Products and Services

  1. Broadband Low-Noise Amplifier: SKY67159-396LF

    The SKY67159-396LF is an ultra-broadband low-noise amplifier designed for FDD and TDD 2G/3G/4G LTE small-cell base stations. With features such as superior gain flatness, exceptional linearity, and an internal active bias circuitry, this LNA offers the ability to externally adjust supply current and provide stable performance over temperature and process variation.

  2. High Intercept Low Noise GPS Amplifier: HILNA™ GPS: 1.2 to 1.6 GHz, 32 dB Gain

    The HILNA™ GPS is a high intercept, low noise amplifier that features reverse voltage protection, a wide operational voltage range, extremely low noise and high gain, a wide dynamic range, an internal regulator/active bias, high reliability, a rugged, fully characterized assembly, multi-octave frequency coverage, and more.

  3. 6-11 GHz Low Noise Amplifier: CMD186P3

    The CMD186P3 is a broadband MMIC low noise amplifier housed in a leadless 3x3 mm plastic surface mount package. The CMD186P3 is ideally suited for EW and communications systems where small size and low power consumption are needed.

  4. SiGe: C Low Noise Amplifiers (LNAs)
    NXP Semiconductors has released new low noise amplifiers with the ability to dynamically suppress strong transmit signals. These LNAs improve GPS signal reception, linearity, and noise figure.
  5. Low-Noise Amplifiers For S-Band Applications
    These Low Noise Amplifiers are built with GaAs p-HEMT die attached on a ceramic thick film substrate. Alumina, the most commonly used type of ceramic, is what RHIC has chosen due to its relatively high thermal conductivity. These Low Noise Amplifiers are focused on giving the lowest noise possible; exhibiting low noise performance of better than 1dB noise figure. The devices work at input levels as high as 20dBm thanks to the initial gate length of 1200µm design.
  6. Low Noise, Low Current Amplifier: SKY67015-396LF

    This low noise amplifier (LNA) covers the 0.03 to 0.3 GHz frequency range and features low NF (0.8 dB @150 MHz), 18.5 dB @150MHz gain, a flexible supply voltage from 1.8 to 5.0V, improved NF and linearity, and an adjustable supply current for higher IIP3.

  7. Active Bias, Low-Noise Second Stage Amplifiers: SKY6702X-396LF

    SKY6702X-396LF GaAs, pHEMT low-noise, second stage amplifiers (LNAs) are designed to operate throughout the 0.6 to 3.0 GHz frequency range. These amplifiers feature an internal bias circuitry to provide stable performance over temperature and process variation. The GaAs pHEMT enhancement mode process provides good return loss, low noise, and high linearity performance.

  8. Switches and Switch + LNA Modules

    Qorvo offers a series of single pole triple throw (SP3T) SOI switches and switches + LNA modules for automotive WiFi, automotive data and diagnostics, infotainment, key fob, IEEE802.11b/g/n/ac WiFi, and 2.5 GHz ISM band applications. Four models are available; two of them are WiFi switches, and two of them are WiFi switches with a low noise amplifier (LNA) in a front end module (FEM). With an ultra-small form factor and integrated matching, the number of external components and layout area in the customer applications, as well as the bill of materials, system footprint, and manufacturing cost are greatly reduced.

  9. 2-18 GHz Low Noise Amplifier

    This low noise amplifier (LNA) features internal voltage regulation, unconditional stability, and an integrated bias-tee on the output port. It covers the 2-18 GHz frequency range and provides 30dB of gain while maintaining +2.0dB maximum gain flatness over the operating frequency. The amplifier requires +12 to +15VDC, and its current draw is less than 350mA.

  10. LNA Front-End Module: SKY65709-81

    This low noise amplifier (LNA) front-end module includes a BDS/GPS/GNSS pre-filter and ideal for Galileo receiver applications, smartphones, and tablets. It features a small signal gain, a low noise figure, low current consumption, a single 1.8 to 3.6 V single DC supply, and input/output impedance internally matched to 50Ω.