Datasheet | June 29, 2012

LDMOS RF Power Transistor: MRFE6VS25NR1 Datasheet

Source: Richardson RFPD

This rugged LDMOS RF Power Transistor operates in the 1.8 to 2000 MHz frequency range and features 25.4 dB gain, 25 W Pout, 74.5% power added efficiency, and more. It’s ideal for applications subject to harsh conditions. 

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