Product/Service

L-Band Transistors

Source: Integra Technologies, Inc.
Integra's lineup of L-band silicon bipolar transistors boasts industry leading performance. These common base devices offer the highest pulsed RF power, highest gain and smallest footprint available

Integra's lineup of L-band silicon bipolar transistors boasts industry leading performance.

These common base devices offer the highest pulsed RF power, highest gain and smallest footprint available.

All of Integra's L-band silicon bipolar transistors feature an all gold metal system for unmatched reliability and maximum performance.

CLICK ON THE TRANSISTOR P/N ( PART NUMBER ) FOR A TRANSISTOR DATA SHEET 

L-Band Radar
Pout
(W)
Typ.
Pin
(W)
Gain
(dB)
Typ.
Min
IRL
(dB)
VCC

(V)
Eff
(%)
Typ.
P/N
870-990 MHz
300us, 15%		 13.7 2.4
7.6
10
36
53
IB0810M12
53 8.3
8.1
10
36
52
IB0810M50
108 10
10.3
10
36
69
IB0810M100
222 34
8.1
10
36
59
IB0810M210
1.2-1.4 GHz
100us, 10%		 6.3 0.8
9.0
10
28
47
IB1214M6
46 4
10.6
10
40
54
IB1214M32
63 8.7
8.6
10
40
47
IB1214M55
176 27.3
8.1
10
40
50
IB1214M150
333 60
7.4
10
40
54
IB1214M300
1.2-1.4 GHz
300us,10%		 152 20

8.81
8.15

50

53.8

 IB1214M130
409 60

8.33
8
50
52.7
IB1214M370
375 49.66

8.78
8
42
59.9
IB1214M375
1.45-1.55 GHz
100us burst, 1%		 650 96.5
8.28
8
50
46
IB1416S650

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