Datasheet | February 12, 2019

28 V GaN HEMT RF Power Transistors: CG2H30070F Datasheet

Source: Wolfspeed, A Cree Company

The CG2H30070F is a 10 W unmatched, gallium nitride (GaN) high-electron-mobility transistor (HEMT) operating from a 28 V rail with high efficiency, high gain, and wide bandwidth capabilities. These transistors are ideal for linear and compressed amplifier circuits, as well as a variety of other RF and microwave applications. For more in-depth information on the CG2H30070F, download the datasheet.

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