1. GaN Wideband Transistor: MAGX-011086

    The MAGX-011086 is a wideband transistor optimized for operations in DC - 6 GHz. This GaN HEMT is made with operating output power levels of 4W (36 dBm) in an industry standard, low inductance, and a surface mount QFN package.

  2. NPN Wideband Silicon RF Transistor: BFU630F
    NXP offers a complete portfolio of SiGe:C wideband transistors for maximum performance and design flexibility, and the BFU630F product is a good example of it. This BFU630F wideband transistor delivers extremely low noise and high maximum gain, making it ideal for sensitive RF receivers in high-performance applications such as next-generation cell phones. At the same time, the high operating frequencies are ideal for use in microwave applications in the 10 to 30 GHz range, such as satellite TV receivers and automotive collision avoidance radar. NXP’s innovative silicon-germanium-carbon (SiGe:C) BiCMOS processes enable this outstanding performance, combining the performance of gallium-arsenide (GaAs) technologies with the reliability of silicon-based processes.
  3. Broadband General Purpose GaN Transistor: IGN0160UM10

    Integra Technologies offers the IGN0160UM10 broadband GaN transistor for use in general purpose applications. The transistor operates throughout the 0.100 through 6.00 GHz frequency range, and is designed to utilize GaN on SiC HEMT technology.

  4. RF Power Transistor Series
    The PD5xxxx series of radio-frequency (RF) power transistors is aimed at wireless base station and mobile radio applications where high volume...
  5. 380 W, 1210-1400 MHz GaN/SiC Transistor: IGN1214M380C

    Integra Technologies introduces the IGN1214M380C GaN/SiC transistor, exhibiting 20 dB gain, 54% efficiency at 150 us-10% pulse conditions, and operation in the 1210-1400 MHz frequency range. These devices are 100% tested for large signal parameters.

  6. GaN S-Band 50Ω Transistor: IGT2731L120

    Integra Technologies introduces IGT2731L120 with GaN on SiC HEMT technology, exhibiting 13 dB typical gain, and 50% drain efficiency. This device is 100% high power RF tested in a 50Ω RF test fixture.

  7. Insulated-gate Bipolar Transistors (IGBTS)

    Richardson RFPD’s Insulated-gate Bipolar Transistors (IGBTS) use Microsemi’s leading-edge Power MOS 8™ technology and offer a dramatic reduction of twenty percent or more, in total switching and conduction losses as compared to competitive solutions.