Wolfspeed, a Cree Company, introduces a new series of GaN HEMT RF power transistors designed to enable broadband power amplifiers for commercial and military wireless communications and radar applications. These power devices are operate from a 28 V rail, and are developed using Wolfspeed’s proven 0.25 µm GaN-on-SiC process.
The HEMT transistor family is offered in bare die and packaged discretes samplings with large signal models in the portal. Features for these models include gain over +2 dB, high efficiency of 10 %, and higher bandwidths capabilities up to 8 GHz.
For more in-depth information on the individual models, download the available datasheets.