1. 1200W GaN L-Band Avionics Transistor: Highest Power In The Industry

    Integra Technologies introduces IGN1011L1200 on GaN/SiC, exhibiting 17dB gain and 75% efficiency at 1030-1090 MHz, 50V, for IFF at ELM Mode S pulse conditions. Devices are 100% tested.

  2. 50-Ohm GaN RF Input-Matched Transistor: QPD1000

    Qorvo offers a wideband, 28 V, 50-Ohm input-matched RF transistor that is ideal for commercial and defense communications applications. This device has an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

  3. 900-MHz Transistors
    A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
  4. RF Power Transistor
    The PTF 10149 RF power transistor is intended for use in applications in the 920-960 MHz band
  5. 1,500 Watt RF Power Transistor For UHF Pulsed Radar
    Microsemi Corporation recently introduced the new 1,500 watt RF power transistor for UHF pulsed radar applications, thus expanding its industry-leading portfolio of high power silicon carbide transistors.
  6. 125-167 MHz 650W VHF Band Transistor
    The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 MHz...
  7. 2731-100M Bipolar/LDMOS Transistor
    The 2731-100M is a high performance, common base, class C output stage offering 100W of peak power, 40% collector efficiency, excellent 8.0 dB power gain flatness, and a hermetically-sealed high reliability package for Air Traffic Control and Military Radar applications...
  8. 30 W, DC - 6.0 GHz, GaN HEMT: CGHV27030S

    Wolfspeed, A Cree Company, offers the new CGHV27030S unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) with operation in the 700 - 960 MHz, 1200 - 1400 MHz, 1800 - 2200 MHz, and 3300 - 3700 MHz frequency ranges at both 50 V and 28 V. With features like high efficiency, high gain, and wide bandwidth capabilities, this transistor is ideal for telecommunications applications, as well as tactical communications applications from 20 - 2500 MHz.

  9. RF Power Transistor Series
    The PD5xxxx series of radio-frequency (RF) power transistors is aimed at wireless base station and mobile radio applications where high volume...
  10. MDS500L Avionics Bipolar Transistor
    The MDS500L is a Vcc = 50V, class C bipolar transistor specifically designed to handle the heavy pulsing of the Mode-S ELM format (32uS on / 18uS off x 48pulses burst). The transistor provides greater than 500W of output power with an input power of 70W...