HF12-Series Bipolar Power Transistors
Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 12 volt products offer drop-in equivalence to other manufacturers.
Integra’s lineup of silicon bipolar and MOSFET power transistors for avionics applications boasts performance unavailable from any competing vendor. These products are designed to address the most stringent requirements for TCAS, MODE-S, MODE S-ELM, IFF, ADS-B, UAT, JTIDS, DME, and TACAN
Insulated-gate Bipolar Transistors (IGBTS)
Richardson RFPD’s Insulated-gate Bipolar Transistors (IGBTS) use Microsemi’s leading-edge Power MOS 8™ technology and offer a dramatic reduction of twenty percent or more, in total switching and conduction losses as compared to competitive solutions.
TAN350 Avionics Transistor
APT-RF’s Avionics Transistor, 350W, Class C, common base power transistor is designed for broadband TACAN systems covering 960-1215 MHz with 10uS, 10% pulsing at Vcc = 50V
MDS1100 Avionics Transistor
APT-RF’s Avionics Transistor, Mode-S 1100W, Class C, common base power transistor is designed for standard Mode-S 128uS pulsing at 1030 MHz...
Model PTF 10100 is a 900-MHz transistor optimized for amplification of cellular base station signals
Integra’s lineup of L-band silicon bipolar transistors boasts industry leading performance. These common base devices offer the highest pulsed RF power, highest gain and smallest footprint available
GaN Wideband Transistor: MAGX-011086
The MAGX-011086 is a wideband transistor optimized for operations in DC - 6 GHz. This GaN HEMT is made with operating output power levels of 4W (36 dBm) in an industry standard, low inductance, and a surface mount QFN package.
Avionics Pulsed Power RF Transistors
Avionics Pulsed Power RF Transistors, M/A-COM MAPRST1030-1KS, a new 1,000 W peak, class C bipolar transistor designed for 1030 MHz pulsed avionics applications
ntegra’s lineup of UHF silicon bipolar and MOSFET high power transistors boasts industry leading performance. These common source and common base power devices offer the highest pulsed RF power and smallest circuit footprint available in any UHF silicon bipolar and MOSFET high power transistor