C-Band GaN 4.2 kW Pulsed Solid State Power Amplifier Module: VSC3645
CPI’s Beverly Microwave Division presents the VSC3645 GaN 4.2 kW pulsed solid state power amplifier module operating in the C-band (5.2 – 5.9 GHz). This high efficiency, high power, compact amplifier is highly efficient, easy to maintain, and is designed to easily create high power C-band radar transmitters.
960-1215 MHz 500W Avionics TACAN Transistor
The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing conditions and Vcc=50V, this common base device supplies a minimum of 500 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All transistors are 100% screened for large signal RF parameters.
50-Ohm GaN RF Input-Matched Transistor: QPD1000
Qorvo offers a wideband, 28 V, 50-Ohm input-matched RF transistor that is ideal for commercial and defense communications applications. This device has an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.
450MHz 500W UHF Radar Transistor
The high power pulsed radar transistor device part number IB450S500
is designed for UHF radar systems operating at 450 MHz. While
operating in class C mode this common base device supplies a
minimum of 500 watts of peak pulse power under the conditions of
30us pulse width and 10% duty cycle. All devices are 100% screened
for large signal RF parameters...
TAN350 Avionics Transistor
APT-RF’s Avionics Transistor, 350W, Class C, common base power transistor is designed for broadband TACAN systems covering 960-1215 MHz with 10uS, 10% pulsing at Vcc = 50V
1,500 Watt RF Power Transistor For UHF Pulsed Radar
Microsemi Corporation recently introduced the new 1,500 watt RF power transistor for UHF pulsed radar applications, thus expanding its industry-leading portfolio of high power silicon carbide transistors.
2731-100M Bipolar/LDMOS Transistor
The 2731-100M is a high performance, common base, class C output stage offering 100W of peak power, 40% collector efficiency, excellent 8.0 dB power gain flatness, and a hermetically-sealed high reliability package for Air Traffic Control and Military Radar applications...
UHF-Band RF Power MOSFET Transistor
This high power transistor part number IDM500CW200 is designed for
VHF/UHF-Band systems operating at 1 to 500 MHz. Operating at CW
conditions, this dual MOSFET device supplies a minimum of 200
watts of power across the instantaneous operating bandwidth of 1 to 500