transistors-products

81. S-Band Transistors 2/15/2007
    Integra’s lineup of S-band silicon bipolar power transistors boasts performance unmatched by any other vendor. These transistors are designed to address the most stringent requirements for civilian and military radar, including ground, naval, and airborne mechanically and electronically scanned antennas
82. High L-Band Series Transistors 1/30/2006
    The High L-Band series transistors from Advanced Power Technology consists of three model types: 1517-20M, 1517-110M, and 1517-250M which cover the frequency for High L-Band Radar Applications from 1480 to 1650 MHz with a pulsed output power of 20W, 110W, and 250W respectively...
83. 10500 Avionics Transistor 8/12/2005
    APT RF’s Avionics Transistor, 500W, Class C, common base power transistor is designed for Mode-S systems covering 1030-1090 MHz...
84. 1800 W, 65 V, 1.0 – 1.1 GHz Highest Power GaN Transistor On The Market: QPD1025L 6/29/2018

    Qorvo offers the 1800 W, 65 V, 1.0 – 1.1 GHz QPD1025L as the highest GaN transistor on the market. This discrete GaN on SiC HEMT has a package that features input pre-match resulting in ease of external board match and saved board space.

85. L-Band Transistors 2/15/2007
    Integra’s lineup of L-band silicon bipolar transistors boasts industry leading performance. These common base devices offer the highest pulsed RF power, highest gain and smallest footprint available
86. Rugged LDMOS RF Power Transistors for Harsh Conditions 6/29/2012

    These rugged LDMOS (laterally diffused metal oxide semiconductor) transistors operate over a wide 1 MHz to 2 GHz frequency range. They’re ideal for applications subject to harsh conditions like HF-UHF transmitters and transceivers, white space data transceivers, defense and aerospace systems, television transmitters, test equipment, and radar systems

87. GaN S-Band 50Ω Transistor: IGT2731M130 4/11/2018

    Integra Technologies introduces IGT2731M130 transistor with GaN on SiC HEMT technology, and exhibits 16 dB typical gain and 50% drain efficiency. It is ideal for applications operating in the 2.7-3.1 GHz frequency range. This depletion mode device is 100% high power RF tested in a 50Ω RF test fixture.

88. 400 W LDMOS Transistor For S-band Radar: BLS9G2731L-400U 8/6/2019

    RFMW introduces the BLS9G2731L-400U from Ampleon as a 400 W LDMOS power transistor ideally designed for use in S-band applications in the 2700 MHz to 31 MHz frequency range. With 400 W pulsed power capability in class-AB circuits, the transistor offers 47% efficiency with up to 13 dB of gain.