GaN RF Power Transistor: T1G6003028-FS
This GaN RF Power Transistor operates in the DC-6 GHz frequency range. It’s ideal for applications involving jammers, military and civilian radar, test instrumentation, professional and military radio communications, and wideband or narrowband amplifiers.
3400 – 3600 MHz Thermally-Enhanced High-Power RF GaN On SiC HEMT: GTRA364002FC
Wolfspeed’s new GTRA364002FC is a thermally-enhanced high-power RF GaN on SiC HEMT designed for multi-standard cellular power amplifier and other wireless infrastructure applications in the 3400 – 3600 MHz frequency range. The device features an output power of 400 W, 13 dB gain, and operation at 48 V.
1011LD300 LDMOS Avionics Transistor
APT RF’s LDMOS Avionics Transistor, 300W, Class AB, common source LDMOS power transistor is designed for Transponder/Interrogator systems covering 1030-1090 MHz...
Integra’s lineup of VHF - VDMOS silicon MOSFET power transistors boasts performance unmatched by any other vendor.
These common source power transistor devices offer the highest pulsed RF power and smallest circuit footprint available in any VHF - VDMOS silicon MOSFET high power transistors.
HF28-Series Bipolar Power Transistors
Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 28 volt products offer drop-in equivalence to other manufacturers.
450MHz 500W UHF Radar Transistor
The high power pulsed radar transistor device part number IB450S500
is designed for UHF radar systems operating at 450 MHz. While
operating in class C mode this common base device supplies a
minimum of 500 watts of peak pulse power under the conditions of
30us pulse width and 10% duty cycle. All devices are 100% screened
for large signal RF parameters...
2731-100M Bipolar/LDMOS Transistor
The 2731-100M is a high performance, common base, class C output stage offering 100W of peak power, 40% collector efficiency, excellent 8.0 dB power gain flatness, and a hermetically-sealed high reliability package for Air Traffic Control and Military Radar applications...
GaN S-Band 50Ω Transistor: IGT2731L120
Integra Technologies introduces IGT2731L120 with GaN on SiC HEMT technology, exhibiting 13 dB typical gain, and 50% drain efficiency. This device is 100% high power RF tested in a 50Ω RF test fixture.
ntegra’s lineup of UHF silicon bipolar and MOSFET high power transistors boasts industry leading performance. These common source and common base power devices offer the highest pulsed RF power and smallest circuit footprint available in any UHF silicon bipolar and MOSFET high power transistor
0405-500L: UHF Transistor For Long Pulsed Radar Applications
The 0405-500L is an internally-matched, common emitter transistor
capable of providing 500 Watts of pulsed RF output power in a push-pull
configuration at one thousand and one hundred microsecond pulse width
twenty–six percent duty factor across the frequency band 400 to 450 MHz