Downloads

  1. MPXM Multicoax Testing Solutions Datasheet
    12/4/2018

    The MXPM multicoax solution supports measurements up to 70 GHz (with an option to 80 GHz).  The MXPM unit guarantees satisfactory performance and affordability with its high density pitch (2.54 mm, 0.1 inch) and a user friendly magnet mount connection.

  2. An Overview Of The PXI Platform
    12/4/2018

    The PXI is a PC-based platform designed for measurement and automation systems. The software powered platform combines PCI electrical-bus features with the modular, Eurocard packaging of CompactPCI and then adds specialized synchronization buses and key software features. 

  3. 5200 - 5900 MHz GaN MMIC For Radar Power Amplifiers: CMPA5259050F Datasheet
    12/3/2018

    The CMPA5259050F gallium nitride (GaN) high electron mobility transistor (HEMT) from Cree is designed to provide high efficiency, high gain, and wide bandwidth capabilities in applications operating in the 5.2 – 5.9 GHz frequency range. Supplied in a ceramic/metal flange package, the amplifier also operates at 50 Watts and 28 volts.

  4. 5200 - 5900 MHz GaN MMIC For Radar Power Amplifiers: CMPA5259050F
    12/3/2018

    The CMPA5259050F gallium nitride (GaN) high electron mobility transistor (HEMT) from Cree is designed to provide high efficiency, high gain, and wide bandwidth capabilities in applications operating in the 5.2 – 5.9 GHz frequency range. Supplied in a ceramic/metal flange package, the amplifier also operates at 50 Watts and 28 volts.

  5. Thermal Analysis And Its Application To High Power GaN HEMT Amplifiers
    12/3/2018

    A systematic and consistent approach to the thermal modeling and measurement of GaN on SiC HEMT power transistors is described. Since the power density of such multilayered wide bandgap structures and assemblies can be very high compared with other transistor technologies, the application of such an approach to the prediction of operating channel temperatures (and hence product lifetime) is important. This white paper discusses how to determine the maximum channel temperature under specific operating modes, particularly for products operating under CW conditions and dissipating large amounts of thermal energy.

  6. Reliability Of GaN/AlGaN HEMT MMIC Technology On 100-mm 4H-SiC
    12/3/2018

    This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates. 

  7. A Review Of GaN On SiC High Electron-Mobility Power Transistors And MMICs
    12/3/2018

    This paper summarizes the unique advantages of Gallium–nitride power transistors (GaN HEMTs) compared to other power transistor technologies, with examples of where such features have been exploited.

  8. Protecting Against Radiation Hazards In RF Transmitter Design: A Simulation-Driven Approach
    12/3/2018

    Protection against the dangers of excessively high levels of radiation is an important part of any system design process that involves radio frequency (RF) transmitters. Radiation hazards have to be within standardized limits for many different hazard applications, like human safety (HERP), fuel (HERF) and ordnance (HERO). EM simulation is vital for the identification of field levels for individual frequency components of antennas that operate in complex environments. This webinar presentation will demonstrate how Altair Feko has been applied to solve a wide range of EMC problems including radiation analysis and radiation hazard (RADHAZ) zone analysis.

  9. ODU Advanced Connector Solutions Brochure
    12/3/2018

    ODU Group offers a number of advanced connector solutions for medical, military, security, test and measurements, industrial, energy, and emobility markets. These technologies include design and development, machine tool and special machine construction, injection, stamping, turning, surface technology, assembly and cable assembly.

  10. Epsilometer Solution For Measuring Dielectric Properties Datasheet
    12/3/2018

    The Epsilometer solution for measuring the dielectric properties of substrate materials from 3 MHz up to 6 GHz and can accommodate sheet specimens from 0.3 to 3 mm thick. A database in the software for the device is used to invert properties and is populated up to a permittivity of 25. Material specimens are inserted into the device and scanned to obtain their microwave response versus frequency.