transistors-products
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S-Band Transistors
2/15/2007
Integra’s lineup of S-band silicon bipolar power transistors boasts performance unmatched by any other vendor. These transistors are designed to address the most stringent requirements for civilian and military radar, including ground, naval, and airborne mechanically and electronically scanned antennas
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L-Band Transistors
2/15/2007
Integra’s lineup of L-band silicon bipolar transistors boasts industry leading performance. These common base devices offer the highest pulsed RF power, highest gain and smallest footprint available
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GaN on Sic HEMT Transistor
1/25/2013
These 35W GaN SiC RF Power Transistors are ideal for commercial and military radar, professional and military radio communications systems, jammers, wideband or narrowband filters, and test instrumentation. They cover the DC to 3.5 GHz frequency range and are available in a bolt down flanged package and in a solder down earless package.
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High L-Band Series Transistors
1/30/2006
The High L-Band series transistors from Advanced Power Technology consists of three model types: 1517-20M, 1517-110M, and 1517-250M which cover the frequency for High L-Band Radar Applications from 1480 to 1650 MHz with a pulsed output power of 20W, 110W, and 250W respectively...
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Broadband General Purpose GaN Transistor: IGN0160UM10
5/19/2016
Integra Technologies offers the IGN0160UM10 broadband GaN transistor for use in general purpose applications. The transistor operates throughout the 0.100 through 6.00 GHz frequency range, and is designed to utilize GaN on SiC HEMT technology.
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RF Transistor
7/16/1999
Model PTF 10100 is a 900-MHz transistor optimized for amplification of cellular base station signals
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30 W, DC - 6.0 GHz, GaN HEMT: CGHV27030S
6/16/2017
Wolfspeed, A Cree Company, offers the new CGHV27030S unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) with operation in the 700 - 960 MHz, 1200 - 1400 MHz, 1800 - 2200 MHz, and 3300 - 3700 MHz frequency ranges at both 50 V and 28 V. With features like high efficiency, high gain, and wide bandwidth capabilities, this transistor is ideal for telecommunications applications, as well as tactical communications applications from 20 - 2500 MHz.
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DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010
4/28/2016
The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.