1. 0405-1000M - 400 To 450 MHz UHF Power Transistor
    The 0405-1000M transistor from Microsemi Power Products Group is designed for UHF frequency, 400 to 450 MHz. This high performance, common emitter, class C, output stage offers unparalleled performance of 1000W of peak power, 70% collector efficiency at 450 MHz, and is in a hermetically sealed package for the best reliability for weather radar and over the horizon radar applications...
  2. Insulated-gate Bipolar Transistors (IGBTS)

    Richardson RFPD’s Insulated-gate Bipolar Transistors (IGBTS) use Microsemi’s leading-edge Power MOS 8™ technology and offer a dramatic reduction of twenty percent or more, in total switching and conduction losses as compared to competitive solutions.

  3. RF Power Transistors for Aerospace and Defense
    600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz 1090 MHz range.
    Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances, designed for broadband operation (1030 MHz to 1090 MHz). It has easy power control, excellent ruggedness, excellent thermal stability, high efficiency, high flexibility with respect to pulse formats, Integrated ESD protection and Internally matched for ease of use.
  4. HF50-250 Bipolar Power Transistor
    The HF50-250 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness and reliability.
  5. HF28-Series Bipolar Power Transistors
    Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 28 volt products offer drop-in equivalence to other manufacturers.
  6. DME800 Avionics Transistor
    APT-RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for broadband DME systems covering 1025-1150 MHz...
  7. Mobility Transistors
    A family of low-noise pseudomorphic high-electron mobility transistors (PHEMT) uses the company’s latest-generation gallium arsenide (GaAs) fabrication process
  8. NPN Wideband Silicon RF Transistor: BFU630F
    NXP offers a complete portfolio of SiGe:C wideband transistors for maximum performance and design flexibility, and the BFU630F product is a good example of it. This BFU630F wideband transistor delivers extremely low noise and high maximum gain, making it ideal for sensitive RF receivers in high-performance applications such as next-generation cell phones. At the same time, the high operating frequencies are ideal for use in microwave applications in the 10 to 30 GHz range, such as satellite TV receivers and automotive collision avoidance radar. NXP’s innovative silicon-germanium-carbon (SiGe:C) BiCMOS processes enable this outstanding performance, combining the performance of gallium-arsenide (GaAs) technologies with the reliability of silicon-based processes.
  9. GaN Technology For Wireless Base Stations

    The new MAGb series from MACOM is a family of the industry’s first commercial base station-optimized GaN transistors designed to achieve excellent efficiency, bandwidth, and power gain. It is also the broadest portfolio available of RF to light solutions for wireless network infrastructures.

  10. 0405-500L: UHF Transistor For Long Pulsed Radar Applications
    The 0405-500L is an internally-matched, common emitter transistor capable of providing 500 Watts of pulsed RF output power in a push-pull configuration at one thousand and one hundred microsecond pulse width twenty–six percent duty factor across the frequency band 400 to 450 MHz