transistors-products

  1. HF12-125 Bipolar Power Transistor
    1/30/2009
    The HF12-125 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. The HF12-series products utilize the unique Spectrum Devices’ Bipolar process which offers a 67% improvement in collector-base breakdown voltage, enhancing reliability while maintaining RF performance.
  2. RF Power Transistor: 250 Watt, 50 Volt HF50-250
    4/26/2010
    The HF50-250 RF Power transistor is designed for the 50V, 2-30 MHz RF Amplifier, RF Power Supply and RF Power Generator markets. Operating at 30 MHz and 50 Volts DC, the device will provide a minimum Power Gain of 14.5 dB, with the minimum Output Power specified at 250 Watts, PEP.
  3. TCS800 Avionics Transistor
    9/29/2005
    APT RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for TCAS systems covering 1030-1090 MHz with 32uS, 1% pulsing at Vcc = 50V
  4. 2GHz RF Transistors
    3/24/1999
    A family of 2-GHz high-power RF transistors features the PTF10120, 10043, 10035, and 10112 models
  5. DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010
    4/28/2016

    The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

  6. 800-1000 MHz 12W P-Band Radar Transistor
    3/2/2001
    The IB0810M12 is a 12 watt, common base silicon bipolar transistor intended to operate in class C mode over the instantaneous operating frequency band of 870-990 MHz
  7. Silicon Carbide RF Power Transistors
    10/15/2008
    Microsemi Corporation recently announced its first two RF power transistors utilizing silicon carbide technology for high power VHF and UHF band pulsed radar applications. Designated 0150SC-1250M and 0405SC-1000M, these RF Power transistors utilize state-of-the-art silicon carbide technology designed for VHF - 150 to 160 MHz, and UHF - 406 to 450 MHz respectively
  8. HF28-Series Bipolar Power Transistors
    1/20/2009
    Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 28 volt products offer drop-in equivalence to other manufacturers.
  9. 900-MHz Transistors
    3/16/1999
    A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
  10. MDS1100 Avionics Transistor
    8/12/2005
    APT-RF’s Avionics Transistor, Mode-S 1100W, Class C, common base power transistor is designed for standard Mode-S 128uS pulsing at 1030 MHz...