transistors-products

  1. 100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures 5/16/2016

    Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.

  2. MDS500L Avionics Bipolar Transistor 5/25/2006
    The MDS500L is a Vcc = 50V, class C bipolar transistor specifically designed to handle the heavy pulsing of the Mode-S ELM format (32uS on / 18uS off x 48pulses burst). The transistor provides greater than 500W of output power with an input power of 70W...
  3. 2731-100M Bipolar/LDMOS Transistor 10/17/2006
    The 2731-100M is a high performance, common base, class C output stage offering 100W of peak power, 40% collector efficiency, excellent 8.0 dB power gain flatness, and a hermetically-sealed high reliability package for Air Traffic Control and Military Radar applications...
  4. Mobility Transistors 4/14/1999
    A family of low-noise pseudomorphic high-electron mobility transistors (PHEMT) uses the company’s latest-generation gallium arsenide (GaAs) fabrication process
  5. 500 W GaN RF IMFET: QPD1003 12/13/2016

    Qorvo offers a 500 W, internally matched discrete GaN on SiC HEMT operating in the 1.2 to 1.4 GHz range. This device is fully matched to 50 Ohm, can support pulsed and linear operations, and is ideal for civilian and military radar applications.

  6. HF50-Series Bipolar Power Transistors 1/20/2009
    Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 50 volt products offer drop-in equivalence to other manufacturers.
  7. 900-MHz Transistors 3/16/1999
    A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
  8. 2GHz RF Transistors 3/24/1999
    A family of 2-GHz high-power RF transistors features the PTF10120, 10043, 10035, and 10112 models
  9. RF Transistor 7/16/1999
    Model PTF 10100 is a 900-MHz transistor optimized for amplification of cellular base station signals
  10. GaN Wideband Transistor: MAGX-011086 4/20/2015

    The MAGX-011086 is a wideband transistor optimized for operations in DC - 6 GHz. This GaN HEMT is made with operating output power levels of 4W (36 dBm) in an industry standard, low inductance, and a surface mount QFN package.