Microsemi Corporation recently announced its first two RF power transistors utilizing silicon carbide technology for high power VHF and UHF band pulsed radar applications.
Designated 0150SC-1250M and 0405SC-1000M, these RF Power transistors utilize state-of-the-art silicon carbide technology designed for VHF - 150 to 160 MHz, and UHF - 406 to 450 MHz respectively. These high performance, common gate, class AB, high power transistors offer the industry's highest power output, typical 1400W at VHF and 1100W at UHF of peak power in compact single-ended packages.
Typical silicon-based RF power transistor solutions offered throughout the industry, such as BJT or LDMOS devices, must use complex push-pull designs to achieve similar power levels. Microsemi's new silicon carbide devices also are built with 100% gold metallization and gold wires in hermetically sealed packages for the highest reliability in weather and long range radar applications.
As new system designs demand substantial performance increases beyond silicon capability, silicon carbide is the "Next Generation" technology. Microsemi will continue to develop and bring to market High Power SiC transistors for applications from HF thru S-Band.
System Benefits using Microsemi silicon carbide RF power transistors:
Microsemi's new silicon carbide products utilize new chip design and processing enhancements to offer state-of-the-art performance, notably in high power, small transistor and circuit size over the specified frequency range with 300 us pulse width and 10% duty cycle.