Synthesized LO Loop Test Translators (LTTs): ALR Series
The new ALR series of dual channel loop test translators (LTTs) features simultaneous operation within the Ka and Ku bands, and has the ability to introduce different transfer characteristics in each channel. These instruments are used in an array of testing applications for frequency conversions of uplink (Tx) frequencies to either downlink (Rx) frequencies or to L-Band, and for L-Band to downlink (Rx).
Wideband RF transistors are optimized for amplification of DAB and DAR signals
Integra’s lineup of VHF - VDMOS silicon MOSFET power transistors boasts performance unmatched by any other vendor.
These common source power transistor devices offer the highest pulsed RF power and smallest circuit footprint available in any VHF - VDMOS silicon MOSFET high power transistors.
HF12-Series Bipolar Power Transistors
Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 12 volt products offer drop-in equivalence to other manufacturers.
High Power 1214-370M Transistor
This transistor provides RF pulsed Peak Power of 370 Watts at 330 us, 10%.
Silicon Carbide RF Power Transistors
Microsemi Corporation recently announced its first two RF power transistors utilizing silicon carbide technology for high power VHF and UHF band pulsed radar applications. Designated 0150SC-1250M and 0405SC-1000M, these RF Power transistors utilize state-of-the-art silicon carbide technology designed for VHF - 150 to 160 MHz, and UHF - 406 to 450 MHz respectively
A family of low-noise pseudomorphic high-electron mobility transistors (PHEMT) uses the company’s latest-generation gallium arsenide (GaAs) fabrication process
GaN Technology For Wireless Base Stations
The new MAGb series from MACOM is a family of the industry’s first commercial base station-optimized GaN transistors designed to achieve excellent efficiency, bandwidth, and power gain. It is also the broadest portfolio available of RF to light solutions for wireless network infrastructures.
HF50-250 Bipolar Power Transistor
The HF50-250 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness and reliability.
RF Power Transistors for Aerospace and Defense
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz 1090 MHz range.
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances, designed for broadband operation (1030 MHz to 1090 MHz). It has easy power control, excellent ruggedness, excellent thermal stability, high efficiency, high flexibility with respect to pulse formats, Integrated ESD protection and Internally matched for ease of use.