GaN RF IMFET: QPD1003
Qorvo offers a 500 W, internally matched discrete GaN on SiC HEMT operating in the 1.2 to 1.4 GHz range. This device is fully matched to 50 Ohm, can support pulsed and linear operations, and is ideal for civilian and military radar applications.
Power Transistors And Modules For S-Band Radar
Microsemi’s new S-Band power modules provide a complete design solution, combining two Microsemi transistors in hermetically sealed packages, with input/output circuitry matched to 50 ohm. Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.
HF50-250 Bipolar Power Transistor
The HF50-250 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness and reliability.