transistors-products

81. GaN Technology For Wireless Base Stations 10/20/2017

    The new MAGb series from MACOM is a family of the industry’s first commercial base station-optimized GaN transistors designed to achieve excellent efficiency, bandwidth, and power gain. It is also the broadest portfolio available of RF to light solutions for wireless network infrastructures.

82. 3400 – 3600 MHz Thermally-Enhanced High-Power RF GaN On SiC HEMT: GTRA364002FC 9/17/2018

    Wolfspeed’s new GTRA364002FC is a thermally-enhanced high-power RF GaN on SiC HEMT designed for multi-standard cellular power amplifier and other wireless infrastructure applications in the 3400 – 3600 MHz frequency range. The device features an output power of 400 W, 13 dB gain, and operation at 48 V.

83. 125-167 MHz 650W VHF Band Transistor 7/7/2005
    The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 MHz...
84. High Power 1214-370M Transistor 9/26/2005
    This transistor provides RF pulsed Peak Power of 370 Watts at 330 us, 10%.
85. 50-Ohm GaN RF Input-Matched Transistor: QPD1000 12/13/2016

    Qorvo offers a wideband, 28 V, 50-Ohm input-matched RF transistor that is ideal for commercial and defense communications applications. This device has an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

86. 0405-500L: UHF Transistor For Long Pulsed Radar Applications 12/3/2007
    The 0405-500L is an internally-matched, common emitter transistor capable of providing 500 Watts of pulsed RF output power in a push-pull configuration at one thousand and one hundred microsecond pulse width twenty–six percent duty factor across the frequency band 400 to 450 MHz
87. RF Power Transistor Series 8/18/2000
    The PD5xxxx series of radio-frequency (RF) power transistors is aimed at wireless base station and mobile radio applications where high volume...
88. GaN MMIC Amplifiers/Transistors 10/31/2012

    Northrop Grumman’s first three entries in their GaN MMIC Amplifiers have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market.