2731-100M Bipolar/LDMOS Transistor
Source: Microsemi Corporation
The 2731-100M is a high performance, common base, class C output stage offering 100W of peak power, 40% collector efficiency, excellent 8.0 dB power gain flatness, and a hermetically-sealed high reliability package for Air Traffic Control and Military Radar applications...
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•Datasheet: 2731-100M Bipolar/LDMOS Transistor
The 2731-100M is a high performance, common base, class C output stage offering 100W of peak power, 40% collector efficiency, excellent 8.0 dB power gain flatness, and a hermetically-sealed high reliability package for Air Traffic Control and Military Radar applications.
•Datasheet: 2731-100M Bipolar/LDMOS Transistor
•Datasheet: 2731-100M Bipolar/LDMOS Transistor
The 2731-100M is a high performance, common base, class C output stage offering 100W of peak power, 40% collector efficiency, excellent 8.0 dB power gain flatness, and a hermetically-sealed high reliability package for Air Traffic Control and Military Radar applications.
100 Watt, High Medium Pulse Power Transistor features 250µs pulse width and 40% collector efficiency for S-Band Radars.
KEY SPECIFICATIONS:
- 250µs pulse width, 10% duty cycle
- 100 Watts Peak Power
- 8.0 dB Power Gain Flatness
Click Here To Download:
•Datasheet: 2731-100M Bipolar/LDMOS Transistor
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