Integra Technologies introduces IGT2731M130 transistor with GaN on SiC HEMT technology, and exhibits 16 dB typical gain and 50% drain efficiency. It is ideal for applications operating in the 2.7-3.1 GHz frequency range. This depletion mode device is 100% high power RF tested in a 50Ω RF test fixture.
The S-band transistor is an internally impedance matched device, and is included with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid.
Additional features include:
For more specifications on the GaN S-band 50Ω transistor, download the datasheet.