semiconductors-ics-products

  1. MMA-022020B Broadband MMIC Power Amplifier
    4/19/2007
    The MMA-022020B is a 2 - 20GHz broadband MMIC medium power amplifier with 22.5 dBm output power. It is realized in advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF connections for broad range applications
  2. XP1019-BD - 17.0 To 24.0 GHz GaAs MMIC Power Amplifier
    5/11/2007
    Mimix Broadband’s three stage 17.0 to 24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +27.0 dBm P1dB output compression point across much of the band. The device also includes an on-chip temperature compensated output power detector.
  3. Thin-Film Directional Couplers (CP0603A1747MLTR\500)
    1/21/2009
    The ITF LGA Coupler is based on thin-film multilayer technology. The technology provides a miniature part with excellent high frequency performance and rugged construction for reliable automatic assembly. The ITF Coupler is offered in a variety of frequency bands compatible with various types of high frequency wireless systems.
  4. CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier
    6/7/2007
    Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity
  5. Custom Thin Film Metalized Substrates
    12/4/2001
    Johanson Technology offers a wide range of dielectrics for use in application specific environments. These materials are available in both lapped and "as fired" condition as well as metalized and non-metalized substrates...
  6. XP1009 17 To 21 GHz GaAs MMIC Power Amplifier
    6/7/2005
    Mimix Broadband’s two stage 17.0-21.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.0 dBm
  7. GaAs MMIC I/Q Mixers
    4/6/2013

    These GaAs MMIC I/Q Mixers are ideal for applications involving point-to-point radio, point-to-multi-point radio, sensors, military radar, satellite communications, EW, and ELINT. Two different models are available in this series with frequency range coverage of 24-28 GHz, and 8-12 GHz.

  8. High Power PIN Diodes: BRO399-11A
    7/28/2011
    Skyworks’ SMP1324-087LF, SMP1371-087LF and SMP1302-085LF PIN diodes are designed for use in high-power-handling switches from 1–900 MHz. SMP1324-087LF and SMP1371-087LF are optimized for use as series diodes. SMP1302-085LF is optimized for use as a shunt diode. Due to their thermally-enhanced package designs, these diodes have very low thermal resistance which enables them to handle very large input power.
  9. MMA-022025B Broadband MMIC Power Amplifier
    4/19/2007
    The MMA-022025B is a 2 - 20GHz broadband MMIC amplifier with typical 27dBm output power at 1 dB compression point. The MMIC chip is realized in advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF connections for broad range applications
  10. MMIC Wideband Amplifier (BGM1014 T/R)
    1/21/2009
    Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.