Product/Service

Avionics Transistors

Source: Integra Technologies, Inc.

avionics
Integra's lineup of silicon bipolar and MOSFET power transistors for avionics applications boasts performance unavailable from any competing vendor. These products are designed to address the most stringent requirements for TCAS, MODE-S, MODE S-ELM, IFF, ADS-B, UAT, JTIDS, DME, and TACAN
Integra's lineup of silicon bipolar and MOSFET power transistors for avionics applications boasts performance unavailable from any competing vendor.

These products are designed to address the most stringent requirements for TCAS, MODE-S, MODE S-ELM, IFF, ADS-B, UAT, JTIDS, DME, and TACAN.

These common source and common base devices offer the highest pulsed RF power, highest gain and smallest footprint available in any silicon bipolar and MOSFET power transistors for avionics.

Integra IMOS transistors are a first in the industry and provide a more rugged, higher power density alternative to LDMOS offerings. We also offer 50 ohm matched miniaturized amplifier pallets/modules which simplify system integration considerably.

All of Integra's silicon bipolar and MOSFET power transistors for avionics applications feature an all gold metal system for unmatched reliability and maximum performance. 

CLICK ON THE TRANSISTOR P/N ( PART NUMBER ) FOR A TRANSISTOR DATA SHEET

Avionics Pout
(W)
Typ.
Pin
(W)
Gain
(dB)
Typ.
Min
IRL
(dB)
VCC
(V)
Eff
(%)
Typ.
P/N
JTIDS/MIDS
960-1215MHz,
5.8 ms pulse burst,22.7%
32 2.7 10.7 10.0 36 60.5 IB0912L30
73 5 11.6

9.0

44 58.2 IB0912L70
235 22 10.3

10.0

44

55.5

IB0912L200
Transponder/Interrogator
1030/1090 MHz
10us, 1% LTDC
87 8 10.4 10.0 50 70 IB1011S70
200 12 12.2 10.0 60 70 IB1011S190
285 32

9.5

10.0 50 61 IB1011S250
350 25

11.5

10.0 50 59 IB1011S350
1070 112

9.8

10.0 50 57 IB1011S1000
1570 168

9.7

10.0 60 51 IB1011S1500
DME
1025-1150 MHz
10us, 1% LTDC
11 0.9 10.8 10.0 50 41 IB1012S10
22 2

10.4

10.0 50 51 IB1012S20
55 5 10.6 10.0 50 48 IB1012S50
158 15

10.2

10.0 50 53 IB1012S150
530 50 10.3 10.0 50 54 IB1012S500
858 85 10.0 9.0 50 50 IB1012S800
1160 120

9.8

9.0 60 50 IB1012S1100
TACAN
960-1215 MHz
10us, 10% LTDC
82 6 11.4 9.0 50 60 IB0912L70
365 33 10.7 10.0 50 55 IB0912M350
555 90 7.8 9.0 50 56 IB0912M500
637 90 8.5 9.0 50 53 IB0912M600
TCAS
1030/1090 MHz
32us, 2% LTDC
1145 145 9.0 10.0 60 44 IB1011M1100
Mode S Interrogator
1030 MHz
0.5us on / 0.5us off
x128, 1%LTDC
11 1.0 10.4 10.0 50 52 IB1011M10
25.1 0.9 13.8

10.0

50

61.4

IB1011M20
75 8.8 9.2 10.0 50 65 IB1011M70
151 9 12.2 10.0 50 56 IB1011M140
205 12 12.3 10.0 50 75 IB1011M190
260 39.6 8.4 10.0 50 61 IB1011M250
375 31.2 11.1 10.0 50 72 IB1011M350
705 55 11.1 10.0 50 57 IB1011M650
825 110 8.8 10.0 50 52 IB1011M800
1040 126 9.2 10.0 50 58 IB1011M1000
Mode S-ELM Interrogator
1030 MHz
32 us on / 18us off
x48. 6.4% LTDC
17

0.6

14.5 10.0 48 66.7 IB1011L15
45

4.8

9.7

10.0

48

57

IB1011L40
120 9.5 11.0 10.0 48 65 IB1011L110
235 27 9.3 10.0 48 56 IB1011L220
520 50 10.2 10.0 48 57 IB1011L470
LDMOS Pout
(W)
Typ.
Pin
(W)

Gain
(dB)
Typ.
Min
IRL
(dB)
VCC

(V)
Eff
(%)
Typ.
P/N


LDMOS
1030/1090 MHz
50us, 2% LTDC

20.5

0.75 14.4 10 28 47 ILD1011M15

45.5

1.0 16.6 10 28 63 ILD1011M30

164

7.0 14.0 10 32 54 ILD1011M150

267

10.0 14.3 10 32 47 ILD1011M250

400

11.0 15.6 10 32 56 ILD1011M400

Other Transistors By Integra:

VHF Transistors 
UHF Transistors 
L-Band Transistors 
S-Band Transistors 
S-Band Medical Transistors 
Pallets
CW VDMOS Transistors