Product/Service

2731-100M Bipolar/LDMOS Transistor

Source: Microsemi Corporation

2731-100M Bipolar/LDMOS Transistor
The 2731-100M is a high performance, common base, class C output stage offering 100W of peak power, 40% collector efficiency, excellent 8.0 dB power gain flatness, and a hermetically-sealed high reliability package for Air Traffic Control and Military Radar applications...

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Datasheet: 2731-100M Bipolar/LDMOS Transistor

The 2731-100M is a high performance, common base, class C output stage offering 100W of peak power, 40% collector efficiency, excellent 8.0 dB power gain flatness, and a hermetically-sealed high reliability package for Air Traffic Control and Military Radar applications.

100 Watt, High Medium Pulse Power Transistor features 250µs pulse width and 40% collector efficiency for S-Band Radars.

KEY SPECIFICATIONS:

  • 250µs pulse width, 10% duty cycle
  • 100 Watts Peak Power
  • 8.0 dB Power Gain Flatness

Click Here To Download:
Datasheet: 2731-100M Bipolar/LDMOS Transistor