900-MHz Transistors
A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals. Supporting analog as well as digital modulation schemes, the transistors are gold-metalized, silicon, LDMOS FETs. Model PTF10100, for example, features a push-pull configuration, intermodulation distortion of better than –30 dB for PEP levels up to 165W. The device offers 13-dB linear gain and saturated power capability of more than 200 W.
Ericsson Components, RF Power Products, 675 Jarvis Road, Morgan Hill, CA 95037. Phone: 408-778-9434; FAX: 408-779-3108
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