1011LD300 LDMOS Avionics Transistor
APT RF’s LDMOS Avionics Transistor, 300W, Class AB, common source LDMOS power transistor is designed for Transponder/Interrogator systems covering 1030-1090 MHz...
RF Power Transistor
The PTF 10149 RF power transistor is intended for use in applications in the 920-960 MHz band
100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures
Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.
960-1215 MHz 500W Avionics TACAN Transistor
The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing conditions and Vcc=50V, this common base device supplies a minimum of 500 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All transistors are 100% screened for large signal RF parameters.
DME800 Avionics Transistor
APT-RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for broadband DME systems covering 1025-1150 MHz...
HF28-Series Bipolar Power Transistors
Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 28 volt products offer drop-in equivalence to other manufacturers.