MMA-022020B Broadband MMIC Power Amplifier
The MMA-022020B is a 2 - 20GHz broadband MMIC medium power amplifier with 22.5 dBm output power. It is realized in
advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip
input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF
connections for broad range applications
XP1019-BD - 17.0 To 24.0 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s three stage 17.0 to 24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +27.0 dBm P1dB output compression point
across much of the band. The device also includes an on-chip temperature compensated output power detector.
Thin-Film Directional Couplers (CP0603A1747MLTR\500)
The ITF LGA Coupler is based on thin-film multilayer technology.
The technology provides a miniature part with excellent high frequency
performance and rugged construction for reliable automatic assembly.
The ITF Coupler is offered in a variety of frequency bands compatible
with various types of high frequency wireless systems.
CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier
Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band.
This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability
Custom Thin Film Metalized Substrates
Johanson Technology offers a wide range of dielectrics for use in application specific environments. These materials are available in both lapped and "as fired" condition as well as metalized and non-metalized substrates...
XP1009 17 To 21 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s two stage 17.0-21.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +38.0 dBm
GaAs MMIC I/Q Mixers
These GaAs MMIC I/Q Mixers are ideal for applications involving point-to-point radio, point-to-multi-point radio, sensors, military radar, satellite communications, EW, and ELINT. Two different models are available in this series with frequency range coverage of 24-28 GHz, and 8-12 GHz.
High Power PIN Diodes: BRO399-11A
Skyworks’ SMP1324-087LF, SMP1371-087LF and SMP1302-085LF PIN diodes are designed for use in high-power-handling switches from 1–900 MHz. SMP1324-087LF and SMP1371-087LF are optimized for use as series diodes. SMP1302-085LF is optimized for use as a shunt diode. Due to their thermally-enhanced package designs, these diodes have very low thermal resistance which enables them to handle very large input power.
MMA-022025B Broadband MMIC Power Amplifier
The MMA-022025B is a 2 - 20GHz broadband MMIC amplifier with typical 27dBm output power at 1 dB compression point. The
MMIC chip is realized in advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1
– 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias
circuits and RF connections for broad range applications
MMIC Wideband Amplifier (BGM1014 T/R)
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.