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NPN Wideband Silicon RF Transistor: BFU630F

Source: NXP Semiconductors

BFU630F
NXP offers a complete portfolio of SiGe:C wideband transistors for maximum performance and design flexibility, and the BFU630F product is a good example of it. This BFU630F wideband transistor delivers extremely low noise and high maximum gain, making it ideal for sensitive RF receivers in high-performance applications such as next-generation cell phones. At the same time, the high operating frequencies are ideal for use in microwave applications in the 10 to 30 GHz range, such as satellite TV receivers and automotive collision avoidance radar. NXP's innovative silicon-germanium-carbon (SiGe:C) BiCMOS processes enable this outstanding performance, combining the performance of gallium-arsenide (GaAs) technologies with the reliability of silicon-based processes.

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Datasheet: NPN Wideband Silicon RF Transistor: BFU630F

The NPN Wideband Silicon RF Transistor: BFU630F features the following:

  • 40 GHz fT silicon technology
  • High maximum stable gain 26 dB at 1.8 GHz
  • Low noise high gain microwave transistor
  • Noise figure (NF) = 0.85 dB at 2.4 GHz

The NPN Wideband Silicon RF Transistor: BFU630F can be used in the following applications:

  • AMR
  • Analog/digital cordless applications
  • Bluetooth
  • FM radio
  • GPS
  • Ku band oscillators DRO's
  • LNB
  • Low noise amplifiers for microwave communications systems
  • LTE, cellular, UMTS
  • Mobile TV
  • RKE
  • WLAN and CDMA applications
  • ZigBee

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Datasheet: NPN Wideband Silicon RF Transistor: BFU630F