current-probes-products

  1. Solid-State, Class A Amplifier: 750S1G6C 9/14/2021

    The Model 750S1G6C is a solid-state, Class A design, self-contained, air-cooled, broadband power amplifier designed for applications where instantaneous bandwidth, high gain, and linearity are required. 

  2. GaAs/GaN Power Doubler Hybrid Amplifiers 9/28/2015

    The RFPD3210 and the RFPD3220 are new Hybrid Power Doubler Amplifier modules from Qorvo operating within the 45 to 1218 MHz frequency range. Features include excellent linearity, high return loss performance, extremely low distortion, and low noise.

  3. 2.4 GHz Wi-Fi 6 Front End Module: QPF4211 3/7/2023

    The Qorvo® QPF4211 is an integrated medium power front end module (FEM) designed for Wi-Fi 6 (802.11ax) systems. The small form factor and integrated matching minimizes layout area in the application.

  4. 13.75 - 14.5 GHz 40 Watt GaN Power Amplifier: QPA1314 10/10/2024

    QPA1314 is a high-power GaN MMIC amplifier for Satcom applications. The amplifier is packaged for easy integration and is ideal for both commercial and military markets.

  5. TDS-536 - TV Dipole Set -- UHF / VHF 11/13/2008

    The A.H. Systems T.V. Dipole Set provides an accurate standard for precise FM, VHF, and UHF testing. Each Dipole Set is manufactured per the FCC balun design and is individually calibrated. All sets come contained in a rugged, lightweight storage case which includes 2 baluns, elements, cables, a tape measure and one clamp for tripod mounting.

  6. IMS Resource Center 4/28/2015

    RF Globalnet's IMS resource center is comprised of the latest products, news, articles, and video coverage from this and past year's shows. Click here to access it.

  7. Microwave / mmWave Gap Capacitor: XG Series 6/10/2024

    The XG Series low-profile gap capacitor features low insertion loss and ultra high self resonance frequencies for applications including DC blocking, RF Bypass, impedance matching, filtering, tuning and coupling.

  8. DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010 4/28/2016

    The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

  9. 150-450 MHz, 12000 Watt High Power RF Amplifier Systems: SKU 2210 10/31/2024

    Achieve exceptional performance and reliability with this high-power solid-state amplifier system, delivering a minimum of 12kW peak pulse power for demanding applications.

  10. 50 - 6000 MHz, 25 dBm+ Low Noise Amplifier: LNA1009 12/18/2023

    The LNA1009 Low-Noise Amplifier operates within the frequency range of 50-6000MHz with a minimum gain of 25dB and low harmonics, producing more than 25dBm power.