Product/Service

Rugged LDMOS RF Power Transistors for Harsh Conditions

Source: Richardson RFPD

Rugged LDMOS RF Power Transistors for Harsh Conditions

These rugged LDMOS (laterally diffused metal oxide semiconductor) transistors operate over a wide 1 MHz to 2 GHz frequency range. They’re ideal for applications subject to harsh conditions like HF-UHF transmitters and transceivers, white space data transceivers, defense and aerospace systems, television transmitters, test equipment, and radar systems

MRFE6VS25NR1 LDMOS RF Power Transistor Features:

  • Frequency range: 1.8 to 2000 MHz
  • Gain: 25.4 dB
  • Pout: 25 W
  • Power added efficiency: 74.5%
  • Supply voltage: 50 VDC
  • Thermal resistance: 1.2 ºC/W
  • Package type: TO-270-2

MRFE6VP100HR5 LDMOS RF Power Transistor Features:

  • Frequency range: 1.8 to 2000 MHz
  • Gain: 26 dB
  • Pout: 100 W
  • Power added efficiency: 70%
  • Supply voltage: 50 VDC
  • Thermal resistance: 0.38 ºC/W
  • Package type: NI-780-4
  • Also available in gull wing MRFE6VP100HSR5