Avionics Transistors
These products are designed to address the most stringent requirements for TCAS, MODE-S, MODE S-ELM, IFF, ADS-B, UAT, JTIDS, DME, and TACAN.
These common source and common base devices offer the highest pulsed RF power, highest gain and smallest footprint available in any silicon bipolar and MOSFET power transistors for avionics.
Integra IMOS transistors are a first in the industry and provide a more rugged, higher power density alternative to LDMOS offerings. We also offer 50 ohm matched miniaturized amplifier pallets/modules which simplify system integration considerably.
All of Integra's silicon bipolar and MOSFET power transistors for avionics applications feature an all gold metal system for unmatched reliability and maximum performance.
CLICK ON THE TRANSISTOR P/N ( PART NUMBER ) FOR A TRANSISTOR DATA SHEET
| Avionics |
Pout (W) Typ. |
Pin (W) |
Gain (dB) Typ. |
Min IRL (dB) |
VCC (V) |
Eff (%) Typ. |
P/N |
| JTIDS/MIDS 960-1215MHz, 5.8 ms pulse burst,22.7% |
32 | 2.7 | 10.7 | 10.0 | 36 | 60.5 | IB0912L30 |
| 73 | 5 | 11.6 |
9.0 |
44 | 58.2 | IB0912L70 | |
| 235 | 22 | 10.3 |
10.0 |
44 |
55.5 |
IB0912L200 | |
| Transponder/Interrogator 1030/1090 MHz 10us, 1% LTDC |
87 | 8 | 10.4 | 10.0 | 50 | 70 | IB1011S70 |
| 200 | 12 | 12.2 | 10.0 | 60 | 70 | IB1011S190 | |
| 285 | 32 |
9.5 |
10.0 | 50 | 61 | IB1011S250 | |
| 350 | 25 |
11.5 |
10.0 | 50 | 59 | IB1011S350 | |
| 1070 | 112 |
9.8 |
10.0 | 50 | 57 | IB1011S1000 | |
| 1570 | 168 |
9.7 |
10.0 | 60 | 51 | IB1011S1500 | |
| DME 1025-1150 MHz 10us, 1% LTDC |
11 | 0.9 | 10.8 | 10.0 | 50 | 41 | IB1012S10 |
| 22 | 2 |
10.4 |
10.0 | 50 | 51 | IB1012S20 | |
| 55 | 5 | 10.6 | 10.0 | 50 | 48 | IB1012S50 | |
| 158 | 15 |
10.2 |
10.0 | 50 | 53 | IB1012S150 | |
| 530 | 50 | 10.3 | 10.0 | 50 | 54 | IB1012S500 | |
| 858 | 85 | 10.0 | 9.0 | 50 | 50 | IB1012S800 | |
| 1160 | 120 |
9.8 |
9.0 | 60 | 50 | IB1012S1100 | |
| TACAN 960-1215 MHz 10us, 10% LTDC |
82 | 6 | 11.4 | 9.0 | 50 | 60 | IB0912L70 |
| 365 | 33 | 10.7 | 10.0 | 50 | 55 | IB0912M350 | |
| 555 | 90 | 7.8 | 9.0 | 50 | 56 | IB0912M500 | |
| 637 | 90 | 8.5 | 9.0 | 50 | 53 | IB0912M600 | |
| TCAS 1030/1090 MHz 32us, 2% LTDC |
1145 | 145 | 9.0 | 10.0 | 60 | 44 | IB1011M1100 |
| Mode S
Interrogator 1030 MHz 0.5us on / 0.5us off x128, 1%LTDC |
11 | 1.0 | 10.4 | 10.0 | 50 | 52 | IB1011M10 |
| 25.1 | 0.9 | 13.8 |
10.0 |
50 |
61.4 |
IB1011M20 | |
| 75 | 8.8 | 9.2 | 10.0 | 50 | 65 | IB1011M70 | |
| 151 | 9 | 12.2 | 10.0 | 50 | 56 | IB1011M140 | |
| 205 | 12 | 12.3 | 10.0 | 50 | 75 | IB1011M190 | |
| 260 | 39.6 | 8.4 | 10.0 | 50 | 61 | IB1011M250 | |
| 375 | 31.2 | 11.1 | 10.0 | 50 | 72 | IB1011M350 | |
| 705 | 55 | 11.1 | 10.0 | 50 | 57 | IB1011M650 | |
| 825 | 110 | 8.8 | 10.0 | 50 | 52 | IB1011M800 | |
| 1040 | 126 | 9.2 | 10.0 | 50 | 58 | IB1011M1000 | |
| Mode S-ELM
Interrogator 1030 MHz 32 us on / 18us off x48. 6.4% LTDC |
17 |
0.6 |
14.5 | 10.0 | 48 | 66.7 | IB1011L15 |
| 45 |
4.8 |
9.7 |
10.0 |
48 |
57 |
IB1011L40 | |
| 120 | 9.5 | 11.0 | 10.0 | 48 | 65 | IB1011L110 | |
| 235 | 27 | 9.3 | 10.0 | 48 | 56 | IB1011L220 | |
| 520 | 50 | 10.2 | 10.0 | 48 | 57 | IB1011L470 | |
| LDMOS |
Pout (W) Typ. |
Pin (W) |
Gain (dB) Typ. |
Min IRL (dB) |
VCC (V) |
Eff (%) Typ. |
P/N |
| LDMOS 1030/1090 MHz 50us, 2% LTDC |
20.5 |
0.75 | 14.4 | 10 | 28 | 47 | ILD1011M15 |
|
45.5 |
1.0 | 16.6 | 10 | 28 | 63 | ILD1011M30 | |
|
164 |
7.0 | 14.0 | 10 | 32 | 54 | ILD1011M150 | |
|
267 |
10.0 | 14.3 | 10 | 32 | 47 | ILD1011M250 | |
|
400 |
11.0 | 15.6 | 10 | 32 | 56 | ILD1011M400 |
Other Transistors By Integra:
VHF Transistors
UHF Transistors
L-Band Transistors
S-Band Transistors
S-Band Medical Transistors
Pallets
CW VDMOS Transistors