3.3V 5GHz 802.11a/n Front-End Module: RF5516
RFMD’s RF5516 3.3V 5GHz 802.11a/n Front-End Module features a single supply voltage of 3.0V to 4.8V, an integrated 5Ghz Amplifier, an LNSA, and a SPT2T TX/RX Switch. It’s ideal for IEEE802.11a WiFi, and 5GHz ISM Band applications, and with portable battery powered equipment.
Front End Module (FEM) for ISM Band Applications: RFFM6403
This front end module is an ideal solution for applications involving wireless automatic metering, portable battery powered equipment, Smart Energy, the 400 MHz ISM band, and other areas that require a solution that complies with the need for size reduction and a reduction in the number of components outside of the core chipset.
MMA-061827: 6 To 18 GHz Power Amplifier MMIC Chip
The MMA-061827 is a 6-18 GHz GaAs power amplifier MMIC chip. Small signal gain is typically 8.0 dB across band. In a balanced configuration, input and output VSWR are better than 1.5:1 with a typical P1B more than 29 dBm, and a Psat of
30 dBm. The typical performance is shown below. MMA-061827 can be used in broadband EW and defense applications. Hi-rel and space screening are available.
APECS High Precision Thick Film Substrates
APECS means tighter tolerances & lower costs – Using the DuPont Fodel® process as a base technology, Anaren Ceramics’ precision thick film technology (better known as APECS) pushes thick film technology to a best-in-class position from which we can meet or exceed thin film tolerances -- at a far more affordable price point.
RF5725 - 3.3 V, Single-Band Front-End Module
The RF5725 is a single-chip integrated front-end module (FEM) for high performance WLAN applications in the 2.4GHz to 2.5GHz ISM band. This FEM greatly reduces the number of external components, minimizing footprint and assembly cost of the overall 802.11b/g solution. The RF5725 has an integrated b/g power amplifier, LNA, a Coupler Power detector, and TX filtering. It also is capable of switching between WLAN RX, WLAN TX, and BTH RX/TX operations. This device is manufactured using GaAs HBT and pHEMT processes on a 3mmx3mmx0.5mm 16-pin QFN package. This module meets or exceeds the RF front-end needs of 802.11b/g WLAN RF systems.
AMI/AMR Smart Energy Tx/Rx Front End Modules: RF65x9 Series
RFMD’s AMI/AMR Smart Energy Tx/Rx Front End Modules consists of three separate models ideal for wireless automatic metering, single chip RF front end module, portable battery powered equipment, and 868MHz/900MHz ISM band applications.
802.11ac Switch/LNA Front End Module: SKY85608-11
This front end module (FEM) combines a SP2T switch and an LNA with a bypass mode in an 8-pin, 1.5 x 1.5mm DFN package. It’s ideal for applications involving WiFi-enabled headsets, tablets, and mobile systems, for SiP modules for embedded systems, and in 802.11n/ac smartphones and tablets.
2.0V to 3.6V 2.4GHz Front End Module: RF6555
RFMD's RF6555 is a Front End Module (FEM) with a TX Output Power of 18 dBm, and a TX Gain of 25dB. It's ideal for WLAN and ZigBee® applications in the 2.4GHz to 2.5GHz band. In addition to its internal integrated LNA bypass mode, this FEM also integrates the PA plus harmonic filter in the transmit path. The RF6555 Front End Module provides a single balanced TDD access for RX and TX paths along with two ports on the output for connecting a diversity solution or a test port.
E-pHEMT MMIC For Optical Networks
Optical Networks are one of the key infrastructures for the broadcasting and telecommunication industry. FTTH, fiber to the home, is the basis for the optical cable installation as well. RF MMIC devices are used in many of the applications for converting optical signals to RF signals and vice versa. CATV broadcasting, satellite broadcasting, high speed internet, IPTV(Internet Protocol Television), VOD(Video on Demand) and other telecommunication applications can be converged through optical networks and is now expanding its market in various territories.
90W GaN Power Module
M/A COM’s MAMG-001214-090PSM is an L-band 90 W surface mount GaN power module ideal for pulsed radar applications. It features a very compact size (14 x 24 mm2), GaN on SiC D-mode transistor technology, up to 3 ms pulse width and 10% duty cycle, and more.